C650 C850

PL
IA
N
T
Features
CO
M
■ Formerly
The C650 & C850 Series are currently
available, but not recommended for
new designs. Bourns® TBU-CA
Series is preferred.
brand
*R
oH
S
■ Extremely high speed performance
■ Blocks high voltages and currents
■ Very high bandwidth; GHz compatible
■ Small package, minimal PCB area
■ Simple, superior circuit protection
■ RoHS compliant*, UL Recognized
C650 and C850 Series TBU® High-Speed Protectors
Transient Blocking Units - TBU® Devices
Bourns® C650 and C850 series products are high-speed
bidirectional protection components, constructed using
MOSFET semiconductor technology, designed to protect
against faults caused by short circuits, AC power cross,
induction and lightning surges.
Agency Approval
UL recognized component File # E315805.
Industry Standards
Description
Model
C650
C850
®
The TBU high-speed protector, triggering as a function of
the MOSFET, blocks surges and provides an effective barrier
behind which sensitive electronics are not exposed to large
voltages or currents during surge events. The TBU® device is
provided in a surface mount DFN package and meets industry
standard requirements such as RoHS and Pb Free solder
reflow profiles.
GR-1089
Port Type 1, 3, 5
Telcordia
ITU-T
GR-974
C650
C850
K.20, K.20E, K.21, K.21E, K.45
C850
Absolute Maximum Ratings (Tamb = 25 °C)
Symbol
Parameter
Value
Unit
Vimp
Maximum protection voltage for impulse faults with rise time ≥ 1 µsec
C650-xxx-WH
C850-xxx-WH
650
850
V
Vrms
Maximum protection voltage for continuous Vrms faults
C650-xxx-WH
C850-xxx-WH
300
425
V
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-65 to +150
°C
Electrical Characteristics (Tamb = 25 °C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
100
180
260
mA
Iop
Maximum current through the device that will not cause
current blocking
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Itrigger
Typical current for the device to go from normal operating
state to protected state
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Iout
Maximum current through the device
Cx50-100-WH
Cx50-180-WH
Cx50-260-WH
Rdevice
Series resistance of the TBU® device
C650-100-WH
C650-180-WH
C650-260-WH
C850-100-WH
C850-180-WH
C850-260-WH
tblock
Maximum time for the device to go from normal operating
state to protected state
Iquiescent
Current through the triggered TBU® device with 50 Vdc circuit
voltage
1
mA
Vreset
Voltage below which the triggered TBU® device will transition to
normal operating state
14
V
150
220
330
12
8
8
17
11
11
C650 and C850 TBU® High-Speed Protectors are bidirectional; specifications are valid in both directions.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
mA
200
360
520
mA
14.5
10
10
19
14
14
Ω
1
µs
Applications
■ Combo voice / xDSL linecards
■ Voice linecards
■ MDF, primary protection modules
■ Process control equipment
■ Test and measurement equipment
■ General electronics
C650 and C850 Series TBU® High-Speed Protectors
Typical Performance Characteristics
Time to Block vs. Fault Current
V-I Characteristics
1
+I
Itrigger
-Vreset
+V
Vreset
Time to Block (sec)
0.1
0.01
0.001
0.0001
0.00001
0.000001
0.0000001
0.1
1
10
Fault Current (A )
-Itrigger
Current vs. Temperature
140
% of Current
120
100
80
60
40
20
-40
-20
0
20
40
60
80
Temperature (°C)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
100
1000
C650 and C850 Series TBU® High-Speed Protectors
Operational Characteristics
The graphs below demonstrate the operational characteristics of the TBU® protector. For each graph the fault voltage, protected side
voltage, and current is presented.
V2
V1
TEST CONFIGURATION DIAGRAM
C650 Lightning, 650 V
Load
C850 Lightning, 850 V
400 mA/div.
2
3
100 V/div.
400 mA/div.
100 V/div.
3
2
1
1
1 µs/div.
