CDNBS08 T58CC

T
PL
IA
N
M
CO
*R
oH
S
Features
Applications
■ Protects four lines
■ PoE power protection
■ Unidirectional
■ DC power supply protection
■ 24 A peak surge current
■ RoHS compliant*
CDNBS08-T58CC - Common Cathode TVS Diode
General Information
The Model CDNBS08-T58CC is designed to protect the power section in Power over
Ethernet (PoE) applications. The device is packaged in an eight lead narrow body
SOIC package. Bourns® Chip Diodes are available in surface mount packages and are
easy to handle using standard pick and place equipment.
8
7
6
5
1
2
3
4
In addition to surge protection, the device provides Level 4 ESD protection per
IEC 61000-4-2.
Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Value
Unit
Peak Pulse Current (8/20 µs)
IPP
24
A
Peak Pulse Power (8/20 µs)
PPP
2700
W
Working Peak Reverse Voltage
VWM
58
V
kV
IEC 61000-4-2 Contact Discharge
ESD
30
Junction Temperature
TJ
-55 to +150
°C
Storage Temperature
TSTG
-65 to +150
°C
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Breakdown Voltage @ 1 mA
VBR
IBR = 1 mA
VBR Temperature Coefficient
VBR
IBR = 1 mA
Leakage Current
IR
VR = VWM
Capacitance
C
VR = -44 V, f = 1 MHz, 30 mV rms
Clamping Voltage
VC
IPP = 24 A (8/20 µs)
Forward Voltage
VF
IF = 1 A, TW = 100 µs
Min.
Typ.
Max.
Unit
64.4
68
71.2
V
0.1
TA = 25 °C
TA = 85 °C
%/°C
200
nA
1
µA
55
pF
100
1
V
V
Device Pinout
Pin
Function
1
ANODE 1
2
GND
3
GND
4
ANODE 2
5
ANODE 3
6
GND
7
GND
8
ANODE 4
Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
3312 - 2 mm SMD
Trimming
Potentiometer
CDNBS08-T58CC
- Common
Cathode
TVS Diode
Typical Leakage vs. Junction Temperature
Typical Capacitance vs. Reverse Voltage
1000
100
Capacitance (pF)
IR (nA)
100
10
1
f = 1 MHz
VOSC = 30 mV rms
0.1
VR = 58 V
10
0.01
0
50
75
100
125
44
150
46
48
50
54
56
58
3.0
3.5
VR (V)
Junction Temperature (°C)
Typical Clamping Voltage vs. Current
Typical Forward Voltage vs. Forward Current
100
IF Forward Current (A)
100
10
Current (A)
52
1
8/20 µs Waveform
0.1
10
1
8/20 µs Waveform
0.1
60
70
80
VC Clamping Voltage (V)
90
0
0.5
1.0
1.5
2.0
2.5
VF Forward Voltage (V)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
3312
- 2 mm SMD
Trimming
Potentiometer
CDNBS08-T58CC
- Common
Cathode
TVS Diode
Product Dimensions
Recommended Footprint
This is an RoHS compliant molded JEDEC narrow body SO-8
package with 100 % Sn plating on the lead frame. It weighs
approximately 15 mg and has a flammability rating of UL 94V-0.
A
B
A
D
B
C
C
E
DIMENSIONS = MILLIMETERS
(INCHES)
D
Dimensions
J
7 ° NOM.
3 PLCS.
45 °
E NOM.
G
4°
±4°
F
1.27
(0.050)
B
0.51
(0.020)
C
6.80
(0.268)
D
4.20
(0.165)
E
1.30
(0.051)
H
I
K
7 ° NOM.
4 PLCS.
L
A
Dimensions
A
4.80 - 5.00
(0.189 - 0.197)
B
3.81 - 4.00
(0.150 - 0.157)
C
5.80 - 6.20
(0.228 ± 0.244)
D
0.36 - 0.51
(0.014 - 0.020)
E
1.35 - 1.75
(0.053 - 0.069)
F
0.102 - 0.203
(0.004 - 0.008)
G
0.25 - 0.50
(0.010 - 0.020)
H
0.51 - 1.12
(0.020 - 0.044)
I
0.190 - 0.229
(0.0075 - 0.0090)
J
4.60 - 5.21
(0.181 - 0.205)
K
0.28 - 0.79
(0.011 - 0.031)
L
1.27
(0.050)
Typical Part Marking
CDNBS08-T58CC ............................................................... 4T58CC
How to Order
CD NBS08 - T 58 CC
Common Code
Chip Diode
Package
NBS08 = Narrow Body SOIC8 Package
Model
T = Transient Voltage Suppressor
Working Peak Reverse Voltage
58 = 58 VDC
Suffix
CC = Common Cathode Configuration
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
3312 - 2 mm SMD
Trimming
Potentiometer
CDNBS08-T58CC
- Common
Cathode
TVS Diode
Packaging Information
The product is packaged in tape and reel format per EIA-481 standard.
P
0
P
1
d
PART
ORIENTATION
T
E
Index Hole
120 °
F
D2
W
B
PIN 1
D1 D
P
A
Trailer
End
.......
.......
C
Device
.......
.......
.......
.......
Leader
.......
.......
W1
Start
DIMENSIONS:
10 pitches (min.)
10 pitches (min.)
MM
(INCHES)
Direction of Feed
Item
Symbol
NSOIC 8L
Carrier Width
A
6.7 ± 0.10
(0.264 ± 0.004)
Carrier Length
B
5.5 ± 0.10
(0.217 ± 0.004)
Carrier Depth
C
2.10 ± 0.10
(0.083 ± 0.004)
Sprocket Hole
d
1.55 ± 0.05
(0.061 ± 0.002)
Reel Outside Diameter
D
330
(12.992)
Reel Inner Diameter
D1
Feed Hole Diameter
D2
13.0 ± 0.20
(0.512 ± 0.008)
Sprocket Hole Position
E
1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position
F
3.50 ± 0.05
(0.138 ± 0.002)
Punch Hole Pitch
P
8.00 ± 0.10
(0.315 ± 0.004)
Sprocket Hole Pitch
P0
4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center
P1
2.00 ± 0.05
(0.079 ± 0.002)
Overall Tape Thickness
T
0.20 ± 0.10
(0.008 ± 0.004)
Tape Width
W
12.00 ± 0.20
(0.472 ± 0.008)
Reel Width
W1
Quantity per Reel
--
80.0
MIN.
(3.1500)
18.4
MAX.
(0.724)
2500
06/15
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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