CD2010 B160

PL
IA
NT
Features
S
CO
M
■
6
*R
oH
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■
■
Applications
Lead free device (RoHS compliant*)
Low profile
Low power loss, high efficiency
UL 94V-0 classification
■
■
■
■
High frequency switching power supplies
Inverters
Free wheeling
Polarity protection
CD2010-B160 – Surface Mount Schottky Rectifier Diode
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components. Bourns offers Schottky Rectifier Diodes for rectification applications, in
compact chip package 2010 size format, which offer PCB real estate savings and are
considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer
a forward current of 1 A with a repetitive peak reverse voltage of 60 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard
pick and place equipment and their flat configuration minimizes roll away.
Tin Plated
Connectors
FRP Substrate
and Epoxy
Underfill
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Min.
Nom.
Max.
Unit
DC Blocking Voltage
VDC
60
V
RMS Voltage
VRMS
42
V
Repetitive Peak Reverse Voltage
VRRM
60
V
Average Forward Rectified Current1
I(AV)
1.0
A
Instantaneous Forward Voltage @ IF = 1.0 A
VF
0.58
V
Reverse Leakage Current @ rated VDC
(@TJ = 25 °C)
IR
0.5
mA
Reverse Leakage Current @ rated VDC
(@TJ = 100 °C)
IR
10
mA
IFSM
50
A
Max.
Unit
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
(JEDEC Method)
0.52
Notes:
1 See Forward Derating Curve.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Thermal Resistance
Symbol
Min.
RθJA
RθJL
Junction Temperature Range
TJ
Storage Temperature Range
TSTG
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Nom.
75
17
-50
+25
°C/W
+125
°C
+150
°C
CD2010-B160 – Surface Mount Schottky Rectifier Diode
Product Dimensions
Recommended Footprint
This is a lead free product, packaged with FRP substrate and is
epoxy underfilled. The terminals are pure tin plated and are
solderable per MIL-STD-750, Method 2026. The package weighs
approximately 0.02 g. The package and dimensions are shown
below.
4.40 - 4.60
(0.173 - 0.181)
2.10 - 2.30
(0.083 - 0.091)
0.50
R
(0.020)
The device will mount onto existing JEDEC SOD-106 footprint.
How To Order
CD 2010 - B 1 60
Common Code
CD = Chip Diode
Package
2010
Model Series
B = Schottky Barrier Diode
Forward Current I(AV)
1=1A
Working Peak Reverse Voltage
60 = 60 VRWM
Typical Part Marking
0.75 - 1.15
(0.029 - 0.045)
0.75 - 1.15
(0.029 - 0.045)
CD2010-B160 ......................................................................
160
0.85 - 1.25
(0.033 - 0.049)
DIMENSIONS:
MM
(INCHES)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CD2010-B160 – Surface Mount Schottky Rectifier Diode
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
120
F
D2
W
B
D1 D
P
A
Trailer
.......
.......
End
C
Device
.......
.......
.......
.......
Leader
.......
.......
W1
Start
DIMENSIONS:
10 pitches (min.)
10 pitches (min.)
Direction of Feed
Item
Symbol
Carrier Width
A
Carrier Length
B
Carrier Depth
C
Sprocket Hole
d
Reel Outside Diameter
D
Reel Inner Diameter
D1
Feed Hole Diameter
D2
Sprocket Hole Position
E
Punch Hole Position
F
Punch Hole Pitch
P
Sprocket Hole Pitch
P0
Embossment Center
P1
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
Quantity per Reel
—
2010
2.80 ±0.10
(0.110 ±0.004)
5.00 ±0.10
(0.197 ±0.004)
1.55 ±0.10
(0.061 ±0.004)
1.55 ±0.05
(0.061 ±0.002)
178
(7.008)
80.0
Min.
(3.150)
13.0 ±0.20
(0.512 ±0.008)
1.75 ±0.10
(0.069 ±0.004)
3.50 ±0.05
(0.138 ±0.002)
4.00 ±0.10
(0.157 ±0.004)
4.00 ±0.10
(0.157 ±0.004)
2.00 ±0.05
(0.079 ±0.002)
0.20 ±0.10
(0.008 ±0.004)
8.00 ±0.20
(0.315 ±0.008)
13.5
Max.
(0.531)
2,500
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MM
(INCHES)
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
CD2010-B160 – Surface Mount Schottky Rectifier Diode
Performance Graphs
Maximum Non-Repetitive Surge Current
Forward Current Derating Curve
Peak Forward Surge Current (Amps)
Average Forward Current (Amps)
1.0
0.5
Resistive or Inductive Load
P.C.B. Mounted on
0.2 x 0.2 ˝ (5.0 x 5.0 mm)
Copper Pad Areas
0
0
50
70
90
110
130
150
170
60
50
40
30
20
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
10
0
1
10
Lead Temperature (°C)
Typical Forward Characteristics
Typical Reverse Characteristics
100.0
Instantaneous Reverse Leakage Current (mA)
10.0
Instantaneous Forward Current (Amps)
100
Number of Cycles at 60 Hz
1.0
0.1
0.01
10.0
TJ = 100 °C
1.0
0.10
0.01
TJ = 25 °C
0.001
0.001
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (Volts)
Typical Junction Capacitance
Junction Capacitance (pF)
400
Reliable Electronic Solutions
Asia-Pacific:
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
Europe:
Tel: +41-41 768 5555 • Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVP-P
COPYRIGHT© 2005, BOURNS, INC. LITHO IN U.S.A., IPA0508 10/05
10
0.1
1.0
10
Reverse Voltage (Volts)
100
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.