T PL IA N M CO *R oH S Features Applications ■ 3 kA, 8/20 µs surge capability ■ AC line protection ■ Low clamping voltage under surge ■ High power DC bus protection ■ Bidirectional TVS ■ Excellent performance over temperature PTVS3-xxxC-TH Series High Voltage, High Current TVS Diodes General Information The Model PTVS3-xxxC-TH high voltage, bidirectional TVS diode series is designed for use in AC line and high power DC bus clamping applications. The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current surge requirements. Absolute Maximum Ratings (@ TA = 25 °C Unless Otherwise Noted) Rating PTVS3-380C-TH PTVS3-430C-TH Repetitive Standoff Voltage Peak Current Rating per 8/20 μs IEC 61000-4-5 Symbol Value Unit VWM 380 430 V IPPM 3 kA Operating Junction Temperature Range TJ -55 to +125 °C Storage Temperature Range TS -55 to +150 °C 260 °C Lead Temperature, Soldering (10 s) Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted) Parameter ID Standby Current V(BR) Breakdown Voltage VC Clamping Voltage (1) Test Conditions Min. Typ. Max. Unit 10 μA 401 440 422 465 443 490 V VD = VWM IBR = 10 mA PTVS3-380C-TH PTVS3-430C-TH IPP = 10 kA PTVS3-380C-TH PTVS3-430C-TH V(BR) Temperature Coefficient C Capacitance F = 10 kHz, Vd = 1 Vrms PTVS3-380C-TH PTVS3-430C-TH 520 580 V 0.1 %/°C 0.35 0.40 nF (1) V measured at the time which is coincident with the peak surge current. C Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116 EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211 The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700 www.bourns.com *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. PTVS3-xxxC-TH Series High Voltage, High Current TVS Diodes Performance Graphs V-I Characteristic Typical VBR vs. Junction Temperature 16 Percent of VBR Change 14 12 10 8 6 25 °C 4 2 0 -4 -6 -8 -40 -20 0 20 40 60 80 100 120 140 160 Junction Temperature (TJ) - °C Typical Surge Current Derating Current 8/20 µs Waveform per IEC 61000-4-5 IPP – Peak Pulse Current (% of IPP) Percent of Rated Value 120 110 100 90 80 70 60 50 40 30 20 10 120 Test Waveform Parameters tt = 8 µs td = 20 µs tt 100 80 et 60 40 td = t|IPP/2 20 0 0 10 5 0 0 25 50 75 100 125 150 Ambient Temperature (°C) 15 20 25 30 t – Time (µs) 175 Typical Waveform Under Surge This graph shows the typical device surge current derating versus ambient temperature when subjected to the 8/20 µs current waveform per the IEC 61000-4-5 specification. This device is not intended for continuous operation at temperatures above 125 °C. Current Voltage Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. 0 10 20 30 t – Time (µs) 40 50 PTVS3-xxxC-TH Series High Voltage, High Current TVS Diodes Product Dimensions Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead finish conforms to the solderability requirements of JESD22-B102, Pb free solder. Package dimensions are shown below: G Dim. F A B D C C D H E B F E A DIMENSIONS: MM (INCHES) G H Typical Part Marking PTVS3-380C-TH .......................................................................3380 PTVS3-430C-TH .......................................................................3430 PTVS3-380C-TH PTVS3-430C-TH 24.15 ± 0.72 (0.951 ± 0.028) 2.40 ± 0.50 (0.094 ± 0.020) 1.75 ± 1.25 (0.069 ± 0.049) 10.80 Max. (0.425) 1.25 ± 0.05 (0.049 ± 0.002) 9.30 Max. (0.366) 16.50 Max. (0.650) 6.00 ± 1.00 (0.236 ± 0.039) How to Order PTVS 3 - 380 C - T H Series PTVS = Power TVS High Current Diode Peak Current Rating 3 = 3 kA Repetitive Standoff Voltage 380 = 380 V 430 = 430 V Suffix C = Bidirectional Device Package T = Through-Hole Temperature H = High Temperature Series REV. 11/15 Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications.