INTERSIL HS

HS-508BRH
®
Data Sheet
August 11, 2009
Radiation Hardened 8 Channel CMOS
Analog Multiplexer with Overvoltage
Protection
FN4824.2
Features
• Electrically Screened to SMD # 5962-96742
The HS-508BRH is a dielectrically isolated, radiation
hardened, CMOS analog multiplexer incorporating an
important feature; it withstands analog input voltages much
greater than the supplies. This is essential in any system
where the analog inputs originate outside the equipment.
They can withstand a continuous input up to 10V greater than
either supply, which eliminates the possibility of damage when
supplies are off, but input signals are present. Equally
important, it can withstand brief input transient spikes of
several hundred volts; which otherwise would require complex
external protection networks. Necessarily, ON resistance is
somewhat higher than similar unprotected devices, but very
low leakage current combine to produce low errors.
Reference Application Notes 520 and 521 for further
information on the HS-508BRH multiplexer in general.
The HS-508BRH has been specifically designed to meet
exposure to radiation environments. Operation from -55°C to
+125°C is guaranteed.
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Gamma Dose (γ) . . . . . . . . . . . . . . . . . 3 x 105 Rad (Si)
- Dielectrically Isolated Device Islands
- SEP >100 Mev-mg/cm2
• Analog/Digital Overvoltage Protection
• ESD Rated to 3kV
• Fail Safe with Power Loss (No Latchup)
• Break-Before-Make Switching
• (Typ) DTL/TTL and CMOS Compatible Threshold
• Analog Signal Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
• Fast Access Time
• Supply Current at 1MHz Address Toggle . . . . . .4mA (Typ)
• Standby Power . . . . . . . . . . . . . . . . . . . . . . . .7.5mW (Typ)
• Pb-Free (RoHS Compliant)
Specifications for Rad Hard QML devices are controlled
by the Defense Supply Center in Columbus (DSCC). The
SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are
contained in SMD 5962-96742. A “hot-link” is provided
on our homepage for downloading.
www.intersil.com/spacedefense/newsafclasst.asp
Ordering Information
ORDERING NUMBER
(Note)
5962F9674202QEC
INTERNAL
MKT. NUMBER
HS1-508BRH-8
PART MARKING
Q 5962F96 74202QEC
TEMP. RANGE
(°C)
-55 to +125
PACKAGE
(Pb-Free)
16 Ld SBDIP
PKG. DWG.
D16.3
5962F9674202QXC
HS9-508BRH-8
Q 5962F96 74202QXC
-55 to +125
16 Ld FLATPACK
K16.A
5962F9674202VEC
HS1-508BRH-Q
Q 5962F96 74202VEC
-55 to +125
16 Ld SBDIP
D16.3
5962F9674202VXC
HS9-508BRH-Q
Q 5962F96 74202VXC
-55 to +125
16 Ld FLATPACK
K16.A
HS1-508BRH/PROTO
HS1-508BRH/PROTO
HS1- 508BRH /PROTO
-55 to +125
16 Ld SBDIP
D16.3
HS9-508BRH/PROTO
HS9-508BRH/PROTO
HS9- 508BRH /PROTO
-55 to +125
16 Ld FLATPACK
K16.A
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible
with both SnPb and Pb-free soldering operations.
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright Intersil Americas Inc. 2001, 2009. All Rights Reserved
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HS-508BRH
Pinouts
HS9-508BRH
(16 LD FLATPACK)
MIL-STD-1835, CDFP4-F16
TOP VIEW
HS-508BRH
(16 LD SIDEBRAZE DIP)
MIL-STD-1835, CDIP2-T16
TOP VIEW
AO 1
16 A1
A0
1
16
A1
EN 2
15 A2
EN
2
15
A2
-VSUP
3
14
GND
IN1
4
13
+VSUP
IN2
5
12
IN5
14 GND
-VSUP 3
IN 1 4
13 +VSUP
IN 2 5
12 IN 5
IN3
6
11
IN6
IN 3 6
11 IN 6
IN4
7
10
IN7
IN 4 7
10 IN 7
OUT
8
9
IN8
OUT 8
9 IN 8
Functional Diagram
P
A0
IN 1
N
1
DIGITAL
ADDRESS
A1
OUT
A2
8
EN
P
ADDRESS INPUT
BUFFER AND
LEVEL SHIFTER
DECODERS
N
IN 8
MULTIPLEX
SWITCHES
TABLE 1. TRUTH TABLE
A2
A1
A0
EN
“ON” CHANNEL
X
X
X
L
NONE
L
L
L
H
1
L
L
H
H
2
L
H
L
H
3
L
H
H
H
4
H
L
L
H
5
H
L
H
H
6
H
H
L
H
7
H
H
H
H
8
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FN4824.2
August 11, 2009
HS-508BRH
Die Characteristics
DIE DIMENSIONS
Backside Finish
120 mils x 93 mils x 19 mils
Silicon
INTERFACE MATERIALS
ASSEMBLY RELATED INFORMATION
Glassivation
Substrate Potential
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8kÅ ±1kÅ
Unbiased (DI)
ADDITIONAL INFORMATION
Top Metallization
Worst Case Current Density
Type: AlSiCu
Thickness: 16kÅ ±2kÅ
6.68e04 A/cm2
Transistor Count
Substrate
506
Rad Hard Silicon Gate
Dielectric Isolation
Metallization Mask Layout
HS-508BRH
IN2
(5)
IN1
(4)
-V
(3)
IN3
(6)
EN
(2)
IN4
(7)
OUT
(8)
A0
(1)
IN8
(9)
A1
(16)
A2
(15)
IN7
(10)
IN6
(11)
IN5
(12)
+V
(13)
GND
(14)
TABLE 2. HS-508BRH PAD COORDINATES
RELATIVE TO PIN 1
PIN NUMBER
PAD NAME
X COORDINATES
Y COORDINATES
1
A0
0
0
2
EN
-342
0
3
V-
-818
-653
4
IN1
-818
-879
5
IN2
-818
-1221
6
IN3
-598
-2579
7
IN4
-224
-2579
8
OUT
-38
-2579
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FN4824.2
August 11, 2009
HS-508BRH
TABLE 2. HS-508BRH PAD COORDINATES (Continued)
RELATIVE TO PIN 1
PIN NUMBER
PAD NAME
X COORDINATES
Y COORDINATES
9
IN8
314
-2579
10
IN7
724
-2579
11
IN6
1066
-2579
12
-IN5
1066
-761
13
V+
1100
-287
14
GND
1038
0
15
A2
684
0
16
A1
342
0
NOTE: Dimensions in microns
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4
FN4824.2
August 11, 2009