Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation PD 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 10˚ 1.1+0.2 –0.1 Ratings Gate to Drain voltage 1.1+0.3 –0.1 Symbol 2.90+0.20 –0.05 0 to 0.1 Parameter 0.4±0.2 (0.65) 2 1 (0.95) (0.95) ■ Absolute Maximum Ratings (Ta = 25°C) 5˚ 1.50+0.25 –0.05 ● Low ON-resistance ● Low-noise characteristics 2.8+0.2 –0.3 3 ■ Features 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini3-G1 Package Marking Symbol (Example): 4M ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain to Source cut-off current IDSS * Gate to Source leakage current IGSS VGS = 30 V, VDS = 0 Gate to Drain voltage VGDS IG = 10 µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = −10 V, ID = −10 µA Forward transfer admittance | Yfs | VDS = −10 V, ID = −1 mA, f = 1 kHz Drain to Source ON-resistance RDS(on) VDS = −10 mV, VGS = 0 Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss * Conditions VDS = −10 V, VGS = 0 VDS = −10 V, VGS = 0, f = 1 MHz min typ − 0.2 max Unit −6 mA 10 nA 65 V 1.5 1.8 3.5 V 2.5 mS 300 Ω 12 pF 4 pF IDSS rank classification Runk O P Q R IDSS (mA) − 0.2 to −1 − 0.6 to −1.5 −1 to −3 −2.5 to −6 Marking Symbol 4MO 4MP 4MQ 4MR Note) The part number in the parenthesis shows conventional part number. Publication date: January 2002 SJF00001BED 1 2SJ0163 ID VDS −4.0 175 −3.5 150 −3.0 100 75 50 −2.5 VGS = 0 V −2.0 −1.5 0.2 V −1.0 0.4 V 0.6 V − 0.5 25 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (°C) −2 | Yfs | VGS −1.0 − 0.5 −4 −6 −8 −10 0 −12 0 | Yfs | ID 2.5 2.0 1.5 1.0 0.5 1.0 0.5 Gate to source voltage VGS (V) 0 3 12 10 8 6 4 2 0 −2 −4 −6 −8 −10 Drain current ID (mA) SJF00001BED 4 5 Ciss, Coss, Crss VDS VDS = −10 V f = 1 kHz Ta = 25°C 14 0 1.5 2 24 −12 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Forward transfer admittance |Yfs| (mS) VDS = −10 V f = 1 kHz Ta = 25°C 1 Gate to source voltage VGS (V) 16 3.0 0 2.0 −1.5 Drain to source voltage VDS (V) 4.0 3.5 −2.0 0.8 V 0 0 Forward transfer admittance |Yfs| (mS) VDS = −10 V −2.5 Drain current ID (mA) 125 0 2 ID VGS −3.0 Ta = 25°C Drain current ID (mA) Allowable power dissipation PD (mW) PD T a 200 f = 1 MHz VGS = 0 Ta = 25°C 20 16 Ciss 12 8 4 Coss Crss 0 −1 −3 −10 −30 −100 Drain to source voltage VDS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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