Silicon Junction FETs (Small Signal) 2SK2751 Silicon N-Channel Junction FET For impedance conversion in low frequency For pyroelectric sensor unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 1 0.95 3 +0.1 0.4 –0.05 +0.2 2.9 –0.05 ● Low noise-figure (NF) ● High gate to drain voltage VGDO ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 1.9±0.2 ■ Features ■ Absolute Maximum Ratings (Ta = 25°C) Symbol Ratings +0.1 Unit VGDS −40 V Drain current ID 10 mA Gate current IG 2 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Gate to Drain voltage 0.16 –0.06 0.1 to 0.3 0.4±0.2 0 to 0.1 Parameter 0.8 +0.2 1.1 –0.1 2 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Package (3-pin) Marking Symbol: HS ■ Electrical Characteristics (Ta = 25 ± 3°C) Parameter Symbol Conditions Drain to Source cut-off current IDSS VDS = 10V, VGS = 0 Gate to Source leakage current IGSS VGS = −20V, VDS = 0 Gate to Drain voltage VGDS IG = −100µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 1µA Forward transfer admittance | Yfs | VDS = 10V, ID = 1µA, f = 1kHz Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss min typ 1.4 max Unit 4.7 mA −1 nA −40 V −3.5 2.5 V mS 5 pF 1 pF 1 pF Note: The test method to comply with JISC7030, Field effect transistor test method. 1 Silicon Junction FETs (Small Signal) PD Ta ID VDS 6 VDS=10V Ta=25˚C Ta=–25˚C 25˚C 10 200 5 150 100 50 8 Drain current ID (mA) 75˚C VGS=0.6V 6 0.4V 4 0.2V 0V 2 4 3 2 1 – 0.2V 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 Drain to source voltage VDS (V) | Yfs | VGS | Yfs | ID 12 12 VDS=10V Forward transfer admittance |Yfs| (mS) Forward transfer admittance |Yfs| (mS) ID VGS 12 Drain current ID (mA) Allowable power dissipation PD (mW) 250 10 8 6 4 2 0 –1.6 VDS=25V TC=25˚C 10 8 6 4 2 0 –1.2 – 0.8 – 0.4 0 0.4 Gate to source voltage VGS (V) 2 2SK2751 0 1 2 3 4 5 Drain current ID (mA) 6 0 –1 – 0.6 – 0.2 0.2 0.6 1 Gate to source voltage VGS (V)