Composite Transistors XP1C301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) 2.1±0.1 0.65 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SB709A+2SD601A 0 to 0.1 ● ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V Collector current IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Tr1 Tr2 0.7±0.1 ■ Basic Part Number of Element Storage temperature 0.12 – 0.02 0.2 ● Two elements incorporated into one package. (Tr1 base is connected to Tr2 emitter.) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 ■ Features 0.65 0.425 ● 0.2±0.05 Unit: mm For general amplification 1 : Emitter (Tr1) 2 : Base (Tr1) Emitter (Tr2) 0.2±0.1 3 : Base (Tr2) 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 4R Internal Connection 1 Tr1 5 2 3 Tr2 4 1 Composite Transistors ■ Electrical Characteristics ● (Ta=25˚C) Tr1 Parameter Collector to base voltage Symbol Conditions min typ max Unit VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V ICBO VCB = –20V, IE = 0 – 0.1 µA ICEO VCE = –10V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10V, IC = –2mA Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF Collector cutoff current ● 160 460 – 0.3 – 0.5 V Tr2 Parameter Collector to base voltage Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Collector cutoff current 2 XP1C301 160 460 0.3 V Composite Transistors XP1C301 Common characteristics chart PT — Ta Total power dissipation PT (mW) 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Characteristics charts of Tr1 IC — VCE IC — I B Ta=25˚C –200µA –150µA –20 –100µA –10 Base current IB (µA) –250µA –40 –30 –40 –30 –20 –300 –250 –200 –150 –50 0 0 0 0 –2 –4 –6 –8 –10 –12 –14 –16 –18 –100 –200 –300 IC — VBE –25˚C –160 –120 –80 –40 IC/IB=10 Ta=75˚C 25˚C –0.3 –25˚C –0.1 –0.03 –0.01 –0.003 0 –0.4 –0.8 –1.2 –1.6 –2.0 Base to emitter voltage VBE (V) –0.001 –1 –3 –10 –30 –1.2 –1.6 hFE — IC –3 –1 –0.8 600 –100 –300 –1000 Collector current IC (mA) VCE=–10V Forward current transfer ratio hFE 25˚C Collector to emitter saturation voltage VCE(sat) (V) VCE=–5V 0 –0.4 Base to emitter voltage VBE (V) VCE(sat) — IC –10 –240 Ta=75˚C 0 –400 Base current IB (µA) Collector to emitter voltage VCE (V) –200 –100 –10 –50µA 0 VCE= – 5V Ta=25˚C –350 –50 Collector current IC (mA) Collector current IC (mA) VCE= – 5V Ta=25˚C IB=–300µA –50 Collector current IC (mA) IB — VBE –400 –60 –60 500 400 Ta=75˚C 300 25˚C –25˚C 200 100 0 –1 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) 3 Composite Transistors XP1C301 fT — IE Cob — VCB 120 100 80 60 40 0 0.1 0.3 1 3 10 30 f=1MHz IE=0 Ta=25˚C 7 6 5 4 3 2 –2 –3 –5 2 –10 –20 –30 –50 0 0.01 0.03 –100 h Parameter — IE VCB=–5V Rg=50kΩ Ta=25˚C 0.3 1 3 10 h Parameter — VCE 300 300 200 200 IE=2mA f=270Hz Ta=25˚C hfe hfe 16 0.1 Emitter current IE (mA) Collector to base voltage VCB (V) NF — IE 18 3 1 Emitter current IE (mA) 20 4 1 0 –1 100 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 5 Noise figure NF (dB) Collector output capacitance Cob (pF) 100 100 12 Parameter h 14 f=100Hz 10 1kHz 8 50 Parameter h Transition frequency fT (MHz) VCB=–10V Ta=25˚C 140 20 Noise figure NF (dB) NF — IE 6 8 160 hoe (µS) 30 20 10 50 30 20 hoe (µS) 10 10kHz 6 5 4 5 hie (kΩ) VCE= – 5V f=270Hz Ta=25˚C 2 2 0 0.1 0.2 0.3 0.5 1 2 3 5 1 0.1 10 hre (×10–4) 3 3 Emitter current IE (mA) hre (×10–4) 0.2 0.3 0.5 1 2 3 5 hie (kΩ) 2 1 0.1 10 0.2 0.3 0.5 1 2 3 5 10 Collector to emitter voltage VCE (V) Emitter current IE (mA) Characteristics charts of Tr2 IC — VCE IB — VBE Ta=25˚C VCE=10V VCE=10V Ta=25˚C IB=160µA 200 40 120µA 100µA 30 80µA 20 60µA 40µA Base current IB (µA) 140µA Collector current IC (mA) 1000 50 Collector current IC (mA) IC — VBE 240 1200 60 800 600 400 25˚C 120 Ta=75˚C –25˚C 80 40 200 10 160 20µA 0 2 4 6 8 Collector to emitter voltage VCE 4 0 0 0 10 (V) 0 0.2 0.4 0.6 0.8 Base to emitter voltage VBE 1.0 (V) 0 0.4 0.8 1.2 1.6 Base to emitter voltage VBE (V) 2.0 Composite Transistors XP1C301 IC — IB VCE(sat) — IC Collector to emitter saturation voltage VCE(sat) (V) 100 VCE=10V Ta=25˚C Collector current IC (mA) 200 160 120 80 40 0 0 200 400 600 800 10 3 1 0.3 25˚C 0.1 Ta=75˚C –25˚C 0.03 Base current IB (µA) 0.3 1 3 10 30 100 Collector current IC (mA) fT — IE VCE=10V 500 Ta=75˚C 400 25˚C 300 –25˚C 200 100 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) NV — IC 240 300 VCB=10V Ta=25˚C 240 Noise voltage NV (mV) Transition frequency fT (MHz) IC/IB=10 30 0.01 0.1 1000 hFE — IC 600 Forward current transfer ratio hFE 240 180 120 60 VCE=10V GV=80dB Function=FLAT 200 Ta=25˚C 160 Rg=100kΩ 120 80 22kΩ 4.7kΩ 40 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 10 20 30 50 100 200 300 500 1000 Collector current IC (µA) 5