Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A Unit: mm 3.0±0.2 4.0±0.2 ■ Features Parameter (Ta=25˚C) Symbol Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 Ratings –30 VCBO –60 –25 VCEO emitter voltage 2SB1030A –50 Unit marking V 2 3 V 1.27 1.27 Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A Collector current IC – 0.5 A Collector power dissipation PC 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1 2.0±0.2 ■ Absolute Maximum Ratings 15.6±0.5 Optimum for high-density mounting. Allowing supply with the radial taping. 0.7±0.1 ● +0.2 0.45–0.1 ● 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –20V, IE = 0 – 0.1 µA ICEO VCE = –20V, IB = 0 –1 µA VCBO IC = –10µA, IE = 0 VCEO IC = –2mA, IB = 0 VEBO IE = –10µA, IC = 0 –7 hFE1*1 VCE = –10V, IC = –150mA*2 85 hFE2 VCE = –10V, IC = –500mA*2 40 Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA*2 Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz Collector cutoff current Collector to base 2SB1030 voltage 2SB1030A Collector to emitter 2SB1030 voltage 2SB1030A Emitter to base voltage Forward current transfer ratio –30 V –60 –25 V –50 V 340 – 0.35 200 FE1 V MHz 6 15 *2 *1h – 0.6 pF Pulse measurement Rank classification Rank Q R S hFE1 85 ~ 170 120 ~ 240 170 ~ 340 1 2SB1030, 2SB1030A Transistor PC — Ta IC — VCE –1000 400 350 –800 300 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –600 250 200 –400 150 100 –3mA –2mA –200 –1mA 50 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –10 –3 Ta=75˚C 25˚C –25˚C – 0.3 – 0.1 – 0.03 –1 –3 400 300 Ta=75˚C 200 25˚C –25˚C 100 –1 –3 –10 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 12 10 8 6 4 VCE=–10V Ta=25˚C Function=FLAT 200 Noise voltage NV (mV) 14 160 120 Rg=100kΩ 80 22kΩ 40 4.7kΩ 2 –30 –100 Collector to base voltage VCB (V) –3 –10 VCB=–10V Ta=25˚C 140 120 100 80 60 40 0 –10 –30 –100 –300 Collector current IC (µA) 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) NV — IC 240 16 –1 Collector current IC (A) 20 Cob — VCB –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 fT — I E 500 0 – 0.01 – 0.03 – 0.1 – 0.3 –10 20 –3 – 0.03 160 Collector current IC (A) Collector output capacitance Cob (pF) –12 Ta=–25˚C 25˚C 75˚C –1 VCE=–10V Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –30 0 –1 –10 –3 – 0.1 600 IC/IB=10 18 –8 –10 hFE — IC –100 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –6 –30 Collector to emitter voltage VCE (V) VCE(sat) — IC –1 –4 IC/IB=10 – 0.3 Transition frequency fT (MHz) 0 Base to emitter saturation voltage VBE(sat) (V) Ta=25˚C Collector current IC (mA) Collector power dissipation PC (mW) –100 450 0 2 VBE(sat) — IC –1200 500 –1000 100