Composite Transistors XP2501 Silicon NPN epitaxial planer transistor Unit: mm 0.2±0.05 For general amplification 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 2SD601A × 2 elements 0 to 0.1 ● 0.7±0.1 ■ Basic Part Number of Element 0.12 – 0.02 0.2 ● Two elements incorporated into one package. (Base-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 ● 0.65 ■ Features 0.65 0.425 ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage Rating Emitter to base voltage of element Collector current VCEO 50 V VEBO 7 V IC 100 mA Peak collector current ICP 200 mA Total power dissipation PT 150 mW Overall Junction temperature Tj 150 ˚C Tstg –55 to +150 ˚C Storage temperature ■ Electrical Characteristics Parameter Collector to base voltage 4 : Collector (Tr2) 5 : Collector (Tr1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: 5W Internal Connection 1 Tr1 5 2 3 Tr2 4 (Ta=25˚C) Symbol Conditions min typ max Unit VCBO IC = 10µA, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V Collector cutoff current *1 1 : Emitter (Tr1) 2 : Base 3 : Emitter (Tr2) 0.2±0.1 ICBO VCB = 20V, IE = 0 0.1 µA ICEO VCE = 10V, IB = 0 100 µA Forward current transfer ratio hFE VCE = 10V, IC = 2mA 160 Forward current transfer hFE ratio hFE (small/large)*1 VCE = 10V, IC = 2mA 0.5 460 0.99 Collector to emitter saturation voltage VCE(sat) IC = 100mA, IB = 10mA 0.1 Transition frequency fT VCB = 10V, IE = –1mA, f = 200MHz 150 0.3 MHz V Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 3.5 pF Ratio between 2 elements 1 Composite Transistors XP2501 PT — Ta IC — VCE 250 IB — VBE 60 1200 100 50 1000 140µA 40 120µA 100µA 30 80µA 20 60µA 40µA 10 600 400 200 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 0 Collector to emitter voltage VCE (V) IC — VBE Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C Collector current IC (mA) 200 160 25˚C Ta=75˚C –25˚C 80 40 160 120 80 40 0 0 0.4 0.8 1.2 1.6 0 2.0 0 Base to emitter voltage VBE (V) 200 hFE — IC 400 600 300 –25˚C 200 100 0.3 1 3 1 0.3 10 30 Collector current IC (mA) 100 25˚C 0.1 Ta=75˚C –25˚C 0.03 0.3 1 3 10 30 100 Collector current IC (mA) NV — IC 240 240 Noise voltage NV (mV) Transition frequency fT (MHz) 25˚C IC/IB=10 3 0.01 0.1 1000 VCB=10V Ta=25˚C Ta=75˚C 400 1.0 10 fT — I E VCE=10V 0 0.1 800 300 500 0.8 30 Base current IB (µA) 600 0.6 100 VCE=10V 200 0.4 VCE(sat) — IC 240 120 0.2 Base to emitter voltage VBE (V) IC — I B 240 Collector current IC (mA) 800 20µA 0 Forward current transfer ratio hFE Base current IB (µA) 150 0 2 VCE=10V Ta=25˚C 50 200 Collector current IC (mA) Total power dissipation PT (mW) Ta=25˚C IB=160µA 180 120 60 VCE=10V GV=80dB Function=FLAT 200 Ta=25˚C 160 Rg=100kΩ 120 80 22kΩ 4.7kΩ 40 0 –0.1 –0.3 –1 –3 –10 –30 Emitter current IE (mA) –100 0 10 20 30 50 100 200 300 500 1000 Collector current IC (µA)