Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.5±0.5 Parameter Symbol Collector to 2SC5270 base voltage 2SC5270A Collector to 2SC5270 base voltage 2SC5270A Ratings 1500 VCBO 1600 1500 VCES 1600 Emitter to base voltage VEBO 5 V Peak collector current ICP 20 A Collector current IC 12 A Base current IB 8 A PC Junction temperature Tj Storage temperature Tstg 3 ■ Electrical Characteristics current 2SC5270 10.0 2 3 23.4 22.0±0.5 26.5±0.5 1:Base 2:Collector 3:Emitter TOP–3E Full Pack Package W 150 ˚C –55 to +150 ˚C Symbol 2SC5270 2SC5270A 5° (TC=25˚C) Parameter Collector cutoff 5.45±0.3 1 V Ta=25°C 0.7±0.1 V 600 dissipation 2.0 1.2 5.45±0.3 V VCEO 120 5° Unit Collector to emitter voltage Collector power TC=25°C 2.0 (TC=25˚C) 5° 5° 5° 4.0 2.0±0.2 1.1±0.1 18.6±0.5 ■ Absolute Maximum Ratings 5° 5.5±0.3 ● 2.0 ● High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 3.3±0.3 0.7±0.1 ● 3.0±0.3 φ3.2±0.1 4.5 ■ Features Conditions min typ 50 VCB = 1000V, IE = 0 ICBO 2SC5270A max 50 VCB = 1500V, IE = 0 1 VCB = 1600V, IE = 0 1 50 Emitter cutoff current IEBO VEB = 5V, IC = 0 Forward current transfer ratio hFE VCE = 5V, IC = 6A Collector to emitter saturation voltage VCE(sat) IC = 6A, IB = 1.5A Base to emitter saturation voltage VBE(sat) IC = 6A, IB = 1.5A Transition frequency fT VCE = 10V, IC = 0.1A, f = 0.5MHz Storage time tstg Fall time tf IC = 6A, IB1 = 1.5A, IB2 = –3A 5 Unit µA mA µA 12 3 1.5 3 V V MHz 1.5 2.5 µs 0.12 0.2 µs 1 Power Transistors 2SC5270, 2SC5270A PC — Ta hFE — IC 80 60 40 20 (2) VCE=5V TC=100˚C 3000 –25˚C 10 2000 1 20 40 60 80 100 120 140 160 1 Ambient temperature Ta (˚C) Area of safe operation (ASO) 1ms Collector current IC (A) Collector current IC (A) t=100µs DC 1 0.1 Non repetitive pulse TC=25˚C 1 3 10 100 300 1000 tstg — IB TC=25˚C 9 IC=6A fH=64kHz 8 7 6 5 4 3 2 1 0 0 1 2 105 3 4 End-of-scan current IB end (A) 0 102 5 103 104 105 Collector current IC (mA) 20 t f — IB 1.0 TC=25˚C IC=6A fH=64kHz 0.6 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 30 10 Switching time tstg (µs) 30 <1mA Collector to emitter voltage VCE (V) 2 40 10 0.01 0.001 104 f=64kHz, TC<90˚C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. 100ms 10ms IC 103 Area of safe operation, horizontal operation ASO 50 10 –25˚C 25˚C Collector current IC (mA) 100 ICP 102 10 2SC5270 2SC5270A 0 TC=100˚C 1000 (3) 0 IC/IB=4 4000 25˚C Switching time tf (µs) 100 5000 Collector to emitter saturation voltage VCE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink. (3) Without heat sink (PC=3.0W) (1) 120 Forward current transfer ratio hFE Collector power dissipation PC (W) VCE(sat) — IC 102 140 0 0 500 1000 1500 2000 Collector to emitter voltage VCE (V) 0 1 2 3 4 End-of-scan current IB end (A) 5