Power MOSFETs 2SK3192 Silicon N-channel power MOSFET Unit: mm ■ Features 5.0±0.2 (0.7) 15.0±0.3 21.0±0.5 ■ Applications ■ Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Drain-source surrender voltage VDSS 250 V Gate-source surrender voltage VGSS ±30 V ID ±30 A Peak drain current Avalanche energy capability * Power dissipation IDP ±120 A EAS 925 mJ PD 100 W Ta = 25°C 0.6±0.2 1.1±0.1 10.9±0.5 1 2 1: Gate 2: Drain 3: Source EIAJ: SC-92 TOP-3F-B1 Package 3 Marking Symbol: K3192 Internal Connection 3 Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C Note) *: L = 1.74 mH, IL = 30 A, VDD = 50 V, 1 pulse, Ta = 25°C D G S ■ Electrical Characteristics TC = 25°C ± 3°C Parameter 2.0±0.1 2.0±0.2 5.45±0.3 Symbol Drain current φ 3.2±0.1 16.2±0.5 (3.2) (2.3) Solder Dip • PDP • Switching mode regulator (3.2) 11.0±0.2 15.0±0.2 • Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown Symbol Conditions Drain-source surrender voltage VDSS ID = 1 mA, VGS = 0 Drain-source cutoff current IDSS VDS = 200 V, VGS = 0 Gate-source cutoff current IGSS VGS = ±30 V, VDS = 0 Gate threshold voltage Vth VDS = 10 V, ID = 1 mA Drain-source ON resistance RDS(on) VGS = 10 V, ID = 15 A Forward transfer admittance Yfs VDS = 10 V, ID = 15 A Typ Max Unit 10 µA ±1 µA 4 V 68 mΩ 250 V 2 50 8 15 S 4 200 pF Short-circuit forward transfer capacitance (Common source) Ciss Short-circuit output capacitance (Common source) Coss 1 600 pF Reverse transfer capacitance (Common source) Crss 650 pF Turn-on delay time td(on) VDD = 100 V, ID = 15 A, RL = 6.7 Ω 45 ns VGS = 10 V 115 ns td(off) 330 ns tf 130 ns Rise time Turn-off delay time Fall time Publication date: January 2004 tr VDS = 10 V, VGS = 0, f = 1 MHz Min SJG00029BED 1 2SK3192 ■ Electrical Characteristics (continued) TC = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max IDR = 30 A, VGS = 0 Unit −1.5 Diode forward voltage VDSF Reverse recovery time trr L = 230 µH, VDD = 100 V 260 ns V Reverse recovery charge Qrr IDR = 15 A, di/dt = 100 A/µs 1.6 µC Gate charge load Qg VDD = 100 V, ID = 15 A 95 nC Gate-source charge Qgs VGS = 10 V Gate-drain charge Qgd 34 nC 12 nC Thermal resistance (ch-c) Rth(ch-c) 1.25 °C/W Thermal resistance (ch-a) Rth(ch-a) 41.7 °C/W Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. PD Ta Safe operation area Non repetitive pulse TC = 25°C Power dissipation PD (W) ID DC 10 1 ms 10 ms 1 100 ms ID VDS 30 (1) TC = Ta (2) Without heat sink PD = 3 W (1) 100 t = 100 µs IDP 102 Drain current ID (A) 120 TC = 25°C VGS = 10 V 25 Drain current ID (A) 103 80 60 40 20 20 5V 15 4.5 V 10 5 4V (2) 1 102 10 0 103 0 VGS ID 0 Drain-source ON resistance RDS(on) (mΩ) 40 30 20 10 4 6 8 Drain current ID (A) 10 4 6 8 10 12 14 Drain-source voltage VDS (V) Yfs ID 30 VGS = 10 V TC = 25°C 80 60 40 20 0 0 2 2 RDS(on) ID VDS = 10 V TC = 25°C 0 3V 0 150 100 50 Gate-source voltage VGS (V) 100 Ambient temperature Ta (°C) Drain-source voltage VDS (V) 2 50 Forward transfer admittance Yfs (S) 10−1 0 10 20 Drain current ID (A) SJG00029BED 30 VDS = 10 V TC = 25°C 25 20 15 10 5 0 0 5 10 15 20 25 Drain current ID (A) 30 35 Short-circuit forward transfer capacitance (Common source) Ciss , Short-circuit output capacitance (Common source) Coss , Reverse transfer capacitance (Common source) Crss (pF) 2SK3192 104 Ciss , Coss , Crss VDS f = 1 MHz TC = 25°C 103 102 10 0 Drain-source voltage VDS (V) 20 40 60 80 100 SJG00029BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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