Transistor 2SD814, 2SD814A Silicon NPN epitaxial planer type For high breakdown voltage low-frequency and low-noise amplification Unit: mm ■ Features Collector to 2SD814 base voltage 2SD814A Collector to 2SD814 Emitter to base voltage VEBO Peak collector current ICP 150 1.45 0.95 0.95 +0.1 0.4 –0.05 +0.1 0.1 to 0.3 0.4±0.2 V 185 5 V 100 mA Collector current IC 50 mA PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : P(2SD814) L(2SD814A) (Ta=25˚C) Parameter Symbol Collector cutoff current +0.2 V 185 Collector power dissipation ■ Electrical Characteristics 2.9 –0.05 Unit 150 VCEO emitter voltage 2SD814A 3 0.16 –0.06 Ratings VCBO 1 2 (Ta=25˚C) Symbol 0.65±0.15 0 to 0.1 Parameter 1.5 –0.05 0.8 ■ Absolute Maximum Ratings 1.9±0.2 ● +0.25 0.65±0.15 +0.2 ● +0.2 2.8 –0.3 High collector to emitter voltage VCEO. Low noise voltage NV. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.1 –0.1 ● Conditions min typ max Unit 1 µA ICBO VCB = 100V, IE = 0 VCEO IC = 100µA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 5 Forward current transfer ratio hFE* VCE = 5V, IC = 10mA 90 Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz 150 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 2.3 pF 150 mV Collector to emitter 2SD814 voltage 2SD814A Noise voltage *h FE VCE = 10V, IC = 1mA, GV = 80dB NV Rg = 100kΩ, Function = FLAT 150 V 185 V 330 1 V Rank classification Marking Symbol Rank Q R S hFE 90 ~ 155 130 ~ 220 185 ~ 330 2SD814 PQ PR PS 2SD814A LQ LR LS 1 2SD814, 2SD814A Transistor PC — Ta IC — VCE 120 100 160 120 80 40 80 60 0.4mA 40 0.2mA 20 60 80 100 120 140 160 Ambient temperature Ta (˚C) 2 10 3 1 Ta=75˚C 25˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 4 3 2 1 0 3 10 6 8 10 12 0 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 200 500 400 Ta=75˚C 25˚C –25˚C 200 100 0 0.1 0.3 1 3 2.0 VCB=10V Ta=25˚C VCE=10V 300 1.6 Base to emitter voltage VBE (V) fT — I E 10 30 Collector current IC (mA) 5 1 4 600 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 0.1 40 hFE — IC IC/IB=10 0.3 60 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Transition frequency fT (MHz) 40 Ta=75˚C 80 20 0 20 25˚C 100 IB=2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 0 2 IC — VBE 120 Collector current IC (mA) Collector power dissipation PC (mW) 240 100 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) –100