cd214b b120 b160

PL
IA
N
T
Features
CO
M
■ RoHS compliant*
■ For use in low voltage high frequency
inverters, free wheeling and polarity
protection applications
*R
oH
S
■ Reverse voltage from 20 to 60 V
■ Forward current of 1 A
■ High current capability
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AA (SMB) size format, which offer
PCB real estate savings and are considerably smaller than most competitive parts. The Schottky Rectifier Diodes offer a forward current of
1 A with a choice of repetitive peak reverse voltage of 20 V up to 60 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Symbol
Maximum Repetitive
Peak Reverse Voltage
Maximum RMS Voltage
CD214B-
Unit
B120
B130
B140
B150
B160
VRRM
20
30
40
50
60
V
VRMS
14
21
28
35
42
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
V
Maximum Average Forward
Rectified Current1
I(AV)
1
A
DC Reverse Current @ Rated DC Blocking
Voltage (@TA = 25 °C)
IR
0.5
mA
DC Reverse Current @ Rated DC Blocking
Voltage (@TA = 100 °C)
IR
10
mA
Typical Junction Capacitance
CJ
110
pF
2
Maximum Instantaneous
Forward Voltage @ 1 A
Typical Thermal Resistance
VF
3
Peak forward surge current 8.3 ms single
half sine-wave superimposed on rated load
(JEDEC Method)
0.5
0.7
V
RθJA
22
°C/W
IFSM
30
A
Notes:
1 See Forward Derating Curve.
2 Measured at 1 MHz and an applied reverse voltage of 4.0 V.
3 Thermal resistance from junction to ambient and from junction to lead P.C.B. mounted on 0.2 x 0.2 ˝ (5.0 x 5.0 mm) copper pad areas.
Thermal Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature Range
Storage Temperature Range
Symbol
TJ
TSTG
CD214BB120
B130
B140
-55 to +125
B150
B160
-55 to +150
-55 to +150
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Unit
°C
°C
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
Product Dimensions
Recommended Pad Layout
A
A
B
B
C
DIMENSIONS:
G
F
H
MM
(INCHES)
Dimension
SMA (DO-214AC)
A
2.90
(0.114)
B
3.00
(0.118)
C
2.30
(0.091)
D
E
Dimension
A
B
C
D
E
F
G
H
SMB (DO-214AA)
4.06 - 4.57
(0.160 - 0.180)
3.30 - 3.94
(0.130 - 0.155)
1.96 - 2.21
(0.078 - 0.087)
0.15 - 0.31
(0.006 - 0.112)
5.21 - 5.59
(0.205 - 0.220)
0.05 - 0.20
(0.002 - 0.008)
2.01 - 2.62
(0.080 - 0.103)
0.76 - 1.52
(0.030 - 0.060)
C
Physical Specifications
Case ........................................................................... Molded plastic
Polarity ...................................................Indicated by cathode band
Weight ...................................................0.003 ounces / 0.093 grams
Typical Part Marking
CD214B-B120 ......................................................................
120B
CD214B-B130 ......................................................................
130B
CD214B-B140 ......................................................................
140B
CD214B-B150 ......................................................................
150B
CD214B-B160 ......................................................................
160B
How To Order
MM
DIMENSIONS:
(INCHES)
CD 214B - B 1 30 LF
Common Code
Chip Diode
Package
• 214B = SMB/DO-214AA
Model
B = Schottky Barrier Series
Average Forward Current (Io) Code
1 = 1 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
20 = 20 V
30 = 30 V
40 = 40 V
50 = 50 V
60 = 60 V
Terminations
LF = 100 % Sn (RoHS Compliant)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves
Forward Current Derating Curve
Maximum Non-Repetitive Surge Current
Peak Forward Surge Current (Amps)
Average Forward Current (Amps)
1.00
0.75
0.50
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.00
20
40
60
80
100
120
30
20
10
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
0
140
1
2
Lead Temperature (°C)
Typical Forward Characteristics
10
20
100
1000
B120 to B140
1.0
Capacitance (pF)
Ta = 25 °C
Pulsewidth: 300 µs
B150 to B160
0.1
100
F = 1 MHz
TJ = 25 °C
.01
0
0.4
0.2
0.6
0.8
1.0
0
0.1
Instantaneous Forward Voltage (Volts)
1.0
4.0
100
10
Ta = 125 °C
1.0
Ta = 100 °C
0.1
0.01
Ta = 25 °C
0.001
0
20
40
60
10.0
Reverse Voltage (Volts)
Typical Reverse Characteristics
Instantaneous Reverse Current (mA)
50
Typical Junction Capacitance
10
Instantaneous Forward Current (Amps)
5
Number of Cycles at 60 Hz
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
100
CD214B-B120 ~ B160 Schottky Barrier Rectifier Chip Diode
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
120 °
F
D2
W
B
D1 D
P
A
Trailer
End
C
Device
Leader
....... .......
....... .......
.......
....... ....... .......
W1
Start
DIMENSIONS:
10 pitches (min.)
10 pitches (min.)
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
Direction of Feed
Item
MM
(INCHES)
Symbol
Carrier Width
A
Carrier Length
B
Carrier Depth
C
Sprocket Hole
d
Reel Outside Diameter
D
Reel Inner Diameter
D1
Feed Hole Diameter
D2
Sprocket Hole Position
E
Punch Hole Position
F
Punch Hole Pitch
P
Sprocket Hole Pitch
P0
Embossment Center
P1
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
SMB (DO-214AA)
4.94 ± 0.10
(0.194 ± 0.004)
5.57 ± 0.10
(0.219 ± 0.004)
2.36 ± 0.10
(0.093 ± 0.004)
1.55 ± 0.05
(0.061 ± 0.002)
330
(12.992)
50.0
MIN.
(1.969)
13.0 ± 0.20
(0.512 ± 0.008)
1.75 ± 0.10
(0.069 ± 0.004))
5.50 ± 0.05
(0.217 ± 0.002)
4.00 ± 0.10
(0.157 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
2.00 ± 0.05
(0.079 ± 0.002)
0.30 ± 0.10
(0.012 ± 0.004)
12.00 ± 0.20
(0.472 ± 0.008)
18.4
MAX.
(0.724)
Quantity per Reel
--
3,000
REV. 09/15
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Similar pages