BGB741L7ESD Data Sheet (1.2 MB, EN)

BGB741L7ESD
Robust Low Noise Broadband RF Amplifier MMIC
Data Sheet
Revision 2.0, 2012-09-10
RF & Protection Devices
Edition 2012-09-10
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
BGB741L7ESD
BGB741L7ESD, ESD-Robust and Easy-To-Use Broadband LNA MMIC
Revision History: 2012-09-10, Rev. 2.0
Page
Subjects (major changes since last revision)
This datasheet replaces the version from 2009-04-17. Neither the wafer production nor the
package assembly have been changed. Only the product description and information available
in the datasheet has been expanded and adjusted to the typical production.
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,
CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,
ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,
POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,
ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,
thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2011-11-11
Data Sheet
3
Revision 2.0, 2012-09-10
BGB741L7ESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
6
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
7
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
8
8.1
8.2
8.3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics Under Varying Bias Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Data Sheet
4
12
12
13
15
Revision 2.0, 2012-09-10
BGB741L7ESD
List of Figures
List of Figures
Figure 3-1
Figure 4-1
Figure 7-1
Figure 8-1
Figure 8-2
Figure 8-3
Figure 8-4
Figure 8-5
Figure 9-1
Figure 9-2
Figure 9-3
Figure 9-4
Data Sheet
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Functional Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Maximum Total Power Dissipation Ptot as Function of Temperature TS at Soldering point . . . . . . 11
ICC as a Function of Rext, VCtrl = 3 V, VCC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
ICC as a Function of VCC, VCtrl = 3 V, Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
ICC as a Function of VCtrl, VCC = 3 V, Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
ICC as a Function of Temperature, VCC = 3 V, VCtrl = 3 V, Rext = open . . . . . . . . . . . . . . . . . . . . . . 14
Testing Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Package Outline of TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Foot Print of TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Marking Layout of TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Tape of TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5
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BGB741L7ESD
List of Tables
List of Tables
Table 3-1
Table 5-1
Table 6-1
Table 7-1
Table 8-1
Table 8-2
Table 8-3
Table 8-4
Table 8-5
Table 8-6
Table 8-7
Table 8-8
Table 8-9
Data Sheet
Pinning Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Maximum Ratings at TA = 25°C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DC characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VC = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VC = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VC = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VC = 3 V, f = 1500 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AC Characteristics, VC = 3 V, f = 1900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AC Characteristics, VC = 3 V, f = 2400 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
AC Characteristics, VC = 3 V, f = 3500 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
AC Characteristics, VC = 3 V, f = 5500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6
Revision 2.0, 2012-09-10
BGB741L7ESD
Product Brief
1
Product Brief
The BGB741L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s reliable high
volume silicon germanium carbon (SiGe:C) bipolar technology. Its integrated feedback provides a broadband prematch to 50 Ω at input and output up to 3.5 GHz and improves the stability against parasitic oscillations. These
measures simplify the design of arbitrary LNA application circuits. The integrated active biasing reduces the
external parts count and stabilizes the bias current against temperature- and process-variations. The integrated
protection elements make the device robust against electrostatic discharge (ESD) and high RF input power levels.
The device is highly flexible because the bias current is adjustable and the device works with a broad supply
voltage range. The BGB741L7ESD comes in a Pb-free and halogen-free low profile TSLP-7-1 package.
2
•
•
•
•
•
•
•
•
•
Features
High-performance broadband LNA MMIC for applications
between 50 MHz and 5 GHz
Integrated ESD protection: 2 kV HBM at all pins
High RF input power robustness of 20 dBm
Supply voltage range VCC = 1.8 - 4.0 V
Adjustable current between 5.5 mA to 30 mA by an external
resistor
Power-off function
Excellent noise figure for a broadband LNA:
NF50 = 1.15 dB at 6 mA, 3 V, 2.4 GHz
Very small, leadless, Pb-free (RoHS compliant) and halogen-free
package TSLP-7-1, 2.0 x 1.3 x 0.4 mm
Qualification report according to AEC-Q101 available
TSLP-7-1
Applications
Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN
Data Sheet
7
Revision 2.0, 2012-09-10
BGB741L7ESD
Pin Configuration
3
Pin Configuration
Type
Package
Marking
BGB741L7ESD
TSLP-7-1
AY
Figure 3-1 Pin Configuration
Table 3-1
Pinning Table
Pin
Function
1
VCC
2
Bias-Out
3
RF-In
4
RF-Out
5
Control On/Off
6
Current Adjust
7
GND
Data Sheet
8
Revision 2.0, 2012-09-10
BGB741L7ESD
Application Circuit
4
Application Circuit
The following diagram shows the principal schematic how the BGB741L7ESD is used in a circuit. The power
On/Off function is used by applying VCtrl. By applying an external resistor Rext the pre-set minimum current of
5.5mA (which is adjusted by the integrated biasing when Rext is omitted) can be increased. Base- and collector
voltages are applied to the respective RFin- and RFout-pins by external inductors.
