Composite Transistors XN6435 Silicon PNP epitaxial planer transistor Unit: mm For high-frequency amplification +0.2 2.8 –0.3 +0.25 3 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –30 V Rating Collector to emitter voltage of element Emitter to base voltage Collector current VCEO –20 V VEBO –5 V IC –30 mA PT 300 mW Total power dissipation Overall Junction temperature Storage temperature Tj 150 ˚C Tstg –55 to +150 ˚C 1 : Collector (Tr1) 2 : Base (Tr1) 3 : Collector (Tr2) 4 : Base (Tr2) 5 : Emitter (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 7W Internal Connection 6 Tr1 4 ■ Electrical Characteristics Parameter 1 2 5 Tr2 3 (Ta=25˚C) max Unit ICBO VCB = –10V, IE = 0 –0.1 µA ICEO VCE = –20V, IB = 0 –100 µA IEBO VEB = –5V, IC = 0 –10 µA Forward current transfer ratio hFE VCE = –10V, IC = –1mA 50 Forward current transfer hFE ratio hFE (small/large)*1 VCE = –10V, IC = –1mA 0.5 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA – 0.1 V Base to emitter voltage VBE VCE = –10V, IC = –1mA – 0.7 V Collector cutoff current Emitter cutoff current *1 +0.1 +0.1 0 to 0.05 0.4±0.2 ■ Absolute Maximum Ratings 1.45±0.1 +0.1 4 0.1 to 0.3 Parameter 0.5 –0.05 0.95 2 0.16–0.06 2SA1022 × 2 elements 5 0.95 +0.2 2.9 –0.05 1.1–0.1 ● +0.2 ■ Basic Part Number of Element 1.9±0.1 Two elements incorporated into one package. Reduction of the mounting area and assembly cost by one half. 0.8 ● 0.65±0.15 1 6 ■ Features ● 1.5 –0.05 0.3 –0.05 0.65±0.15 Symbol Conditions min typ 220 0.99 Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz Noise figure NF VCB = –10V, IE = 1mA, f = 5MHz 150 MHz Reverse transfer impedance Zrb VCB = –10V, IE = 1mA, f = 2MHz 22 Ω Common emitter reverse transfer capacitance Cre VCB = –10V, IE = 1mA, f = 10.7MHz 1.2 pF 2.8 dB Ratio between 2 elements 1 Composite Transistors XN6435 PT — Ta IC — VCE VCE(sat) — IC –30 –100 –25 400 Collector current IC (mA) 300 200 100 IB=–250µA –20 –200µA –15 –150µA –10 –100µA –50µA –5 0 0 0 40 80 120 0 160 –2 –6 hFE — IC Ta=75˚C 25˚C –25˚C 60 40 20 0 –0.1 –0.3 –1 –3 –10 –30 Collector output capacitance Cob (pF) VCE=–10V 80 f=1MHz IE=0 Ta=25˚C 5 4 3 2 1 0 –0.1 –0.3 –100 Collector current IC (mA) –1 –3 fT — IE 20 400 300 200 100 3 10 30 Emitter current IE (mA) 2 –10 –30 100 –1 –3 –10 –30 –100 Collector current IC (mA) –100 5 IC=–1mA f=10.7MHz Ta=25˚C 4 3 2 1 0 –1 –2 –3 –5 –10 –20 –30 –50 –100 Collector to emitter voltage VCE (V) NF — IE 5 VCB=–10V f=100MHz Ta=25˚C 4 16 12 8 3 2 1 4 1 –0.01 –0.1 –0.3 Noise figure NF (dB) Power gain PG (dB) Transition frequency fT (MHz) 500 –25˚C –0.03 VCE= –10V f=100MHz Ta=25˚C VCB=–10V Ta=25˚C 25˚C –0.1 PG — IC 24 Ta=75˚C –0.3 Collector to base voltage VCB (V) 600 0.3 –1 Cre — VCE 6 100 –10 –3 Cob — VCB 120 0 0.1 –8 –10 Collector to emitter voltage VCE (V) Ambient temperature Ta (˚C) Forward current transfer ratio hFE –4 IC/IB=10 –30 Common emitter reverse transfer capacitance Cre (pF) Total power dissipation PT (mW) Ta=25˚C Collector to emitter saturation voltage VCE(sat) (V) 500 0 –0.1 –0.3 –1 –3 –10 –30 Collector current IC (mA) –100 0 0.1 0.2 0.3 0.5 1 2 3 5 Emitter current IE (mA) 10