Ch1 V1
Ch2 V2
Ch1 V1
Ch3 Current
C650 Power Fault, 300 Vrms, 100 A
1 µs/div.
Ch2 V2
Ch3 Current
C850 Power Fault, 425 Vrms, 100 A
3
3
2
200 mA/div.
100 V/div.
100 V/div.
200 mA/div.
2
1
1
4 ms/div.
4 ms/div.
Ch1 V1
Ch2 V2
Ch3 Current
Ch1 V1
Ch2 V2
Ch3 Current
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
C650 and C850 Series TBU® High-Speed Protectors
Product Dimensions
J
B
H
D
A
E
3
XXXXX
YWWLL
C
Dim.
J
H
2
D
K
A
A1
1
B
F
C
PIN 1
A1
TOP VIEW
SEATING PLANE
SIDE VIEW
K
BOTTOM VIEW
E
F
Recommended Pad Layout
0.70
(.028)
1.15
(.045)
2.625
(.103)
3.55
(.140)
D
H
Pad Designation
Pad #
Apply
1
In/Out
2
NC
3
In/Out
J
K
Min.
Typ.
Max.
0.80
(.031)
0.00
(.000)
8.15
(.321)
3.90
(.154)
2.55
(.100)
1.10
(.043)
3.45
(.136)
0.20
(.008)
0.65
(.026)
0.20
(.008)
0.90
(.035)
0.025
(.001)
8.25
(.325)
4.00
(.157)
2.60
(.102)
1.15
(.045)
3.50
(.138)
0.25
(.010)
0.70
(.028)
0.25
(.010)
1.00
(.039)
0.050
(.002)
8.35
(.329)
4.10
(.161)
2.65
(.104)
1.20
(.047)
3.55
(.140)
0.30
(.012)
0.75
(.030)
0.30
(.012)
DIMENSIONS:
MM
(INCHES)
NC = Solder to PCB; do not make electrical
connection, do not connect to ground.
TBU® protectors have matte-tin termination finish. Suggested layout should use non-solder mask define (NSMD). Recommended stencil thickness is 0.10-0.12 mm (.004-.005 in.) with stencil opening size 0.025 mm (.0010 in.) less than the device pad size. As when heat sinking any
power device, it is recommended that, wherever possible, extra PCB copper area is allowed. For minimum parasitic capacitance, do not allow
any signal, ground or power signals beneath any of the pads of the device.
Thermal Resistances
Symbol
Rth(j-a)
Parameter
Junction to leads (package)
Value
Unit
116
°C/W
Reflow Profile
Profile Feature
Average Ramp-Up Rate (Tsmax to Tp)
Preheat
- Temperature Min. (Tsmin)
- Temperature Max. (Tsmax)
- Time (tsmin to tsmax)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classification Temperature (Tp)
Time within 5 °C of Actual Peak Temp. (tp)
Ramp-Down Rate
Time 25 °C to Peak Temperature
Pb-Free Assembly
3 °C/sec. max.
150 °C
200 °C
60-180 sec.
217 °C
60-150 sec.
260 °C
20-40 sec.
6 °C/sec. max.
8 min. max.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
C650 and C850 Series TBU® High-Speed Protectors
How to Order
Typical Part Marking
C 650 - 180 - WH
MANUFACTURER’S
TRADEMARK
Form Factor
C = One TBU® protector in the device
Impulse Voltage Rating
650 = 650 V
850 = 850 V
5 DIGIT PRODUCT CODE:
• 1ST ALPHA CHARACTER INDICATES PRODUCT FAMILY.
C = C650/C850 SERIES
• 2ND & 3RD DIGITS INDICATE IMPULSE VOLTAGE.
• 4TH & 5TH DIGITS INDICATE TRIGGER CURRENT.
XXXXX
YWWLL
Iop Indicator
100 = 100 mA
180 = 180 mA
260 = 260 mA
PIN 1
MANUFACTURING
DATE CODE:
• 1ST DIGIT INDICATES THE YEAR.
