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Features
Applications
■ Special alloy resistor
■ Power supplies
■ Power rating at 70 °C: 3 W
■ Stepper motor drives
■ Inductance less than 5 nH
■ Input amplifiers
■ RoHS compliant*
■ AEC-Q200 qualified, automotive grade
CRA2512 - High Power Current Sense Chip Resistor
Electrical Characteristics
Recommended Solder Pad Layout
Characteristic
L
CRA2512
Power Rating @ 70 °C
3W
Operating Temperature Range
-55 °C to +170 °C
Derated to Zero Load at
+170 °C
Maximum Working Current
(P / R)1/2
Insulation Resistance
> 100 megohms
Resistance Range
0.010 - 0.100 Ω
A
Cu TRACE
SENSING TRACE
Resistance Tolerance
±1 %, ±5 %
Model
Temperature Coefficient
±75 PPM/°C
CRA2512
Thermal Shock
Short Time Overload
Low Temperature
Storage
High Temperature
Exposure
Bias Humidity
Mechanical Shock
Vibration
Load Life
Resistance to Solder
Heat
Moisture Resistance
A
Conditions
-55 ˚C to + 150 ˚C,
1000 Cycles, 15 minutes
5 X Rated Power for 5 seconds
Specification
ΔR < ±0.5 %
-55 ˚C for 24 hours
ΔR < ±0.5 %
1000 hours @ + 170 ˚C
ΔR < ±1.0 %
+ 85 ˚C, 85 % RH, 10 % Bias,
1000 hours
100 g’s for 6 milliseconds, 5 pulses
Frequency varied 10 to 2000 KHz
in one minute, 3 directions, 12 hours
1000 hours at rated power at
+70 ˚C, 1.5 hours on, 0.5 hours off
+260 ˚C Solder, 10-12 second dwell,
25 mm/second emergence
MIL-STD-202 Method 106, 0 % power
(7a and 7b not required)
ΔR < ±0.5 %
B
4.0
(0.157)
DIMENSIONS:
Performance Characteristics
Test
B
L
2.1
4.1
(0.083) (0.161)
MM
(INCHES)
Construction
ΔR < ±0.5 %
Overcoat
Ni / Sn
Plating
Metal Alloy Plate
ΔR < ±0.5 %
ΔR < ±0.5 %
ΔR < ±1.0 %
ΔR < ±0.5 %
ΔR < ±0.5 %
Product Dimensions
A
T
B
C
C
Model
CRA2512
C
C
A
B
C
T
Resistor
Material
6.45 ± 0.20
(0.254 ± 0.008)
3.35 ± 0.20
(0.131 ± 0.008)
0.95 ± 0.10
(0.037 ± 0.004)
0.7 ± 0.20
(0.0276 ± 0.008)
Resistor Cu-Ni
or Cu-Mn
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
DIMENSIONS:
MM
(INCHES)
CRA2512 - High Power Current Sense Chip Resistor
Packaging Dimensions (Conforms to EIA RS-481A)
EMBOSSED TAPE
1.5
(0.059)
DIA. MIN.
1.5 +0.1/-0
DIA.
(0.059 +0.004/-0)
TOP TAPE
1.75 ± 0.1
(0.069 ± 0.004)
5.5 ± 0.05
(0.217 ± 0.002)
13.0 ± 1.0
(0.512 ± 0.039)
DIA.
180 +0/-3
(7.09 +0/-0.118)
DIA.
12.0 ± 0.2
(0.472 ± 0.008)
6.9 ± 0.2
(0.272 ± 0.008)
4.0 ± 0.05
(0.157 ± 0.002)
RESISTOR
3.60 ± 0.20
(0.142 ± 0.008)
4.0 ± 0.1
(0.157 ± 0.004)
1.2 ± 0.15
(0.047 ± 0.006)
60.0
(2.362)
MIN.
DIA.
2.0 ± 0.05
(0.079 ± 0.002)
USER DIRECTION OF FEED
DIMENSIONS:
Code
R Value
Code
R Value
R010
0.010
R050
0.050
R015
0.015
R060
0.060
R020
0.020
R070
0.070
R025
0.025
R075
0.075
R030
0.030
R080
0.080
R040
0.040
R100
0.100
Consult factory for other resistance values.
13.0 ± 1.0
(0.512 ± 0.039)
Soldering Profile
Can be soldered in accordance with IPC/JEDEC-J-STD-020.
275
<1> Maximum of 20 seconds between
260 °C peak
+255 °C and +260 °C
<1> 255 °C
225
220 °C
Temperature (°C)
CRA2512 Resistance Values Available
15.4 ± 2.0
(0.606 ± 0.079)
MM
(INCHES)
190 °C
175
90 - 150
seconds
Ramp Down
6 °C/second
150 °C
125
60 - 120 seconds
Derating Curve
10 seconds minimum
Power Ratio (%)
75
Ramp Up
3 °C/second maximum
100
25
0
-55
70
50
100
150
Time (seconds)
200
250
300
170
Ambient Temperature (°C)
How to Order
CRA 2512 - F Z - R020 E LF
REV. 09/15
Model
(CRA = Precision Chip Resistor
Size
2512 = 2512 Size
Resistance Tolerance
• F = ±1 %
• J = ±5 %
TCR (PPM/°C)
• Z = ±75 PPM/°C
Resistance Value
“R” (decimal point) followed by three significant digits (example: R025 = 0.025 ohm)
Packaging
• E = 4000 pieces on 180 mm (7 inch) reel
Termination
• LF = Tin-plated (RoHS compliant)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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