Transistor 2SC3929, 2SC3929A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1531 and 2SA1531A Unit: mm ■ Features 2SC3929A Collector to 2SC3929 VEBO Peak collector current 35 0.3–0 0.65 +0.1 V 55 5 V ICP 100 mA Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1.3±0.1 V 55 VCEO Emitter to base voltage Unit 35 VCBO emitter voltage 2SC3929A 2 Ratings +0.1 2SC3929 base voltage 3 0.15–0.05 Collector to 0.65 (Ta=25˚C) Symbol 1 0 to 0.1 Parameter 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● 0.425 2.0±0.2 ● 2.1±0.1 Low noise voltage NV. High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 0.9±0.1 ● 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : S(2SC3929) T(2SC3929A) (Ta=25˚C) Symbol Parameter Conditions min typ max Unit ICBO VCB = 10V, IE = 0 100 nA ICEO VCE = 10V, IB = 0 1 µA VCBO IC = 10µA, IE = 0 VCEO IC = 2mA, IB = 0 Emitter to base voltage VEBO IE = 10µA, IC = 0 Forward current transfer ratio hFE* VCE = 5V, IC = 2mA Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA Base to emitter voltage VBE VCE = 1V, IC = 100mA Noise voltage NV Transition frequency fT Collector cutoff current Collector to base 2SC3929 voltage 2SC3929A Collector to emitter 2SC3929 voltage 2SC3929A *1h FE1 35 V 55 35 V 55 V 5 180 700 0.7 VCE = 10V, IC = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT VCB = 5V, IE = –2mA, f = 200MHz 80 0.6 V 1 V 150 mV MHz Rank classification Marking Symbol Rank R S T hFE 180 ~ 360 260 ~ 520 360 ~ 700 2SC3929 SR SS ST 2SC3929A TR TS TT 1 Transistor 2SC3929, 2SC3929A PC — Ta IC — VCE Ta=25˚C 120 80 IB=350µA 120 300µA 100 250µA 80 200µA 60 150µA 100µA 40 Collector current IC (mA) 160 120 100 80 60 40 40 50µA 20 20 0 40 60 80 100 120 140 160 0 0 2 Collector to emitter saturation voltage VCE(sat) (V) VCE=5V 100 –25˚C 80 60 40 20 0 0 0.4 0.8 1.2 1.6 2.0 30 10 3 1 0.3 0.1 25˚C Ta=75˚C –25˚C 0.03 0.01 0.1 0.3 1 3 10 200 100 –30 Emitter current IE (mA) –100 0.2 0.3 0.4 0.5 hFE — IC 720 30 VCE=5V 600 Ta=75˚C 480 25˚C 360 –25˚C 240 120 0 0.1 100 0.3 1 3 10 30 100 Collector current IC (mA) NV — VCE 20 160 IE=0 f=1MHz Ta=25˚C IC=1mA GV=80dB Function=FLAT 140 16 Noise voltage NV (mV) 300 –10 0.1 Base current IB (mA) Collector current IC (mA) Collector output capacitance Cob (pF) 400 –3 0 Cob — VCB VCB=5V Ta=25˚C –1 12 IC/IB=10 fT — IE 0 – 0.1 – 0.3 10 100 Base to emitter voltage VBE (V) 500 8 VCE(sat) — IC 120 Ta=75˚C 6 Collector to emitter voltage VCE (V) IC — VBE 25˚C 4 Forward current transfer ratio hFE 20 Ambient temperature Ta (˚C) Collector current IC (mA) VCE=5V Ta=25˚C 140 200 0 Transition frequency fT (MHz) 160 140 0 2 IC — I B 160 Collector current IC (mA) Collector power dissipation PC (mW) 240 12 8 4 120 Rg=100kΩ 100 80 60 22kΩ 40 4.7kΩ 20 0 0.1 0 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 Collector to emitter voltage VCE (V) Transistor 2SC3929, 2SC3929A NV — VCE NV — IC 240 IC=1mA GV=80dB Function=RIAA 180 120 22kΩ 60 4.7kΩ 3 VCE=10V GV=80dB Function=RIAA VCE=10V GV=80dB Function=FLAT 120 100 Rg=100kΩ 80 60 22kΩ 40 4.7kΩ 240 180 Rg=100kΩ 120 22kΩ 60 4.7kΩ 20 0 1 300 140 Noise voltage NV (mV) Noise voltage NV (mV) Rg=100kΩ 10 30 0 0.01 100 Collector to emitter voltage VCE (V) 0.03 0.1 0.3 1 Collector current IC (mA) NV — Rg 0 0.01 0.03 0.1 0.3 1 Collector current IC (mA) NV — Rg 160 300 VCE=10V GV=80dB Function=RIAA 120 100 80 IC=1mA 60 0.5mA 40 0.1mA Noise voltage NV (mV) VCE=10V GV=80dB Function=FLAT 140 Noise voltage NV (mV) NV — IC 160 Noise voltage NV (mV) 300 240 180 IC=1mA 120 0.5mA 60 0.1mA 20 0 0 1 3 10 30 100 Signal source resistance Rg (kΩ) 1 3 10 30 100 Signal source resistance Rg (kΩ) 3