BGB741L7ESD Robust Low Noise Broadband RF Amplifier MMIC Data Sheet Revision 2.0, 2012-09-10 RF & Protection Devices Edition 2012-09-10 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. BGB741L7ESD BGB741L7ESD, ESD-Robust and Easy-To-Use Broadband LNA MMIC Revision History: 2012-09-10, Rev. 2.0 Page Subjects (major changes since last revision) This datasheet replaces the version from 2009-04-17. Neither the wafer production nor the package assembly have been changed. Only the product description and information available in the datasheet has been expanded and adjusted to the typical production. Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2011-11-11 Data Sheet 3 Revision 2.0, 2012-09-10 BGB741L7ESD Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Application Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Operating Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 6 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 7 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 8 8.1 8.2 8.3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC Characteristics Under Varying Bias Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Data Sheet 4 12 12 13 15 Revision 2.0, 2012-09-10 BGB741L7ESD List of Figures List of Figures Figure 3-1 Figure 4-1 Figure 7-1 Figure 8-1 Figure 8-2 Figure 8-3 Figure 8-4 Figure 8-5 Figure 9-1 Figure 9-2 Figure 9-3 Figure 9-4 Data Sheet Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Functional Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Total Power Dissipation Ptot as Function of Temperature TS at Soldering point . . . . . . 11 ICC as a Function of Rext, VCtrl = 3 V, VCC as Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ICC as a Function of VCC, VCtrl = 3 V, Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 ICC as a Function of VCtrl, VCC = 3 V, Rext as Parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 ICC as a Function of Temperature, VCC = 3 V, VCtrl = 3 V, Rext = open . . . . . . . . . . . . . . . . . . . . . . 14 Testing Setup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Package Outline of TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Foot Print of TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Marking Layout of TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Tape of TSLP-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 5 Revision 2.0, 2012-09-10 BGB741L7ESD List of Tables List of Tables Table 3-1 Table 5-1 Table 6-1 Table 7-1 Table 8-1 Table 8-2 Table 8-3 Table 8-4 Table 8-5 Table 8-6 Table 8-7 Table 8-8 Table 8-9 Data Sheet Pinning Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Operation Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Maximum Ratings at TA = 25°C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 DC characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC Characteristics, VC = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 AC Characteristics, VC = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VC = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 AC Characteristics, VC = 3 V, f = 1500 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VC = 3 V, f = 1900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 AC Characteristics, VC = 3 V, f = 2400 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 AC Characteristics, VC = 3 V, f = 3500 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 AC Characteristics, VC = 3 V, f = 5500 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision 2.0, 2012-09-10 BGB741L7ESD Product Brief 1 Product Brief The BGB741L7ESD is a high performance low noise amplifier (LNA) MMIC based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) bipolar technology. Its integrated feedback provides a broadband prematch to 50 Ω at input and output up to 3.5 GHz and improves the stability against parasitic oscillations. These measures simplify the design of arbitrary LNA application circuits. The integrated active biasing reduces the external parts count and stabilizes the bias current against temperature- and process-variations. The integrated protection elements make the device robust against electrostatic discharge (ESD) and high RF input power levels. The device is highly flexible because the bias current is adjustable and the device works with a broad supply voltage range. The BGB741L7ESD comes in a Pb-free and halogen-free low profile TSLP-7-1 package. 2 • • • • • • • • • Features High-performance broadband LNA MMIC for applications between 50 MHz and 5 GHz Integrated ESD protection: 2 kV HBM at all pins High RF input power robustness of 20 dBm Supply voltage range VCC = 1.8 - 4.0 V Adjustable current between 5.5 mA to 30 mA by an external resistor Power-off function Excellent noise figure for a broadband LNA: NF50 = 1.15 dB at 6 mA, 3 V, 2.4 GHz Very small, leadless, Pb-free (RoHS compliant) and halogen-free package TSLP-7-1, 2.0 x 1.3 x 0.4 mm Qualification report according to AEC-Q101 available TSLP-7-1 Applications Mobile TV, DAB, RKE, AMR, Cellular, ZigBee, WiMAX, SDARs, WiFi, Cordless phone, UMTS, WLAN Data Sheet 7 Revision 2.0, 2012-09-10 BGB741L7ESD Pin Configuration 3 Pin Configuration Type Package Marking BGB741L7ESD TSLP-7-1 AY Figure 3-1 Pin Configuration Table 3-1 Pinning Table Pin Function 1 VCC 2 Bias-Out 3 RF-In 4 RF-Out 5 Control On/Off 6 Current Adjust 7 GND Data Sheet 8 Revision 2.0, 2012-09-10 BGB741L7ESD Application Circuit 4 Application Circuit The following diagram shows the principal schematic how the BGB741L7ESD is used in a circuit. The power On/Off function is used by applying VCtrl. By applying an external resistor Rext the pre-set minimum current of 5.5mA (which is adjusted by the integrated biasing when Rext is omitted) can be increased. Base- and collector voltages are applied to the respective RFin- and RFout-pins by external inductors. DC, VCC Rext 1 6 internal Biasing VCC 2 Current Adjust 5 LB Bias-Out In On/Off 3 Cin LC Out 4 RF-In RF-Out GND 7 DC, V ctrl Cout (on package backside ) BGB741L7ESD functional block Figure 4-1 Functional Block Diagram 5 Operating Conditions Table 5-1 Operation Conditions Parameter Symbol Values Unit Min. Typ. Max. 1.8 3.0 4.0 Voltage Control On/Off pin in On mode VCtrl-on 1.2 – VCC Voltage Control On/Off pin in Off mode VCtrl-off -0.3 – 0.3 Supply voltage Data Sheet VCC 9 Note / Test Condition V V Revision 2.0, 2012-09-10 BGB741L7ESD Maximum Ratings 6 Maximum Ratings Table 6-1 Maximum Ratings at TA = 25°C (unless otherwise specified) Parameter Symbol Value Unit Supply voltage TA = -55°C VCC 4.0 3.5 V Supply current at VCC pin ICC 30 mA DC current at RF In pin IB 3 mA Voltage at Control On / Off pin VCtrl VCC ESD stress pulse (HBM) VESD +/-2 kV RF input power PRF,in 20 dBm Ptot 120 mW Junction temperature TJ 150 °C Storage temperature TStg -55...150 °C Total power dissipation TS<117°C 1) 1) The soldering point temperature TS measured at the GND pin (7) at the soldering point to the pcb Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened. Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at others than standard operating conditions Attention: ESD (Electrostatic Discharge) sensitive device, observe handling precautions. Data Sheet 10 Revision 2.0, 2012-09-10 BGB741L7ESD Thermal Characteristics 7 Thermal Characteristics Table 7-1 Thermal Resistance Parameter Symbol Value Unit 1) Junction - soldering point RthJS 275 K/W 1) For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 140 120 Ptot [mW] 100 80 60 40 20 0 0 50 100 150 Ts [°C] Figure 7-1 Maximum Total Power Dissipation Ptot as Function of Temperature TS at Soldering point Data Sheet 11 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics 8 Electrical Characteristics 8.1 DC Characteristics Table 8-1 DC characteristics at TA = 25 °C Parameter Supply current in On-mode Symbol ICC Values Min. Typ. Max. 5.0 – – 5.5 6 10 6.5 – – Unit Note / Test Condition mA Rext = open Rext = 30 kΩ Rext = 3 kΩ VCC = 3.0 V VCtrl = 3.0 V (Small signal operation) ICC-off – – 6.0 μA VCC = 3.0 V VCtrl = 0 V Current into Control On/Off pin in On- ICtrl-on mode – 14 20 μA VCC = 3.0 V VCtrl = 3.0 V Current into Control On/Off pin in Off- ICtrl-off mode – – 0.1 μA VCC = 3.0 V VCtrl = 0 V Supply current in Off mode Data Sheet 12 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics 8.2 DC Characteristics Under Varying Bias Conditions The measurement setup is an application circuit according to Figure 4-1 “Functional Block Diagram” on Page 9 using the integrated biasing. TA = 25 °C unless