DC,
VCC
Rext
1
6
internal
Biasing
VCC
2
Current Adjust
5
LB Bias-Out
In
On/Off
3
Cin
LC
Out
4
RF-In
RF-Out
GND
7
DC,
V ctrl
Cout
(on package backside )
BGB741L7ESD functional block
Figure 4-1 Functional Block Diagram
5
Operating Conditions
Table 5-1
Operation Conditions
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
1.8
3.0
4.0
Voltage Control On/Off pin in On mode VCtrl-on
1.2
–
VCC
Voltage Control On/Off pin in Off mode VCtrl-off
-0.3
–
0.3
Supply voltage
Data Sheet
VCC
9
Note /
Test Condition
V
V
Revision 2.0, 2012-09-10
BGB741L7ESD
Maximum Ratings
6
Maximum Ratings
Table 6-1
Maximum Ratings at TA = 25°C (unless otherwise specified)
Parameter
Symbol
Value
Unit
Supply voltage
TA = -55°C
VCC
4.0
3.5
V
Supply current at VCC pin
ICC
30
mA
DC current at RF In pin
IB
3
mA
Voltage at Control On / Off pin
VCtrl
VCC
ESD stress pulse (HBM)
VESD
+/-2
kV
RF input power
PRF,in
20
dBm
Ptot
120
mW
Junction temperature
TJ
150
°C
Storage temperature
TStg
-55...150
°C
Total power dissipation
TS<117°C
1)
1)
The soldering point temperature TS measured at the GND pin (7) at the soldering point to the pcb
Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent
damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened.
Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at
others than standard operating conditions
Attention: ESD (Electrostatic Discharge) sensitive device, observe handling precautions.
Data Sheet
10
Revision 2.0, 2012-09-10
BGB741L7ESD
Thermal Characteristics
7
Thermal Characteristics
Table 7-1
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
Junction - soldering point
RthJS
275
K/W
1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
140
120
Ptot [mW]
100
80
60
40
20
0
0
50
100
150
Ts [°C]
Figure 7-1 Maximum Total Power Dissipation Ptot as Function of Temperature TS at Soldering point
Data Sheet
11
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
8
Electrical Characteristics
8.1
DC Characteristics
Table 8-1
DC characteristics at TA = 25 °C
Parameter
Supply current in On-mode
Symbol
ICC
Values
Min.
Typ.
Max.
5.0
–
–
5.5
6
10
6.5
–
–
Unit
Note /
Test Condition
mA
Rext = open
Rext = 30 kΩ
Rext = 3 kΩ
VCC = 3.0 V
VCtrl = 3.0 V
(Small signal
operation)
ICC-off
–
–
6.0
μA
VCC = 3.0 V
VCtrl = 0 V
Current into Control On/Off pin in On- ICtrl-on
mode
–
14
20
μA
VCC = 3.0 V
VCtrl = 3.0 V
Current into Control On/Off pin in Off- ICtrl-off
mode
–
–
0.1
μA
VCC = 3.0 V
VCtrl = 0 V
Supply current in Off mode
Data Sheet
12
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
8.2
DC Characteristics Under Varying Bias Conditions
The measurement setup is an application circuit according to Figure 4-1 “Functional Block Diagram” on Page 9
using the integrated biasing.
TA = 25 °C unless otherwise specified.
Figure 8-1 ICC as a Function of Rext, VCtrl = 3 V, VCC as Parameter
Figure 8-2 ICC as a Function of VCC, VCtrl = 3 V, Rext as Parameter
Data Sheet
13
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
Figure 8-3 ICC as a Function of VCtrl, VCC = 3 V, Rext as Parameter
Figure 8-4 ICC as a Function of Temperature, VCC = 3 V, VCtrl = 3 V, Rext = open
Data Sheet
14
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
8.3
AC Characteristics
The measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
Top View
VB
1
VCC
2
BiasOut
GND
Current
Adjust
6
On/Off
Control
5
VC
Bias-T
Bias-T
In
3
RF-In
Out
RF-Out
4
7
Figure 8-5 Testing Setup
Table 8-2
AC Characteristics, VC = 3 V, f = 150 MHz
Parameter
Symbol
1)
Minimum Noise Figure
Noise Figure in 50Ω System1)
Values
Min.
