PANASONIC 2SC5779

Power Transistors
2SC5779
Silicon NPN epitaxial planar type
Unit: mm
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
4.6±0.2
9.9±0.3
3.0±0.5
2.9±0.2
15.0±0.5
φ 3.2±0.1
• High-speed switching (tstg: storage time/tf: fall time is short)
• Low collector-emitter saturation voltage VCE(sat)
• Superior forward current transfer ratio hFE linearity
• TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
13.7±0.2
4.2±0.2
Solder Dip
■ Features
2.6±0.1
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
■ Absolute Maximum Ratings TC = 25°C
1
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
50
V
Collector-emitter voltage (Base open)
VCEO
50
V
Emitter-base voltage (Collector open)
VEBO
6
V
Collector current
IC
10
A
Peak collector current
ICP
20
A
Collector power dissipation
PC
25
W
Ta = 25°C
1.4±0.2
1.6±0.2
2
3
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Internal Connection
C
B
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
Collector-base cutoff current (Emitter open)
ICBO
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Max
Unit
VCB = 50 V, IE = 0
100
µA
ICEO
VCE = 50 V, IB = 0
100
µA
IEBO
VEB = 6 V, IC = 0
1
mA
hFE1
VCE = 2 V, IC = 1 A
200
hFE2
VCE = 2 V, IC = 7 A
100
VCE(sat)
Conditions
Min
Typ
50
V

IC = 5 A, IB = 250 mA
0.5
V
fT
VCE = 10 V, IC = 0.1 A, f = 10 MHz
Turn-on time
ton
IC = 4 A, Resistance loaded
0.5
µs
Storage time
tstg
IB1 = 0.4 A, IB2 = − 0.4 A
1.0
µs
VCC = 40 V
0.15
µs
Transition frequency
Fall time
tf
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
SJD00289AED
1
2SC5779
IC  VBE
7
VCE = 2 V
6
(1)
Collector current IC (A)
Collector power dissipation PC (W)
(1) TC = Ta
(2) Without heat sink
30
VCE(sat)  IC
Collector-emitter saturation voltage VCE(sat) (V)
PC  Ta
20
10
5
4
3
2
1
(2)
0
0
40
80
120
0
160
0
0.5
Ambient temperature Ta (°C)
100
0.1
1
10
t = 1 ms
ICP
Collector current IC (A)
Forward current transfer ratio hFE
100
Ta = 25°C
VCE = 2 V
0.01
2.0
t = 10 ms
t=1s
1
0.1
0.01
100
Non repetitive pulse
TC = 25°C
IC
10
Collector current IC (A)
1
10
100
1 000
Collector-emitter voltage VCE (V)
Rth  t
Thermal resistance Rth (°C/W)
1 000
Ta = 25°C
100
(1)
(2)
10
1
0.1
0.001
(1) Without heat sink
(2) With a 100 × 100 × 2 mm Al heat sink
0.01
0.1
1
10
100
Time t (s)
2
SJD00289AED
IC / IB = 20
0.1
0.01
0.001
0.1
1
Collector current IC (A)
Area of safe operation
1 000
10
0.001
1.5
Base-emitter voltage VBE (V)
hFE  IC
10 000
1.0
1
1 000
10
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
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permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL