cddfn10 0516p

T
PL
IA
N
OM
C
*R
oH
S
Features
Applications
n RoHS compliant*
n USB 3.1
n Low capacitance - 0.02 pF (I/O to I/O)
n USB 3.0
LE
AD
F
RE
E
n ESD protection to IEC 61000-4-2 (Level 4)
CDDFN10-0516P - Surface Mount TVS Diode Array
General Information
Ro VE LEA
HS RS D
C ION FRE
OM S E
PL AR IA E
NT
*
The CDDFN10-0516P device provides ESD protection for highspeed data ports, meeting IEC 61000-4-2 (Level 4) requirements.
The Transient Voltage Suppressor array, protecting up to six data
lines, offers Working Peak Reverse Voltages of 5 V (one line),
3.3 V (two lines) and 2.2 V (four lines) compatible with USB 3.1.
2
5V
3.3 V
1
The DFN10 packaged device has an ultra-low typical capacitance
of only 0.02 pF between I/O lines. This allows it to be used for
protecting sensitive components used on high-speed interfaces.
The small footprint of the device allows for flow-through routing
on the PCB, helping to maintain matched impedances of the
high-speed data lines.
10
2.2 V
4
5
6
7
9
Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Peak Pulse Current (tp = 8/20 μS) (1)
ESD (per IEC 61000-4-2 Contact)
ESD (per IEC 61000-4-2 Air)
Operating Temperature
Storage Temperature
Symbol
Ipp
CDDFN10-0516P
4
10
15
-40 to +85
-55 to +150
TJ
TSTG
Unit
A
kV
kV
ºC
ºC
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Pin 2 (VBUS) to Ground
Parameter
Symbol
Working Peak Reverse Voltage
VWM_BUS
Breakdown Voltage @ 1 mA
VBR_BUS
Snap-back Voltage @ 50 mA
VSB_BUS
Leakage Current @ VWM_BUS
IR_BUS
Clamping Voltage @ IPP = 4 A
VC_BUS
Channel Capacitance @ 0 V, 1 MHz
CIN_BUS
Pin 1 or 10 (D+, D-) to Ground (Unless Otherwise Noted)
Parameter
Symbol
Working Peak Reverse Voltage
VWM_USB
Breakdown Voltage @ 1 mA
VBR_USB
Snap-back Voltage @ 50 mA
VSB_USB
Leakage Current @ VWM_USB
IR_USB
Forward Voltage @ 15 mA
VF_USB
Clamping Voltage @ IPP = 4 A
VC_USB
Channel Capacitance @ 1.65 V, 1 MHz
CIN_USB
Channel to Channel Capacitance
CCROSS_USB
@ 1.65 V, 1 MHz (2) (3)
Note 1: Pin 2 (VBUS) to Ground Note 2: Between Pins 1 and 10 (D+ to D-)
Note 3: Pin 9 = 0 V
Min.
Typ.
6
5.5
6.5
17
Min.
Typ.
Max.
5
Unit
V
V
V
μA
V
pF
2.5
22
0.9
7.2
0.35
0.5
Unit
V
V
V
μA
V
V
pF
0.02
0.04
pF
4.5
3.6
Max.
3.3
1
(Continued on next page)
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN10-0516P - Surface Mount TVS Diode Array
Electrical Characteristics - Continued (@ TA = 25 °C Unless Otherwise Noted)
Pin 4, 5, 6 or 7 (SSTX+, SSRX+, SSTX-, SSRX-) to Ground (Unless Otherwise Noted)
Parameter
Symbol
Min.
Working Peak Reverse Voltage
VWM_SS
Breakdown Voltage @ 1 mA
VBR_SS
4.5
Snap-back Voltage @ 50 mA
VSB_SS
2.4
Leakage Current @ VWM_SS
IR_SS
Forward Voltage @ 15 mA
VF_SS
Clamping Voltage @ IPP = 4 A
VC_SS
Channel Capacitance @ 1.2 V, 1 MHz
CIN_SS
Channel to Channel Capacitance
CCROSS_SS
@ 1.2 V, 1 MHz (3) (4)
Typ.
Max.
2.2
0.9
4.5
0.35
0.5
Unit
V
V
V
μA
V
V
pF
0.02
0.04
pF
1
Note 3: Pin 9 = 0 V
Note 4: Between any two I/O; Pins 4, 5, 6 or 7 (SSTX+, SSRX+, SSTX-, SSRX-)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN10-0516P - Surface Mount TVS Diode Array
Performance Curves
Typical Voltage vs. Capacitance CIN (4)
Typical Voltage vs. Capacitance CCROSS (5)
0.05
0.8
Input Capacitance (pF)
Input Capacitance (pF)
0.7
0.6
Pin 2 (VBUS) = Float,
Pin 9 (GND) = 0 V
0.5
0.4
0.3
0.2
f = 1 MHz,
T = 25 °C
0.1
0.0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1
0.04
Pin 2 (VBUS) = Float,
Pin 9 (GND) = 0 V
0.03
0.02
0.01
0.00
2.4 2.7 3.0 3.3
f = 1 MHz,
T = 25 °C
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7 3.0 3.3
Input Voltage (V)
Input Voltage (V)
Typical Analog Cross Talk (5)
0
0
-3
-10
Analog Cross Talk (dB)
Insertion Loss (dB)
Typical Insertion Loss S21 (4)
-6
-9
-12
-15
-18
-21
-24
7.4 GHz: -3 dB
-27
-30
-20
-30
-40
-50
-60
-70
1e+8
1e+9
1e+8
1e+10
1e+9
Frequency (Hz)
Typical Transmission Line Pulsing (TLP)
18
Transmission Line Pulsing (TLP) Current (A)
Transmission Line Pulsing (TLP) Current (A)
Typical Transmission Line Pulsing (TLP)
16
V_pulse
14
Pulse from a
transmission line
12
TLP_I
+
100 ns
10
TLP_V
DUT
-
8
6
4
VBUS to GND
2
0
0
1
2
3
4
5
6
7
8
1e+10
Frequency (Hz)
9
10
Transmission Line Pulsing (TLP) Voltage (V)
11
18
16
V_pulse
14
Pulse from a
transmission line
12
TLP_I
+
100 ns
10
TLP_V
DUT
-
8
6
Pin 4, 5, 6, 7
to GND
4
Pin 1, 10 to GND
2
0
0
1
2
3
4
5
6
7
8
9
10
Transmission Line Pulsing (TLP) Voltage (V)
Note 4: Any I/O Pin (1, 10, 4, 5, 6, or 7) to Ground (D+, D-, SSTX+, SSRX+, SSTX-, SSRX-)
Note 5: Between any two I/O Pins (1, 10, 4, 5, 6, or 7) (D+, D-, SSTX+, SSRX+, SSTX-, SSRX-)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
11
3312 - 2 mm SMD
Trimming
Potentiometer
CDDFN10-0516P
- Surface
Mount
TVS Diode Array
Applications Information
The Model CDDFN10-0516P was designed to provide ESD and surge protection for USB 3.0 and USB 3.1 applications. USB 3.x
controller ICs typically have device level ESD ratings of about 2 kV per ANSI/ESDA/JEDEC JS-001-2010, to prevent ESD damage
in a manufacturing environment. For this ANSI/ESDA/JEDEC JS-001-2010 test, a 100 pF cap capacitor is discharged into the device
input through a 1500 ohm resistor. A system level ESD requirement is, however, typically specified to IEC 61000-4-2, which is more
stringent than JESD22-A114F requirements. The IEC 61000-4-2 test discharges a 150 pF capacitor through a 330 ohm resistor. The
CDDFN10-0516P is designed to enable a USB3.x controller IC to meet system ESD levels as high as 10 kV (contact test) per the IEC
61000-4-2 Standard. The device also provides up to 4 A (8/20 µS) of surge protection on the 5 V VBUS line per IEC 61000-4-5.
The Bourns® Model CDDFN10-0516P provides protection for six signal lines and a 5 V power bus. Its ultra-low capacitance minimizes
signal distortion on USB 3.1 super-speed data lines with 10 Gbps data rates. The figure below shows the connection diagram for one
port of a USB 3.x application. USB 3.1 provides three voltage/current options for bus power: 5 V @ up to 2 A, 12 V @ up to 5 A and
20 V @ up to 5 A. The VBUS line should only be connected to Pin 2 of the CDDFN10-0516P device if the bus voltage is limited to the
5 V option. In cases where the bus voltage is 12 V or 20 V, a separate device is required to protect the VBUS line.
POWER
CIRCUIT(S)
VBUS
USB
CONNECTOR
VDD
GND
CDDFN10-0516P
1
D+
10
D-
2
VBUS
9
VBUS
SSTX+
SSTXSSRX+
3
NC
8
NC
4
7
5
6
SSRX-
D+
DVBUS
USB 3.x
CONTROLLER
SSTX+
SSTXSSRX+
SSRX-
Flow-through
package design
(Top View)
The flow-through package design of the Model CDDFN10-0516P simplifies signal routing on the printed circuit board. This minimizes
the effect of the device connection on the signal line impedance and on system performance. The 10 Gbps eye diagrams below show
that the loading of Pins 4 through 7 has a minimal impact on the performance of the USB 3.1 super-speed data lines.
Performance Without Protection
-15 ps 0 +15 ps
Performance With Protection
-15 ps 0 +15 ps
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
3312 - 2 mm SMD
Trimming
Potentiometer
CDDFN10-0516P
- Surface
Mount
TVS Diode Array
Product Dimensions
Device Pinout
This is a molded DFN10 package with lead free 100 % Matte Sn on
the lead frame. It has a flammability rating of UL 94V-0.
1
4.024 - 4.176
(0.158 - 0.164)
4.024 - 4.176
(0.158 - 0.164)
10
2
9
3
1.924 - 2.076
(0.076 - 0.082)
1.924 - 2.076
(0.076 - 0.082)
8
4
7
5
6
0.450 - 0.550
(0.018 - 0.022)
0.450 - 0.550
(0.018 - 0.022)
(Top View)
0.000 - 0.050
(0.000 - 0.002)
0.000 - 0.050
(0.000 - 0.002)
0.152
REF.
(0.006)
0.152
REF.
(0.006)
0.800
TYP.
(0.031)
0.800 N10
TYP.
(0.031)
N10
0.200
MIN.
(0.008)
0.200 N6
MIN.
(0.008)
N6
0.224 - 0.376
(0.009 - 0.015)
0.224 - 0.376
(0.009 - 0.015)
0.700 - 0.900
(0.028 - 0.035)
0.700 - 0.900
(0.028 - 0.035)
N5
N1
0.150
N1 - 0.250
(0.006 - 0.010)
0.150 - 0.250
(0.006 - 0.010)
N5
1.300 - 1.500
(0.051 - 0.059)
1.300 - 1.500
(0.051 - 0.059)
Function
D+, D(USB Differential Pair)
2
VBUS
3, 8
N.C.
4, 5, 6, 7
SSTX+, SSTX-,
SSRX+, SSRX(Super-Speed Pairs)
9
Ground
Center Pad
Ground
Typical Part Marking
CDDFN10-0516P.........................................................................516
Recommended Footprint
1.924 - 2.076
(0.076 - 0.082)
1.924 - 2.076
(0.076 - 0.082)
0.400
(0.015)
0.400
TYP.
(0.015)
TYP.
How to Order
CD DFN10 - 05 16 P
0.150 - 0.250
(0.006 - 0.010)
0.150 - 0.250
(0.006 - 0.010)
0.800
(0.031)
0.800
TYP.
(0.031)
TYP.
1.300 - 1.500
(0.051 - 0.059)
1.300 - 1.500
(0.051 - 0.059)
0.700 - 0.900
(0.028 - 0.035)
0.700 - 0.900
0.200
(0.028 - 0.035)
(0.008)
0.200
MIN.
(0.008)
MIN.
DIMENSIONS:
Pin
1, 10
0.600
(0.023)
0.600
TYP.
(0.023)
TYP.
Common Diode
Chip Diode
Package
DFN10 = DFN-10 Package
Working Peak Voltage
05 = 5 VRWM (Volts)
Number of Lines
16 = 1 Ground / 6 Data Lines
Suffix
P = Ultra-low Capacitance
MM
(INCHES)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
3312 - 2 mm SMD
Trimming
Potentiometer
CDDFN10-0516P
- Surface
Mount
TVS Diode Array
Packaging Information
The product is packaged in an 8 mm x 4 mm tape and reel format per EIA-481-A standard.
P
0
P
1
d
T
E
IndexHole
Pin1
Location
120°
F
D2
W
B
D1 D
P
A
Trailer
.......
.......
End
C
Device
.......
.......
Leader
.......
.......
.......
.......
10pitches(min.)
10pitches(min.)
W1
Start
DIMENSIONS:
MM
(INCHES)
DirectionofFeed
Item
Symbol
DFN-10
Carrier Width
A
2.21 ± 0.05
(0.087 ± 0.002)
Carrier Length
B
4.22 +0.05/-0.04
(0.166 +0.002/-0.002)
Carrier Depth
C
0.81 ± 0.05
(0.032 ± 0.002)
Sprocket Hole
d
1.50 +0.1/-0
(0.059 +0.004/-0)
Reel Outside Diameter
D
180 ± 3
(7.087 ± .118)
Reel Inner Diameter
D1
Feed Hole Diameter
D2
13.0 +0.5/-0.2
(0.512 +0.020/-0.008)
Sprocket Hole Position
E
1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position
F
5.50 ± 0.05
(0.217 ± 0.002)
Punch Hole Pitch
P
4.00 ± 0.10
(0.157 ± 0.004)
Sprocket Hole Pitch
P0
4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center
P1
2.00 ± 0.05
(0.079 ± 0.002)
50.0
MIN.
(1.969)
Overall Tape Thickness
T
0.6
MAX.
(0.024)
Tape Width
W
12.3
MAX.
(0.484)
Reel Width
W1
18.4
MAX.
(0.724)
Quantity per Reel
--
3000
Asia-Pacific:
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
EMEA:
Tel: +36 88 520 390
Fax: +36 88 520 211
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
01/16
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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