Transistor 2SC4805 Silicon NPN epitaxial planer type For 2GHz band low-noise amplification Unit: mm 2.1±0.1 ■ Features 0.425 0.3–0 0.65 1.3±0.1 +0.1 1.25±0.1 1 0.65 ● High transition frequency fT. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.425 3 Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current IC 65 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~+150 ˚C ■ Electrical Characteristics Parameter +0.1 0.15–0.05 Symbol 0 to 0.1 Parameter 0.7±0.1 (Ta=25˚C) 0.9±0.1 ■ Absolute Maximum Ratings 0.2 2 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 3S (Ta=25˚C) Symbol Conditions min typ Collector cutoff current ICBO VCB = 10V, IE = 0 Emitter cutoff current IEBO VEB = 1V, IC = 0 Forward current transfer ratio hFE VCE = 8V, IC = 200mA* 50 120 Transition frequency fT VCE = 8V, IC = 15mA, f = 1.5GHz 7.0 8.5 Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz |2 VCE = 8V, IC = 15mA, f = 1.5GHz Unit 1 µA 1 µA 300 GHz 0.6 7 max 1 pF Foward transfer gain | S21e 9 dB Maximum unilateral power gain GUM VCE = 8V, IC = 15mA, f = 1.5GHz 10 dB Noise figure NF VCB = 8V, IC = 7mA, f = 1.5GHz 2.2 3 * dB Pulse measurement 1 2SC4805 Transistor PC — Ta IC — VCE 120 IB=250µA 25 160 120 80 40 20 200µA 15 150µA 10 100µA 5 50µA 60 80 100 120 140 160 2 1 0.3 Ta=75˚C 0.1 25˚C –25˚C 0.03 0.01 0.003 3 10 30 0.4 0.2 0 30 100 Collector to base voltage VCB (V) 120 25˚C 80 –25˚C 40 0.8 1 3 10 12 30 10 1.2 8 6 4 2 100 1 3 10 30 100 Collector current IC (mA) NF — IC 6 VCE=8V f=1.5GHz Ta=25˚C 10 VCE=8V f=1.5GHz Ta=25˚C 5 8 6 4 2 0 0.1 1.0 0 0.3 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.4 0.6 VCB=8V f=1.5GHz Ta=25˚C GUM — IC 0.6 10 0.2 Base to emitter voltage VBE (V) Collector current IC (mA) 0.8 3 0 fT — IC Ta=75˚C 160 0 0.1 100 IE=0 f=1MHz Ta=25˚C 1 12 12 Cob — VCE 1.0 10 200 Collector current IC (mA) 1.2 8 VCE=8V Forward current transfer ratio hFE 3 1 6 240 IC/IB=10 0.3 4 hFE — IC 10 –25˚C 40 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.001 0.1 Ta=75˚C 60 0 0 Transition frequency fT (GHz) 40 25˚C 80 20 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 100 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=8V Ta=25˚C 0 2 IC — VBE 30 Collector current IC (mA) Collector power dissipation PC (mW) 240 4 3 2 1 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100