Power Transistors 2SD2051 Silicon NPN epitaxial planar type Darlington For low-frequency amplification Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings 16.7±0.3 (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 60±10 V Collector to emitter voltage VCEO 60±10 V Emitter to base voltage VEBO Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C 5 V ICP 2.5 A IC 1.6 A 12 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter W 2.0 4.2±0.2 φ3.1±0.1 4.0 ● 14.0±0.5 ● High foward current transfer ratio hFE Incorporating a built-in zener diode Full-pack package which can be installed to the heat sink with one screw 2.7±0.2 1.4±0.1 Solder Dip ● 5.5±0.2 7.5±0.2 ■ Features 4.2±0.2 10.0±0.2 0.8±0.1 1.3±0.2 +0.2 0.5 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) Internal Connection C 150 ˚C –55 to +150 ˚C B E (TC=25˚C) Symbol Conditions min VCB = 25V, IE = 0 typ max Unit 1 µA 1 µA 70 V Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 4V, IC = 0 Collector to base voltage VCBO IC = 100µA, IE = 0 50 Collector to emitter voltage VCEO IC = 1mA, IB = 0 50 70 V Emitter to base voltage VEBO IE = 100µA, IC = 0 5 Forward current transfer ratio hFE * VCE = 10V, IC = 1.0A Collector to emitter saturation voltage VCE(sat) IC = 1.0A, IB = 1.0mA Base to emitter saturation voltage VBE(sat) IC = 1.0A, IB = 1.0mA Transition frequency fT VCE = 10V, IC = 10mA, f = 200MHz *h FE 4000 V 40000 1.5 2.2 200 V V MHz Rank classification Rank hFE Q R S 4000 to 10000 8000 to 20000 16000 to 40000 1 Power Transistors 2SD2051 IC — VCE 2 1 70µA 60µA 0.8 50µA 0.6 0.4 40µA 0.2 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 VBE(sat) — IC Forward current transfer ratio hFE 25˚C 100˚C 0.3 0.1 0.03 0.3 1 1 105 25˚C 104 3 Collector current IC (A) 10 25˚C TC=–25˚C 0.3 100˚C 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 10 Cob — VCB TC=100˚C –25˚C 103 102 0.1 3 20 VCE=10V 10 0.01 0.01 0.03 10 hFE — IC IC/IB=1000 TC=–25˚C IC/IB=1000 30 Collector current IC (A) 106 30 1 12 100 Collector to emitter voltage VCE (V) 100 3 10 Collector output capacitance Cob (pF) 0 Base to emitter saturation voltage VBE(sat) (V) 90µA 80µA 1.0 3 0 2 VCE(sat) — IC IB=100µA TC=25˚C Without heat sink Collector current IC (A) Collector power dissipation PC (W) 1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 4 IE=0 f=1MHz TC=25˚C 18 16 14 12 10 8 6 4 2 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 10 1 3 10 30 100 Collector to base voltage VCB (V)