Typ.
Max.
–
–
1.05
0.95
–
–
–
–
1.1
1.05
–
–
–
–
19
21
–
–
–
–
20
21.5
–
–
NFmin
NF50
Transducer Gain
|S21|²
Maximum Stable Power Gain
Gms
Unit
Note /
Test Condition
dB
ZS = ZSopt
IC = 6 mA
IC = 10 mA
dB
ZS = ZL= 50Ω
IC = 6 mA
IC = 10 mA
dB
IC = 6 mA
IC = 10 mA
dB
ZL = ZLopt, ZS = ZSopt
IC = 6 mA
IC = 10 mA
Input 1 dB Gain Compression Point2)
IP1dB
–
–
-5.5
-8
–
–
dBm
ICq = 6 mA
ICq = 10 mA
Input 3rd Order Intercept Point
IIP3
–
–
5.5
3.5
–
–
dBm
IC = 6 mA
IC = 10 mA
Input Return Loss
RLin
–
–
14
18
–
–
dB
IC = 6 mA
IC = 10 mA
Output Return Loss
RLout
–
–
12.5
18.5
–
–
dB
IC = 6 mA
IC = 10 mA
Data Sheet
15
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
Table 8-3
AC Characteristics, VC = 3 V, f = 450 MHz
Parameter
Symbol
1)
Minimum Noise Figure
Noise Figure in 50Ω System1)
Values
Min.
Typ.
Max.
–
–
1.05
0.95
–
–
–
–
1.1
1.05
–
–
–
–
18.5
20.5
–
–
–
–
19
20.5
–
–
NFmin
NF50
Transducer Gain
|S21|²
Maximum Available Power Gain
Gma
Unit
Note /
Test Condition
dB
ZS = ZSopt
IC = 6 mA
IC = 10 mA
dB
ZS = ZL= 50Ω
IC = 6 mA
IC = 10 mA
dB
IC = 6 mA
IC = 10 mA
dB
ZL = ZLopt, ZS = ZSopt
IC = 6 mA
IC = 10 mA
Input 1 dB Gain Compression Point2)
IP1dB
–
–
-5
-7.5
–
–
dBm
ICq = 6 mA
ICq = 10 mA
Input 3rd Order Intercept Point
IIP3
–
–
4
2.5
–
–
dBm
IC = 6 mA
IC = 10 mA
Input Return Loss
RLin
–
–
15.5
21
–
–
dB
IC = 6 mA
IC = 10 mA
Output Return Loss
RLout
–
–
14.5
28
–
–
dB
IC = 6 mA
IC = 10 mA
Unit
Note /
Test Condition
dB
ZS = ZSopt
IC = 6 mA
IC = 10 mA
dB
ZS = ZL= 50Ω
IC = 6 mA
IC = 10 mA
dB
IC = 6 mA
IC = 10 mA
dB
ZL = ZLopt, ZS = ZSopt
IC = 6 mA
IC = 10 mA
Table 8-4
AC Characteristics, VC = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
1)
Minimum Noise Figure
Noise Figure in 50Ω System1)
Typ.
Max.
NFmin
–
–
1.05
0.95
–
–
–
–
1.1
1.05
–
–
–
–
18.5
20
–
–
–
–
19
20.5
–
–
NF50
Transducer Gain
|S21|²
Maximum Available Power Gain
Gma
Input 1 dB Gain Compression Point2)
IP1dB
–
–
-5
-7
–
–
dBm
ICq = 6 mA
ICq = 10 mA
Input 3rd Order Intercept Point
IIP3
–
–
3
1.5
–
–
dBm
IC = 6 mA
IC = 10 mA
Data Sheet
16
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
Table 8-4
AC Characteristics, VC = 3 V, f = 900 MHz (cont’d)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Input Return Loss
RLin
–
–
15.5
19
–
–
dB
IC = 6 mA
IC = 10 mA
Output Return Loss
RLout
–
–
14.5
28.5
–
–
dB
IC = 6 mA
IC = 10 mA
Unit
Note /
Test Condition
dB
ZS = ZSopt
IC = 6 mA
IC = 10 mA
dB
ZS = ZL= 50Ω
IC = 6 mA
IC = 10 mA
dB
IC = 6 mA
IC = 10 mA
dB
ZL = ZLopt, ZS = ZSopt
IC = 6 mA
IC = 10 mA
Table 8-5
AC Characteristics, VC = 3 V, f = 1500 MHz
Parameter
Symbol
1)
Minimum Noise Figure
Noise Figure in 50Ω System1)
Values
Min.