otherwise specified. Figure 8-1 ICC as a Function of Rext, VCtrl = 3 V, VCC as Parameter Figure 8-2 ICC as a Function of VCC, VCtrl = 3 V, Rext as Parameter Data Sheet 13 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics Figure 8-3 ICC as a Function of VCtrl, VCC = 3 V, Rext as Parameter Figure 8-4 ICC as a Function of Temperature, VCC = 3 V, VCtrl = 3 V, Rext = open Data Sheet 14 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics 8.3 AC Characteristics The measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. Top View VB 1 VCC 2 BiasOut GND Current Adjust 6 On/Off Control 5 VC Bias-T Bias-T In 3 RF-In Out RF-Out 4 7 Figure 8-5 Testing Setup Table 8-2 AC Characteristics, VC = 3 V, f = 150 MHz Parameter Symbol 1) Minimum Noise Figure Noise Figure in 50Ω System1) Values Min. Typ. Max. – – 1.05 0.95 – – – – 1.1 1.05 – – – – 19 21 – – – – 20 21.5 – – NFmin NF50 Transducer Gain |S21|² Maximum Stable Power Gain Gms Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA dB ZS = ZL= 50Ω IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA dB ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA Input 1 dB Gain Compression Point2) IP1dB – – -5.5 -8 – – dBm ICq = 6 mA ICq = 10 mA Input 3rd Order Intercept Point IIP3 – – 5.5 3.5 – – dBm IC = 6 mA IC = 10 mA Input Return Loss RLin – – 14 18 – – dB IC = 6 mA IC = 10 mA Output Return Loss RLout – – 12.5 18.5 – – dB IC = 6 mA IC = 10 mA Data Sheet 15 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics Table 8-3 AC Characteristics, VC = 3 V, f = 450 MHz Parameter Symbol 1) Minimum Noise Figure Noise Figure in 50Ω System1) Values Min. Typ. Max. – – 1.05 0.95 – – – – 1.1 1.05 – – – – 18.5 20.5 – – – – 19 20.5 – – NFmin NF50 Transducer Gain |S21|² Maximum Available Power Gain Gma Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA dB ZS = ZL= 50Ω IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA dB ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA Input 1 dB Gain Compression Point2) IP1dB – – -5 -7.5 – – dBm ICq = 6 mA ICq = 10 mA Input 3rd Order Intercept Point IIP3 – – 4 2.5 – – dBm IC = 6 mA IC = 10 mA Input Return Loss RLin – – 15.5 21 – – dB IC = 6 mA IC = 10 mA Output Return Loss RLout – – 14.5 28 – – dB IC = 6 mA IC = 10 mA Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA dB ZS = ZL= 50Ω IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA dB ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA Table 8-4 AC Characteristics, VC = 3 V, f = 900 MHz Parameter Symbol Values Min. 1) Minimum Noise Figure Noise Figure in 50Ω System1) Typ. Max. NFmin – – 1.05 0.95 – – – – 1.1 1.05 – – – – 18.5 20 – – – – 19 20.5 – – NF50 Transducer Gain |S21|² Maximum Available Power Gain Gma Input 1 dB Gain Compression Point2) IP1dB – – -5 -7 – – dBm ICq = 6 mA ICq = 10 mA Input 3rd Order Intercept Point IIP3 – – 3 1.5 – – dBm IC = 6 mA IC = 10 mA Data Sheet 16 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics Table 8-4 AC Characteristics, VC = 3 V, f = 900 MHz (cont’d) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Input Return Loss RLin – – 15.5 19 – – dB IC = 6 mA IC = 10 mA Output Return Loss RLout – – 14.5 28.5 – – dB IC = 6 mA IC = 10 mA Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA dB ZS = ZL= 50Ω IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA dB ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA Table 8-5 AC Characteristics, VC = 3 V, f = 1500 MHz Parameter Symbol 1) Minimum Noise Figure Noise Figure in 50Ω System1) Values Min. Typ. Max. – – 1.05 1.0 – – – – 1.1 1.05 – – – – 18 19.5 – – – – 18.5 20 – – NFmin NF50 Transducer Gain |S21|² Maximum Available Power Gain Gma Input 1 dB Gain Compression Point2) IP1dB – – -4.5 -6.5 – – dBm ICq = 6 mA ICq = 10 mA Input 3rd Order Intercept Point IIP3 – – 2.5 1 – – dBm IC = 6 mA IC = 10 mA Input Return Loss RLin – – 14.5 16 – – dB IC = 6 mA IC = 10 mA Output Return Loss RLout – – 14 23 – – dB IC = 6 mA IC = 10 mA Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA dB ZS = ZL= 50Ω IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA Table 8-6 AC Characteristics, VC = 3 V, f = 1900 MHz Parameter Symbol Values Min. 1) Minimum Noise Figure Noise Figure in 50Ω System1) Transducer Gain Data Sheet Typ. Max. NFmin – – 1.05 1.05 – – – – 1.15 1.1 – – – – 17.5 19 – – NF50 |S21|² 17 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics Table 8-6 AC Characteristics, VC = 3 V, f = 1900 MHz (cont’d) Parameter Symbol Maximum Available Power Gain Values Min. Typ. Max. – – 18 19.5 – – Gma Unit Note / Test Condition dB ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA Input 1 dB Gain Compression Point2) IP1dB – – -4 -6 – – dBm ICq = 6 mA ICq = 10 mA Input 3rd Order Intercept Point IIP3 – – 2.5 1 – – dBm IC = 6 mA IC = 10 mA Input Return Loss RLin – – 13.5 15 – – dB IC = 6 mA IC = 10 mA Output Return Loss RLout – – 13.5 21 – – dB IC = 6 mA IC = 10 mA Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA dB ZS = ZL= 50Ω IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA dB ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA Table 8-7 AC Characteristics, VC = 3 V, f = 2400 MHz Parameter Symbol Values Min. 1) Minimum Noise Figure Noise Figure in 50Ω System1) Typ. Max. NFmin – – 1.1 1.05 – – – – 1.15 1.1 – – – – 17 18.5 – – – – 17.5 19 – – NF50 Transducer Gain |S21|² Maximum Available Power Gain Gma Input 1 dB Gain Compression Point2) IP1dB – – -3.5 -5.5 – – dBm ICq = 6 mA ICq = 10 mA Input 3rd Order Intercept Point IIP3 – – 3 1 – – dBm IC = 6 mA IC = 10 mA Input Return Loss RLin – – 12.5 13.5 – – dB IC = 6 mA IC = 10 mA Output Return Loss RLout – – 12.5 18 – – dB IC = 6 mA IC = 10 mA Data Sheet 18 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics Table 8-8 AC Characteristics, VC = 3 V, f = 3500 MHz Parameter Symbol 1) Minimum Noise Figure Noise Figure in 50Ω System1) Values Min. Typ. Max. – – 1.25 1.2 – – – – 1.35 1.25 – – – – 15 16.5 – – – – 16 17.5 – – NFmin NF50 Transducer Gain |S21|² Maximum Available Power Gain Gma Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA dB ZS = ZL= 50Ω IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA dB ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA Input 1 dB Gain Compression Point2) IP1dB – – -2.5 -4.5 – – dBm ICq = 6 mA ICq = 10 mA Input 3rd Order Intercept Point IIP3 – – 3.5 1.5 – – dBm IC = 6 mA IC = 10 mA Input Return Loss RLin – – 10 10.5 – – dB IC = 6 mA IC = 10 mA Output Return Loss RLout – – 10 13.5 – – dB IC = 6 mA IC = 10 mA Unit Note / Test Condition dB ZS = ZSopt IC = 6 mA IC = 10 mA dB ZS = ZL= 50Ω IC = 6 mA IC = 10 mA dB IC = 6 mA IC = 10 mA dB ZL = ZLopt, ZS = ZSopt IC = 6 mA IC = 10 mA Table 8-9 AC Characteristics, VC = 3 V, f = 5500 MHz Parameter Symbol Values Min. 1) Minimum Noise Figure Noise Figure in 50Ω System1) Typ. Max. NFmin – – 1.8 1.75 – – – – 1.95 1.85 – – – – 12 13 – – – – 14 15 – – NF50 Transducer Gain |S21|² Maximum Available Power Gain Gma Input 1 dB Gain Compression Point2) IP1dB – – -1 -3 – – dBm ICq = 6 mA ICq = 10 mA Input 3rd Order Intercept Point IIP3 – – 8.5 4 – – dBm IC = 6 mA IC = 10 mA Data Sheet 19 Revision 2.0, 2012-09-10 BGB741L7ESD Electrical Characteristics Table 8-9 AC Characteristics, VC = 3 V, f = 5500 MHz (cont’d) Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Input Return Loss RLin – – 7 8 – – dB IC = 6 mA IC = 10 mA Output Return Loss RLout – – 7 8.5 – – dB IC = 6 mA IC = 10 mA 1) Test fixture losses extracted 2) Measured on an application board according to Figure 4-1 “Functional Block Diagram” on Page 9 presenting a 50 Ω system to the device. ICq is the quiescent current, that is at small RF input power level. IC increases as RF input power level approaches P1dB. Data Sheet 20 Revision 2.0, 2012-09-10 BGB741L7ESD Package Information Package Information Top view Bottom view 0.4 +0.1 1.3 ±0.05 0.05 MAX. 1 ±0.05 6 1.7 ±0.05 1.2 ±0.035 1) 7 3 Pin 1 marking 2 ±0.05 5 1.1 ±0.035 1) 4 6 x 0.2 ±0.035 1) 9 2 1 6 x 0.2 ±0.035 1) 1) Dimension applies to plated terminal TSLP-7-1-PO V04 Figure 9-1 Package Outline of TSLP-7-1 NSMD SMD Solder mask 0.3 0.3 Stencil apertures Copper Solder mask 0.2 0.2 0.3 R0.1 0.2 0.2 0.25 0.25 1.9 0.2 0.25 1.9 1.9 0.25 0.3 Copper 0.25 0.2 0.2 0.25 0.2 0.2 0.3 0.2 0.2 1.9 0.3 1.4 0.2 1.4 0.2 1.4 0.2 1.4 0.25 0.25 R0.1 Stencil apertures TSLP-7-1-FP V01 Figure 9-2 Foot Print of TSLP-7-1 Figure 9-3 Marking Layout of TSLP-7-1 0.5 8 2.18 4 Pin 1 marking 1.45 TSLP-7-1-TP V03 Figure 9-4 Tape of TSLP-7-1 Data Sheet 21 Revision 2.0, 2012-09-10 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG