CD214C B320 B360

PL
IA
N
T
Features
M
■ RoHS compliant*
*R
oH
S
CO
■ SMC package
■ Surface mount
■ High current capability
CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop increasingly
smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AB (SMC) size format, which offer PCB
real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward current of 3 A with a
choice of repetitive peak reverse voltage of 20 V up to 60 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and their flat configuration
minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
CD214C-
Symbol
Unit
B320
B330
B340
B350
B360
0.5
0.5
0.5
0.7
0.7
Forward Voltage (Max.)
(If = 3 A)
VF
Typical Junction
Capacitance*
CT
250
pF
Reverse Current (Max.)
at Rated VR)
IR
0.5
mA
V
* Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Repetitive Peak
Reverse Voltage
Reverse Voltage
Maximum RMS Voltage
Avg. Forward Current
Forward Current,
Surge Peak
(60 Hz, 1 cycle)
Typical Thermal
Resistance**
Storage Temperature
Junction Temperature
CD214C-
Symbol
Unit
B320
B330
B340
B350
B360
VRRM
20
30
40
50
60
V
VR
VRMS
IO
20
30
40
50
60
V
14
21
28
35
42
V
3
A
Isurge
100
A
RΘJL
10
°C/W
TSTG
TJ
-55 to +150
°C
-55 to +125
°C
** Thermal resistance junction to lead.
How to Order
CD 214C - B 3 30 LF
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast
2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Common Code
CD = Chip Diode
Package
214C = SMC/DO-214AB
Model
B = Schottky Barrier Series
Average Forward Current (IO) Code
3 = 3 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
20 = 20 V
40 = 40 V
60 = 60 V
30 = 30 V
50 = 50 V
Terminations
LF = 100 % Sn (RoHS Compliant)
CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
Product Dimensions
Recommended Pad Layout
A
A
B
B
C
C
G
F
H
Dimension
SMC (DO-214AB)
A
7.90
(0.311)
B
4.00
(0.157)
C
2.30
(0.091)
D
E
Dimension
SMC (DO-214AB)
A
6.60 - 7.11
(0.260 - 0.280)
B
5.59 - 6.22
(0.220 - 0.245)
C
2.92 - 3.18
(0.115 - 0.125)
D
0.15 - 0.31
().006 - 0.112)
E
7.75 - 8.13
(0.305 - 0.320)
F
0.05 - 0.20
(0.002 - 0.008)
G
2.01 - 2.62
(0.080 - 0.103)
H
0.76 - 1.52
(0.030 - 0.060)
DIMENSIONS:
MM
(INCHES)
DIMENSIONS:
MM
(INCHES)
Physical Specifications
Case ........................................................................... Molded plastic
Polarity.....................................................Indicated by cathode band
Weight .................................................... 0.007 ounces / 0.21 grams
Typical Part Marking
MANUFACTURER'S
TRADEMARK
DATE CODE:
YEAR = Y
Week = WW
YWW
B3XX
DEVICE CODE
EXAMPLE:
304
DATE CODE = 4TH WEEK OF 2013
B340
DEVICE CODE = CD214C-B340
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves
Forward Current Derating Curve
Maximum Non-Repetitive Surge Current
Peak Forward Surge Current (Amps)
Average Forward Current (Amps)
5.0
4.0
3.0
2.0
1.0
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
0.0
25
50
75
100
150
125
120
100
175
80
60
40
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
20
0
1
2
5
Lead Temperature (°C)
Typical Forward Characteristics
20
50
100
Typical Junction Capacitance
1000
10
Ta = 25 °C
Pulsewidth: 300 µs
B320 to B340
1.0
Capacitance (pF)
Instantaneous Forward Current (Amps)
10
Number of Cycles at 60 Hz
B350 to B360
0.1
100
F = 1 MHz
Ta = 25 °C
0
.01
0
0.4
0.2
0.6
0.8
1.0
Instantaneous Forward Voltage (Volts)
0.1
1.0
4.0
10.0
100
Reverse Voltage (Volts)
Typical Reverse Characteristics
100
Instantaneous Reverse Current (mA)
10
Ta = 125 °C
Ta = 100 °C
1.0
0.1
0.01
Ta = 25 °C
0.001
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214C-B320 ~ B360 Schottky Barrier Rectifier Chip Diode
Packaging Information
The product will be dispensed in Tape and Reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
120 °
F
D2
W
B
D1 D
P
A
Trailer
End
C
Device
Leader
....... .......
....... .......
.......
....... ....... .......
W1
Start
DIMENSIONS:
10 pitches (min.)
10 pitches (min.)
Devices are packed in accordance with EIA standard
RS-481-A and specifications shown here.
Direction of Feed
Item
MM
(INCHES)
Symbol
Overall Tape Thickness
T
Tape Width
W
Reel Width
W1
SMC (DO-214AB)
7.22 ± 0.10
(0.284 - 0.004)
8.11 ± 0.10
(0.319 - 0.004)
2.36 ± 0.10
(0.093 - 0.004)
1.55 ± 0.05
(0.061 - 0.002)
330
(12.992)
50.0
MIN.
(1.969)
13.0 ± 0.20
(0.512 - 0.008)
1.75 ± 0.10
(0.069 - 0.004))
7.50 ± 0.10
(0.295 - 0.004)
4.00 ± 0.10
(0.157 - 0.004)
4.00 ± 0.10
(0.157 - 0.004)
2.00 ± 0.10
(0.079 - 0.004)
0.30 ± 0.10
(0.012 - 0.004)
16.00 ± 0.20
(0.630 - 0.008)
22.4
MAX.
(0.882)
--
3,000
Carrier Width
A
Carrier Length
B
Carrier Depth
C
Sprocket Hole
d
Reel Outside Diameter
D
Reel Inner Diameter
D1
Feed Hole Diameter
D2
Sprocket Hole Position
E
Punch Hole Position
F
Punch Hole Pitch
P
Sprocket Hole Pitch
P0
Embossment Center
P1
Quantity per Reel
REV. 09/15
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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