Power Transistors 2SB1643 Silicon PNP epitaxial planar type ● 1.5±0.1 10.0±0.3 1.0±0.1 1.1max. 2.0 1.5max. High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For power amplification 0.8±0.1 0.5max. 2.54±0.3 5.08±0.5 ■ Absolute Maximum Ratings 1 2 1:Base 2:Collector 3:Emitter N Type Package 3 (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –6 V Peak collector current ICP –6 A Collector current IC –3 A Base current IB –1 A Collector power TC=25°C dissipation Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 3.0–0.2 +0 4.4±0.5 R0.5 R0.5 0 to 0.4 1.1 max. 5.08±0.5 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) ICBO Collector cutoff current +0.4 1.5–0.4 10.0±0.3 2.0 4.4±0.5 W 1.3 Symbol Parameter 1.0±0.1 2.54±0.3 1 ■ Electrical Characteristics 6.0±0.3 0.8±0.1 40 PC 3.4±0.3 14.7±0.5 Unit: mm 8.5±0.2 max Unit VCB = –60V, IE = 0 –100 µA Conditions min typ ICEO VEB = –40V, IC = 0 –100 µA Emitter cutoff current IEBO VEB = –6V, IC = 0 –100 µA Collector to emitter voltage VCEO IC = –25mA, IB = 0 –60 Forward current transfer ratio hFE* VCE = –4V, IC = – 0.5A 300 Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = – 0.05A Transition frequency fT VCE = –12V, IC = – 0.2A, f = 10MHz *h FE V 700 –1 30 V MHz Rank classification Rank Q P hFE 300 to 500 400 to 700 1 Power Transistors 2SB1643 PC — Ta IC — VCE IC — VBE –6 40 30 (1) 20 –6 TC=25˚C VCE=–4V –5 10 –5 IB=–100mA –80mA –60mA –4 –40mA –3 –20mA –2 –10mA –5mA Collector current IC (A) (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) Collector current IC (A) Collector power dissipation PC (W) 50 –1 –4 –3 –2 25˚C TC=125˚C –25˚C –1 (2) –2mA (3) 0 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –12 VCE=–4V Transition frequency fT (MHz) TC=100˚C –25˚C – 0.1 – 0.03 –1 –3 TC=100˚C 25˚C 1000 25˚C –3 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –25˚C 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –10 Collector current IC (A) Cob — VCB –1 –3 3 Pulsed tw=1ms Duty cycle=1% IC/IB=40 (–IB1=IB2) VCC=–50V TC=25˚C 10 3 tf 1 ton tstg 0.3 –10 –30 30 10 3 –100 Collector to base voltage VCB (V) –1 –3 –10 Non repetitive pulse TC=25˚C –10 –3 ICP t=1ms IC 10ms –1 300ms – 0.3 0.1 – 0.1 – 0.03 0.01 –3 100 –30 0.03 1 –1 300 Area of safe operation (ASO) Collector current IC (A) 10 –2.0 –100 30 Switching time ton,tstg,tf (µs) 30 –1.6 Collector current IC (A) ton, tstg, tf — IC 100 –1.2 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 100 IE=0 f=1MHz TC=25˚C – 0.8 VCE=–12V f=10MHz TC=25˚C Collector current IC (A) 1000 300 – 0.4 Base to emitter voltage VBE (V) 1000 3000 –10 –1 0 fT — IC IC/IB=40 –30 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –10 hFE — IC 10000 – 0.3 Collector output capacitance Cob (pF) –8 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 2 –6 0 –2 –4 –6 Collector current IC (A) –8 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1643 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3