T PL IA N M CO *R oH S Features This series is currently available but not recommended for new designs. ■ DC to 9 GHz ■ Low VSWR ■ Aluminum Nitride ceramic Applications ■ Terminal for lead attachment ■ Isolators ■ RF amplifiers CHF2525CNT Series 9 GHz 40 W Termination Chip Substrate ......................................... ALN Resistive Film .........................Thick Film Resistance ...................................... 50 Ω Tolerance ........................................±5 % Packaging Bulk ................................ 100 pcs./bag Absolute Ratings Power .............................................40 W Frequency.....................................9 GHz VSWR ............................... 1.2 Maximum Characteristic Curve 70 60 50 Power (Watts) General Specifications 40 30 20 10 0 -55 0 100 150 Heat Sink Temperature (°C) Product Dimensions 6.35 (0.25) 6.35 (0.25) DIMENSIONS = MILLIMETERS (INCHES) 1.2 (0.047) 1.0 (0.039) Terminal 1 (Input) Terminal 2 (Return) 0.635 (0.025) How to Order CHF 2525 C N T 500 L W REV. 12/15 *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Specifications are subject to change without notice. The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time. Users should verify actual device performance in their specific applications. Model Size Version Substrate Mount T = Tab Value 500 = 50 Ohm Function L = Termination Finish W = NiSn X = NiAu