HA-5222/883 Dual, Low Noise, Wideband, Precision Operational Amplifier January 1996 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5222/883 is a dual, high performance, dielectrically isolated, monolithic op amp, featuring precision DC characteristics while providing excellent AC characteristics. Designed for audio, video, and other demanding applications, noise (3.3nV/√Hz at 1kHz typ), total harmonic distortion (<0.005% typ), and DC errors are kept to a minimum. • Gain Bandwidth Product . . . . . . . . . . . . . 100MHz (Min) • Unity Gain Bandwidth . . . . . . . . . . . . . . . . 30MHz (Min) 40MHz (Typ) • High Slew Rate . . . . . . . . . . . . . . . . . . . . . . 25V/µs (Min) 37V/µs (Typ) • Low Offset Voltage. . . . . . . . . . . . . . . . . . 0.75mV (Max) 0.30mV (Typ) • High Open Loop Gain . . . . . . . . . . . . . . . . . 106dB (Min) 128dB (Typ) • Channel Separation (at 10kHz) . . . . . . . . . . 110dB (Typ) • Low Voltage Noise (at 1kHz) . . . . . . . . 5.9nV/√Hz (Max) 3.3nV/√Hz (Typ) • Low Current Noise (at 1kHz) . . . . . . . . 2.7pA/√Hz (Max) 1.3pA/√Hz (Typ) • High Output Current . . . . . . . . . . . . . . . . . ±30mA (Min) ±56mA (Typ) • Low Supply Current (per Op Amp.) . . . . . . 10mA (Max) 8mA (Typ) The precision performance is shown by low offset voltage (0.3mV typ), low bias currents (40nA typ), low offset currents (15nA typ), and high open loop gain (128dB typ). The combination of these excellent DC characteristics with fast settling time (0.4µs typ) make the HA-5222/883 ideally suited for precision signal conditioning. The unique design of the HA-5222/883 gives this device outstanding AC characteristics, including high unity gain bandwidth (40MHz typ) and high slew rate (37V/µs typ), not normally associated with precision op amps. Other key specifications include high CMRR (95dB typ) and high PSRR (100dB typ). The combination of these specifications will allow the HA-5222/883 to be used in RF signal conditioning as well as video amplifiers. Ordering Information PART NUMBER Applications • Precision Test Systems HA7-5222/883 TEMPERATURE RANGE -55oC to +125oC PACKAGE 8 Lead CerDIP • Active Filtering • Small Signal Video • Accurate Signal Processing • RF Signal Conditioning Pinout HA-5222/883 (CERDIP) TOP VIEW OUT1 1 -IN1 2 +IN1 V- 3 1 + 2 + 4 8 V+ 7 OUT2 6 -IN2 5 +IN2 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 3-169 511062-883 File Number 3717.1 Spec Number Specifications HA-5222/883 Absolute Maximum Ratings Thermal Information (Typical) Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 36V Differential Input Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VPeak Output Current (Pulsed at 1ms, 10% Duty Cycle) . . . . . 100mA Continuous Output Current. . . . . . . . . . . . . . Short Circuit Protected Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance θJA θJC CerDIP Package . . . . . . . . . . . . . . . . . . . 96oC/W 16oC/W Package Power Dissipation Limit at +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.04W Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.4mW/oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . ±5V to ±15V VINCM ≤ 1/2 (V+ - V-) RL ≥ 1kΩ TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = ±15V, RLOAD = 1kΩ, VOUT = 0V, Unless Otherwise Specified. PARAMETERS Input Offset Voltage SYMBOL VIO CONDITIONS TEMPERATURE MIN MAX UNITS 1 +25oC -0.75 0.75 mV -1.5 1.5 mV -80 80 nA -200 200 nA -80 80 nA -200 200 nA -50 50 nA -150 150 nA 12 - V 12 - V - -12 V - -12 V 106 - dB 100 - dB 106 - dB 100 - dB 88 - dB 86 - dB 88 - dB 86 - dB 12.0 - V 11.5 - V - -12.0 V - -11.5 V VCM = 0V 2, 3 Input Bias Current +IB -IB Input Offset Current Common Mode Range IIO +CMR VCM = 0V, +RS = 100.1kΩ, -RS = 100Ω 1 2, 3 VCM = 0V, +RS = 100Ω, -RS = 100.1kΩ 1 2, 3 VCM = 0V, +RS = 100.1kΩ, -RS = 100.1kΩ 1 2, 3 V+ = +3V, V- = -27V 1 2, 3 -CMR V+ = +27V, V- = -3V 1 2, 3 Large Signal Voltage Gain +AVOL VOUT = 0V and +10V 4 5, 6 -AVOL VOUT = 0V and -10V 4 5, 6 Common Mode Rejection Ratio +CMRR -CMRR Output Voltage Swing +VOUT ∆VCM = +10V, V+ = +5V, V- = -25V, VOUT = -10V 1 2, 3 ∆VCM = -10V, V+ = +25V, V- = -5V, VOUT = +10V 1 2, 3 RL = 1kΩ 4 5, 6 -VOUT LIMITS GROUP A SUBGROUPS RL = 1kΩ 4 5, 6 +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC Spec Number 3-170 511062-883 Specifications HA-5222/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = ±15V, RLOAD = 1kΩ, VOUT = 0V, Unless Otherwise Specified. PARAMETERS Output Current SYMBOL CONDITIONS +IOUT VOUT = +10V, RL = 1kΩ 4 +25oC 30 - mA 5, 6 +125oC, -55oC 30 - mA 4 +25oC - -30 mA 5, 6 +125oC, -55oC - -30 mA 1 +25oC - 20 mA 2, 3 +125oC, -55oC - 22 mA 1 +25oC -20 - mA 2, 3 +125oC, -55oC -22 - mA 1 +25oC 90 - dB 2, 3 +125oC, -55oC 86 - dB 1 +25oC 90 - dB 2, 3 +125oC, -55oC 86 - dB -IOUT Quiescent Power Supply Current VOUT = -10V, RL = 1kΩ +ICC VOUT = 0V, IOUT = 0mA -ICC Power Supply Rejection Ratio LIMITS GROUP A SUBGROUPS VOUT = 0V, IOUT = 0mA +PSRR -PSRR ∆VSUP = 10V, V+ = +20V, V- = -15V, V+ = +10V, V- = -15V ∆VSUP = 10V, V+ = +15V, V- = -20V, V+ = +15V, V- = -10V TEMPERATURE MIN MAX UNITS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. See AC Specifications in Table 3. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC Device Characterized at: VSUPPLY = ±15V, RLOAD = 1kΩ, Unless Otherwise Specified. LIMITS PARAMETERS Input Noise Voltage Density Input Noise Current Density Gain Bandwidth Product Unity Gain Bandwidth Slew Rate Full Power Bandwidth SYMBOL EN IN GBWP UGBW ±SR FPBW CONDITIONS NOTES TEMPERATURE MIN MAX UNITS RS = 0Ω, fO = 10Hz 1, 5 +25oC - 16.0 nV/√Hz RS = 0Ω, fO = 100Hz 1, 5 +25oC - 6.6 nV/√Hz RS = 0Ω, fO = 1kHz 1, 5 +25oC - 5.9 nV/√Hz RS = 500kΩ, fO = 10Hz 1, 5 +25oC - 24.0 pA/√Hz RS = 500kΩ, fO = 100Hz 1, 5 +25oC - 6.6 pA/√Hz RS = 500kΩ, fO = 1kHz 1, 5 +25oC - 2.7 pA/√Hz 1 +25oC 100 - MHz -55oC to +125oC 88 - MHz +25oC 30 - MHz -55oC to +125oC 25 - MHz 1 -55oC to +125oC 25 - V/µs 1, 2 -55oC to +125oC 398 - kHz VOUT = 200mVP-P , fO = 100kHz VOUT = 200mV 1 VOUT = ±2.5V, CL = 50pF VPEAK = 10V Spec Number 3-171 511062-883 Specifications HA-5222/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTIC (Continued) Device Characterized at: VSUPPLY = ±15V, RLOAD = 1kΩ, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Minimum Closed Loop Stable Gain CLSG Rise and Fall Time tR, tF ±OS Overshoot Power Consumption PC CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1 -55oC to +125oC 1 - V/V 1, 4 +25oC - 20 ns -55oC to +125oC - 35 ns +25oC - 25 % -55oC to +125oC - 30 % -55oC to +125oC - 660 mW RL = 1kΩ, CL = 50pF VOUT = ±100mV VOUT = ±100mV 1 VOUT = 0V, IOUT = 0mA 1, 3 NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2πVPEAK). 3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.). 4. Measured between 10% and 90% points. 5. Input Noise Voltage Density and Input Noise Current Density limits are based on characterization data. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6 Group A Test Requirements 1, 2, 3, 4, 5, 6 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 3-172 511062-883 HA-5222/883 Die Characteristics DIE DIMENSIONS: 78 x 185 x 19 mils ± 1 mils 1980 x 4690 x 483µm ± 25.4µm METALLIZATION: Type: Al, 1% Cu Thickness: 16kÅ ± 2kÅ GLASSIVATION: Type: Nitride (Si3N4) over Silox (SIO2 5% Phos.) Silox Thickness: 12kÅ ± 2kÅ Nitride Thickness: 3.5kÅ ± 1.5kÅ WORST CASE CURRENT DENSITY: 4.2 x 104A/cm2 SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 128 PROCESS: Bipolar Dielectric Isolation Metallization Mask Layout HA-5222/883 OUT1 V+ -IN1 +IN1 VOUT2 -IN2 +IN2 Spec Number 3-173 511062-883 HA-5222 DESIGN INFORMATION (Continued) The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design information only. No guarantee is implied. Typical Performance Curves Unless Otherwise Specified: TA = +25oC, VSUPPLY = ±15V SUPPLY CURRENT/AMPLIFIER vs TEMPERATURE CHANNEL SEPARATION vs FREQUENCY TYPICAL PERFORMANCE CHARACTERISTICS Device Characterized at: Supply Voltage = ±15V, RL = 1kΩ, CL = 50pF, Unless Otherwise Specified PARAMETERS Input Offset Voltage CONDITIONS See Table 1 TEMPERATURE TYPICAL UNITS +25oC 0.30 mV Full 0.35 mV Average Offset Voltage Drift See Table 1 Full 0.50 µV/oC Input Bias Current See Table 1 +25oC 40 nA Full 70 nA +25oC 15 nA Full 30 nA See Table 1 +25oC 70 kΩ fO = 0.1Hz to 10Hz +25oC 0.33 µVP-P fO = 10Hz +25oC 6.4 nV/√Hz fO = 100Hz +25oC 3.7 nV/√Hz fO = 1kHz +25oC 3.3 nV/√Hz fO = 10Hz +25oC 8 pA/√Hz fO = 100Hz +25oC 2.7 pA/√Hz fO = 1kHz +25oC 1.3 pA/√Hz THD & N See Note 1 +25oC 0.005 % Large Signal Voltage Gain VOUT = 0V to ±10V +25oC 128 dB Full 120 dB Input Offset Current Differential Input Resistance Input Noise Voltage Input Noise Voltage Density Input Noise Current Density See Table 1 Spec Number 3-174 511062-883 HA-5222 DESIGN INFORMATION (Continued) The information contained in this section has been developed through characterization by Harris Semiconductor and is for use as application and design information only. No guarantee is implied. TYPICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: Supply Voltage = ±15V, RL = 1kΩ, CL = 50pF, Unless Otherwise Specified PARAMETERS CONDITIONS Common Mode Rejection Ratio ∆VCM = ±10V Unity Gain Bandwidth -3dB Gain Bandwidth Product 1kHz to 400kHz Minimum Gain Stability Output Voltage Swing RL = 333Ω RL = 1K Output Current VOUT = ±10V Output Resistance TEMPERATURE TYPICAL UNITS Full 95 dB +25oC 40 MHz +125oC 33 MHz -55oC 50 MHz +25oC 140 MHz +125oC 115 MHz -55oC 160 MHz Full 1 V/V Full 110 V +25oC 112.5 V Full 112.1 V Full 156 mA +25oC 10 V Full Power Bandwidth FPBW = SR/2πVPEAK, VPEAK = 10V +25oC 398 kHz Channel Separation fO = 10kHz +25oC 110 dB Slew Rate VOUT = ±2.5V +25oC 37 V/µs +125oC 39 V/µs -55oC 36 V/µs +25oC 16 ns +125oC 17 ns -55oC 17 ns +25oC 12 % +125oC 11 % -55oC 12 % 0.1% +25oC 0.4 µs 0.01% +25oC 1.5 µs Rise Time Overshoot Settling Time VOUT = ±100mV VOUT = ±100mV 10VSTEP, AV = -1 Power Supply Rejection Ratio ∆VS = ±10V to ±20V Full 100 dB Supply Current Quiescent, VOUT = 0V, IOUT = 0mA Full 8 mA/Op Amp Minimum Supply Voltage Functional Operation Only. Other Parameters May Vary. +25oC 15 V NOTE: 1. AVCL = 10, fO = 1kHz, VOUT = 5Vrms, RL = 600Ω, 10Hz to 100kHz, Minimum resolution of test equipment is 0.005%. Spec Number 3-175 511062-883 HA-5222 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 3-176 511062-883