Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Complementary to 2SD2457 Unit: mm 45° ■ Absolute Maximum Ratings * 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 4.0–0.20 ● 2.6±0.1 ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 0.5±0.08 1.5±0.1 (Ta=25˚C) 0.4±0.04 3.0±0.15 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –40 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A Base current IB – 0.6 A Collector power dissipation PC* 1 W Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : 1X Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion ■ Electrical Characteristics (Ta=25˚C) Parameter Symbol ICBO Collector cutoff current max Unit VCB = –20V, IE = 0 Conditions min typ –1 µA ICEO VCE = –12V, IB = 0 –100 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –100 µA Collector to base voltage VCBO IC = –1mA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –10mA, IB = 0 –40 V VCE = –5V, IC = –1A 50 * Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) IC = –1.5A, IB = –0.15A Base to emitter saturation voltage VBE(sat) IC = –2A, IB = –0.2A Transition frequency fT VCB = –5V, IE = 0.5A, f = 200MHz 150 MHz Collector output capacitance Cob VCB = –5V, IE = 0, f = 1MHz 70 pF *h FE 220 – 0.4 –1 –1.5 V V Rank classification Rank P Q R hFE 50 ~ 100 80 ~ 160 100 ~ 220 1 Transistor 2SB1599 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 1.0 0.8 0.6 0.4 0.2 VCE(sat) — IC TC=25˚C IB=–40mA –3.5 –35mA Collector current IC (A) Collector power dissipation PC (W) IC — VCE –4.0 –3.0 –30mA –2.5 –25mA –2.0 –20mA –1.5 –15mA –10mA 20 40 60 –5mA 80 100 120 140 160 –1 Ta=100˚C 25˚C –25˚C – 0.03 0 Ambient temperature Ta (˚C) –3 – 0.1 –1.0 0 0 IC/IB=10 –10 – 0.3 – 0.5 0 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 –2 –4 –6 –8 –10 – 0.01 – 0.01 – 0.03 Collector to emitter voltage VCE (V) VBE(sat) — IC – 0.1 – 0.3 hFE — IC Ta=–25˚C 100˚C – 0.3 – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 30 10 3 Collector current IC (A) Cob — VCB –1 IE=0 f=1MHz Ta=25˚C 120 90 60 30 –3 –10 160 120 80 40 0 0.01 0.03 –3 –30 –100 0.1 0.3 1 3 10 Emitter current IE (A) VCER — RBE Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) – 0.3 ICEO — Ta –80 Collector to base voltage VCB (V) 2 – 0.1 200 Collector current IC (A) 150 0 –1 –25˚C 100 1 – 0.01 – 0.03 –3 25˚C Ta=25˚C 1000 VCE=–12V –70 300 –60 –50 2SA699A –40 –30 ICEO (Ta) ICEO (Ta=25˚C) 25˚C –1 TC=100˚C 300 Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –3 VCB=–5V f=50MHz Ta=25˚C VCE=–5V 1000 –3 fT — I E 240 IC/IB=10 –10 –1 Collector current IC (A) 100 30 10 2SA699 –20 3 –10 0 0.001 1 0.01 0.1 1 10 Base to emitter resistance RBE (kΩ) 0 20 40 60 80 100 120 Ambient temperature Ta (˚C)