Typ.
Max.
–
–
1.05
1.0
–
–
–
–
1.1
1.05
–
–
–
–
18
19.5
–
–
–
–
18.5
20
–
–
NFmin
NF50
Transducer Gain
|S21|²
Maximum Available Power Gain
Gma
Input 1 dB Gain Compression Point2)
IP1dB
–
–
-4.5
-6.5
–
–
dBm
ICq = 6 mA
ICq = 10 mA
Input 3rd Order Intercept Point
IIP3
–
–
2.5
1
–
–
dBm
IC = 6 mA
IC = 10 mA
Input Return Loss
RLin
–
–
14.5
16
–
–
dB
IC = 6 mA
IC = 10 mA
Output Return Loss
RLout
–
–
14
23
–
–
dB
IC = 6 mA
IC = 10 mA
Unit
Note /
Test Condition
dB
ZS = ZSopt
IC = 6 mA
IC = 10 mA
dB
ZS = ZL= 50Ω
IC = 6 mA
IC = 10 mA
dB
IC = 6 mA
IC = 10 mA
Table 8-6
AC Characteristics, VC = 3 V, f = 1900 MHz
Parameter
Symbol
Values
Min.
1)
Minimum Noise Figure
Noise Figure in 50Ω System1)
Transducer Gain
Data Sheet
Typ.
Max.
NFmin
–
–
1.05
1.05
–
–
–
–
1.15
1.1
–
–
–
–
17.5
19
–
–
NF50
|S21|²
17
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
Table 8-6
AC Characteristics, VC = 3 V, f = 1900 MHz (cont’d)
Parameter
Symbol
Maximum Available Power Gain
Values
Min.
Typ.
Max.
–
–
18
19.5
–
–
Gma
Unit
Note /
Test Condition
dB
ZL = ZLopt, ZS = ZSopt
IC = 6 mA
IC = 10 mA
Input 1 dB Gain Compression Point2)
IP1dB
–
–
-4
-6
–
–
dBm
ICq = 6 mA
ICq = 10 mA
Input 3rd Order Intercept Point
IIP3
–
–
2.5
1
–
–
dBm
IC = 6 mA
IC = 10 mA
Input Return Loss
RLin
–
–
13.5
15
–
–
dB
IC = 6 mA
IC = 10 mA
Output Return Loss
RLout
–
–
13.5
21
–
–
dB
IC = 6 mA
IC = 10 mA
Unit
Note /
Test Condition
dB
ZS = ZSopt
IC = 6 mA
IC = 10 mA
dB
ZS = ZL= 50Ω
IC = 6 mA
IC = 10 mA
dB
IC = 6 mA
IC = 10 mA
dB
ZL = ZLopt, ZS = ZSopt
IC = 6 mA
IC = 10 mA
Table 8-7
AC Characteristics, VC = 3 V, f = 2400 MHz
Parameter
Symbol
Values
Min.
1)
Minimum Noise Figure
Noise Figure in 50Ω System1)
Typ.
Max.
NFmin
–
–
1.1
1.05
–
–
–
–
1.15
1.1
–
–
–
–
17
18.5
–
–
–
–
17.5
19
–
–
NF50
Transducer Gain
|S21|²
Maximum Available Power Gain
Gma
Input 1 dB Gain Compression Point2)
IP1dB
–
–
-3.5
-5.5
–
–
dBm
ICq = 6 mA
ICq = 10 mA
Input 3rd Order Intercept Point
IIP3
–
–
3
1
–
–
dBm
IC = 6 mA
IC = 10 mA
Input Return Loss
RLin
–
–
12.5
13.5
–
–
dB
IC = 6 mA
IC = 10 mA
Output Return Loss
RLout
–
–
12.5
18
–
–
dB
IC = 6 mA
IC = 10 mA
Data Sheet
18
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
Table 8-8
AC Characteristics, VC = 3 V, f = 3500 MHz
Parameter
Symbol
1)
Minimum Noise Figure
Noise Figure in 50Ω System1)
Values
Min.
