BZX1.5C3V3

R
BZX1 . 5C3V3 THRU BZX1 . 5C 200
1.5W SILICON PLANAR ZENER DIODES
S E M I C O N D U C T O R
DO-41(GLASS)
FEATURES
High temperature soldering guaranteed:260℃/10 seconds at terminals
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
1.00(25.4)
MIN.
0.107(2.7)
0.080(2.0)
DIA.
0.205(5.20)
0.161(4.10)
MECHANICAL DATA
Case: DO-41 glass case
1.00(25.4)
MIN.
Weight: Approx. 0.35 gram
0.034(0.86)
MAX
DIA.
Dimensions in inches and (millimeters)
ABSOLUTE MAXIMUM RATINGS(LIMITING VALUES) (TA=25 C)
Symbols
Units
Value
Zener current see table "Characteristics"
Ptot
TJ
TSTG
Power dissipation at TA=25 C
Junction temperature
Storage temperature range
W
1.51)
175
C
C
-65 to+175
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
ELECTRICAL CHARACTERISTICS (TA=25 C)
Symbols
Forward voltage at IF=200mA
Min
VF
Typ
Max
Units
1.2
V
1) Valid provided that a distance of 8mm from case is kept at ambient temperature
JINAN JINGHENG ELECTRONICS CO., LTD.
10-24
HTTP://WWW.JINGHENGGROUP.COM
BZX1 . 5C3V3 ... BZX1 . 5C200 SILICON PLANAR ZENER DIODES
Zener Voltage Range
Type
1)
Dynamic Resistance
IZT
Reverse leakage current
(IR at VR)
Maximum
DC Zener
Current 2)
IZM
mA
IR
uA
VR
V
mA
500
1
100
1
454
500
1
75
1
416
7.5
500
1
25
1
384
87.2
6
500
1
5
1
348
4.4…5.0
79.8
5
500
1
5
1.5
319
5.1
4.8…5.4
73.5
4
350
1
5
2
294
BZX1.5C5V6
5.6
5.2…6.0
66.9
2
250
1
5
3
267
BZX1.5C6V2
6.2
5.8…6.6
60.5
2
200
1
5
4
241
BZX1.5C6V8
6.8
6.4…7.2
55.1
2.5
200
1
5
5.2
220
BZX1.5C7V5
7.5
7.0…7.9
50
3
400
0.5
5
6.8
200
BZX1.5C8V2
8.2
7.7…8.7
45.7
3.5
400
0.5
5
6.5
182
BZX1.5C9V1
9.1
8.5…9.6
41.2
4
500
0.5
5
7
164
BZX1.5C10
10
9.4…10.6
37.5
4.5
500
0.25
5
8
150
BZX1.5C11
11
10.4…11.6
34.1
5.5
550
0.25
1
8.4
136
BZX1.5C12
12
11.4…12.7
31.2
6.5
550
0.25
1
9.1
125
BZX1.5C13
13
12.4…14.1
28.8
7
550
0.25
1
9.9
115
BZX1.5C15
15
13.8…15.6
25
9
550
0.25
1
11.4
100
BZX1.5C16
16
15.3…17.1
23.4
10
600
0.25
1
12.2
93
BZX1.5C18
18
16.8…19.1
20.8
12
600
0.25
1
13.7
83
BZX1.5C20
20
18.8…21.2
18.7
14
650
0.25
1
15.2
75
BZX1.5C22
22
20.8…23.3
17
17.5
650
0.25
1
16.7
68
BZX1.5C24
24
22.8…25.6
15.6
19
700
0.25
1
18.2
62
BZX1.5C27
27
25.1…28.9
13.9
23
700
0.25
1
20.6
55
BZX1.5C30
30
28…32
12.5
26
750
0.25
1
22.8
50
BZX1.5C33
33
31…35
11.4
33
800
0.25
1
25.1
45
BZX1.5C36
36
34…38
10.4
38
850
0.25
1
27.4
41
BZX1.5C39
39
37…41
9.6
45
900
0.25
1
29.7
38
BZX1.5C43
43
40…46
8.7
53
950
0.25
1
32.7
34
BZX1.5C47
47
44…50
8
67
1,000
0.25
1
35.8
31
BZX1.5C51
51
48…54
7.3
70
1,100
0.25
1
38.8
29
BZX1.5C56
56
52…60
6.7
86
1,300
0.25
1
42.6
26
BZX1.5C62
62
58…66
6
100
1,500
0.25
1
44.1
24
BZX1.5C68
68
64…72
5.5
120
1,700
0.25
1
51.7
22
BZX1.5C75
75
70…79
5
140
2,000
0.25
1
56
20
BZX1.5C82
82
77…87
4.6
160
2,500
0.25
1
62.2
18
BZX1.5C91
91
85…96
4.1
200
3,000
0.25
1
69.2
16
BZX1.5C100
100
94…106
3.7
250
3,100
0.25
1
76
15
BZX1.5C110
110
104…116
3.4
300
4,000
0.25
1
83.6
13
BZX1.5C120
120
114…127
2.1
380
4,500
0.25
1
91.2
12
BZX1.5C130
130
124…141
2.9
450
5,000
0.25
1
98.8
11
BZX1.5C150
150
138…156
2.5
600
6,000
0.25
1
114
10
BZX1.5C160
160
153…171
2.3
700
6,500
0.25
1
121.6
9
BZX1.5C180
180
168…191
2.1
900
7,000
0.25
1
136.8
8
BZX1.5C200
200
188…212
1.9
1,200
8,000
0.25
1
152
7
Vznom
V
VZT at IZT
V
BZX1.5C3V3
3.3
BZX1.5C3V6
3.6
BZX1.5C3V9
mA
Ohm at
IZT
Ohm at
IZK
3.1…3.5
113.6
10
3.4…3.8
104.2
9
3.9
3.7…4.1
96.1
BZX1.5C4V3
4.3
4.0…4.6
BZX1.5C4V7
4.7
BZX1.5C5V1
Note 1) Tested with pulse tp=20ms
IZK
2) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case
JINAN JINGHENG ELECTRONICS CO., LTD.
10-25
HTTP://WWW.JINGHENGGROUP.COM
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