• 2ND & 3RD DIGITS INDICATE THE WEEK NUMBER.
• 4TH & 5TH DIGITS INDICATE LOT CODE.
Packaging Specifications (per EIA468-B)
P0
E
D
t
B
P2
TOP
COVER
TAPE
A
N
F
W
C
D
B0
K0
CENTER
LINES OF
CAVITY
A0
P
D1
EMBOSSMENT
G (MEASURED AT HUB)
USER DIRECTION OF FEED
QUANTITY: 3000 PIECES PER REEL
A
Min.
Max.
326
330.25
(12.835) (13.002)
Device
C650, C850
Device
C650, C850
Device
C650, C850
A0
Min.
4.2
(.165)
B0
Max.
4.4
(.173)
Min.
8.45
(.333)
Max.
1.3
(.051)
Min.
7.9
(.311)
K0
Min.
1.1
(.043)
B
Min.
1.5
(.059)
C
Max.
2.5
(.098)
Min.
12.8
(.504)
Max.
1.6
(.063)
Min.
1.5
(.059)
Max.
4.1
(.161)
Min.
1.9
(.075)
D
Max.
8.65
(.341)
Min.
1.5
(.059)
Max.
8.1
(.319)
Min.
3.9
(.159)
P
D
Max.
13.5
(.531)
Min.
20.2
(.795)
Max.
Min.
1.65
(.065)
D1
P0
Max.
-
G
Ref.
16.5
(.650)
N
Ref.
102
(4.016)
E
-
P2
F
Max.
1.85
(.073)
Min.
7.4
(.291)
Max.
0.35
(.014)
Min.
15.7
(.618)
t
Max.
2.1
(.083)
Min.
0.25
(.010)
max.
7.6
(.299)
W
DIMENSIONS:
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Max.
16.3
(.642)
MM
(INCHES)
C650 and C850 Series TBU® High-Speed Protectors
Reference Application
The C-series devices are general protectors that can be used in a variety of applications. The basic operation of the device will be
demonstrated using the single line application shown in the figure below. The test circuit was subjected to a 1000 V, 10/700 µs surge
waveform. The devices used were the TBU-C850-100-WH and a 2031-42T-SM-RPLF GDT (OVP) with a 10 ohm resistor for the load
impedance.
Line
OVP
TBU® Device
ZLOAD
General Application Circuit
900
1000
800
800
700
600
600
400
TBU® Device Current
500
200
400
0
300
-200
GDT Voltage
200
-400
100
-600
0
-800
100
TBU® Device Current (mA)
Voltage Across GDT (V)
The graph below shows the waveforms for the voltage across the overvoltage protector (GDT) and the current through the TBU®
device. As the input line voltage increases, the current through the TBU® device increases rapidly until the trip current is reached. Due
to finite reaction time for fast transients, the peak level may exceed the low frequency data sheet maximum for a very short period,
typically ~100 ns. After this initial overshoot, the TBU® device will transition to the protected state, setting the current to the nominal
current limiting level (~150 mA for this example). The TBU® device will then reduce the current down it to its very low quiescent level
of 1 mA, typically. As the input line voltage increases to about 500 V, the GDT is triggered, reducing the input line voltage to a very low
level which prevents the TBU® device from being subjected to a voltage level which exceeds its maximum rating (850 V in this
example). The TBU® High-Speed Orotector and the GDT will remain in these states until the surge ends, which is about 700 µs later
in this example. Only the first 4 µs of the surge are shown in the graph. For surges or AC voltages below the GDT breakover voltage,
the GDT will not activate, and the TBU® device will stay in the protecting mode, blocking high voltages from the protected equipment.
-1000
0
0.5
1
1.5
2
2.5
3
3.5
4
Time (µs)
TBU-C850-100-WH Response to a 1000 V, 10/700 µs Surge
REV. 09/15
“TBU” is a registered trademark of Bourns, Inc. in the United States and other countries.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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