Typ.
Max.
–
–
1.25
1.2
–
–
–
–
1.35
1.25
–
–
–
–
15
16.5
–
–
–
–
16
17.5
–
–
NFmin
NF50
Transducer Gain
|S21|²
Maximum Available Power Gain
Gma
Unit
Note /
Test Condition
dB
ZS = ZSopt
IC = 6 mA
IC = 10 mA
dB
ZS = ZL= 50Ω
IC = 6 mA
IC = 10 mA
dB
IC = 6 mA
IC = 10 mA
dB
ZL = ZLopt, ZS = ZSopt
IC = 6 mA
IC = 10 mA
Input 1 dB Gain Compression Point2)
IP1dB
–
–
-2.5
-4.5
–
–
dBm
ICq = 6 mA
ICq = 10 mA
Input 3rd Order Intercept Point
IIP3
–
–
3.5
1.5
–
–
dBm
IC = 6 mA
IC = 10 mA
Input Return Loss
RLin
–
–
10
10.5
–
–
dB
IC = 6 mA
IC = 10 mA
Output Return Loss
RLout
–
–
10
13.5
–
–
dB
IC = 6 mA
IC = 10 mA
Unit
Note /
Test Condition
dB
ZS = ZSopt
IC = 6 mA
IC = 10 mA
dB
ZS = ZL= 50Ω
IC = 6 mA
IC = 10 mA
dB
IC = 6 mA
IC = 10 mA
dB
ZL = ZLopt, ZS = ZSopt
IC = 6 mA
IC = 10 mA
Table 8-9
AC Characteristics, VC = 3 V, f = 5500 MHz
Parameter
Symbol
Values
Min.
1)
Minimum Noise Figure
Noise Figure in 50Ω System1)
Typ.
Max.
NFmin
–
–
1.8
1.75
–
–
–
–
1.95
1.85
–
–
–
–
12
13
–
–
–
–
14
15
–
–
NF50
Transducer Gain
|S21|²
Maximum Available Power Gain
Gma
Input 1 dB Gain Compression Point2)
IP1dB
–
–
-1
-3
–
–
dBm
ICq = 6 mA
ICq = 10 mA
Input 3rd Order Intercept Point
IIP3
–
–
8.5
4
–
–
dBm
IC = 6 mA
IC = 10 mA
Data Sheet
19
Revision 2.0, 2012-09-10
BGB741L7ESD
Electrical Characteristics
Table 8-9
AC Characteristics, VC = 3 V, f = 5500 MHz (cont’d)
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Input Return Loss
RLin
–
–
7
8
–
–
dB
IC = 6 mA
IC = 10 mA
Output Return Loss
RLout
–
–
7
8.5
–
–
dB
IC = 6 mA
IC = 10 mA
1) Test fixture losses extracted
2) Measured on an application board according to Figure 4-1 “Functional Block Diagram” on Page 9 presenting a 50 Ω
system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power
level approaches P1dB.
Data Sheet
20
Revision 2.0, 2012-09-10
BGB741L7ESD
Package Information
Package Information
Top view
Bottom view
0.4
+0.1
1.3 ±0.05
0.05 MAX.
1 ±0.05
6
1.7 ±0.05
1.2 ±0.035 1)
7
3
Pin 1 marking
2 ±0.05
5
1.1 ±0.035 1)
4
6 x 0.2 ±0.035 1)
9
2
1
6 x 0.2 ±0.035 1)
1) Dimension applies to plated terminal
TSLP-7-1-PO V04
Figure 9-1 Package Outline of TSLP-7-1
NSMD
SMD
Solder mask
0.3
0.3
Stencil apertures
Copper
Solder mask
0.2
0.2
0.3
R0.1
0.2
0.2
0.25
0.25
1.9
0.2
0.25
1.9
1.9
0.25
0.3
Copper
0.25
0.2
0.2
0.25
0.2
0.2
0.3
0.2
0.2
1.9
0.3
1.4
0.2
1.4
0.2
1.4
0.2
1.4
0.25
0.25
R0.1
Stencil apertures
TSLP-7-1-FP V01
Figure 9-2 Foot Print of TSLP-7-1
Figure 9-3 Marking Layout of TSLP-7-1
0.5
8
2.18
4
Pin 1
marking
1.45
TSLP-7-1-TP V03
Figure 9-4 Tape of TSLP-7-1
Data Sheet
21
Revision 2.0, 2012-09-10
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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