Power Transistors 2SC5128 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 10 A Collector current IC 5 A Base current IB 3 A Collector to emitter voltage Collector power TC=25°C dissipation Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package W 2 ■ Electrical Characteristics 15.0±0.3 ● 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw +0.5 ● 13.7–0.2 ● φ3.2±0.1 3.0±0.2 ■ Features 9.9±0.3 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 500 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 2A 8 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.4A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 2A, IB = 0.4A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 800V, IE = 0 max Collector cutoff current IC = 2A, IB1 = 0.4A, IB2 = – 0.8A, VCC = 200V V 20 MHz 1.0 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC5128 PC — Ta IC — VCE 50 (1) 40 30 20 TC=25˚C 700mA 600mA 500mA 400mA 300mA 4 200mA 3 100mA 2 50mA 1 (4) (3) IB=800mA 5 (2) 10 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 VBE(sat) — IC Forward current transfer ratio hFE 10 3 TC=–25˚C 100˚C 0.3 0.1 0.3 12 1 3 100 TC=100˚C 30 25˚C –25˚C 10 3 0.1 0.3 1 3 0.1 TC=–25˚C 0.03 100˚C 0.01 0.01 0.03 30 10 3 1 30 100 Collector to base voltage VCB (V) 1 3 10 30 10 3 1 0.3 0.1 0.3 1 3 10 Area of safe operation (ASO) 30 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C 30 Switching time ton,tstg,tf (µs) 100 0.3 Collector current IC (A) ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 0.1 VCE=10V f=1MHz TC=25˚C 0.1 0.01 0.03 10 100 10 0.3 Collector current IC (A) Cob — VCB 3 1 fT — IC 300 1 0.01 0.03 10 1000 1 25˚C 3 100 VCE=5V Collector current IC (A) 300 10 Collector current IC (A) 10 3 tstg 1 ton 0.3 tf 0.1 3 4 5 6 7 8 DC 0.1 0.03 0.003 2 10ms 0.3 0.01 Collector current IC (A) t=0.5ms 1ms 1 0.01 1 IC 3 0.03 0 ICP 10 Collector current IC (A) Base to emitter saturation voltage VBE(sat) (V) 30 0.1 0.01 0.03 10 1000 IC/IB=5 25˚C 8 IC/IB=5 30 hFE — IC 100 1 6 100 Collector to emitter voltage VCE (V) Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) — IC 6 Collector current IC (A) Collector power dissipation PC (W) 60 Non repetitive pulse TC=25˚C 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC5128 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 8 Lcoil=50µH IC/IB=5 (IB1=–IB2) TC≤100˚C Collector current IC (A) 7 L coil 6 IB1 5 T.U.T –IB2 Vin 4 IC VCC 3 2 Vclamp tW 1 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3