Power Transistors 2SB928, 2SB928A Silicon PNP epitaxial planar type 10.0±0.3 1.5±0.1 0.8±0.1 2.54±0.3 –150 VCEO –180 V Emitter to base voltage VEBO –6 V Peak collector current ICP –3 A Collector current IC –2 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 1.0±0.1 0.8±0.1 R0.5 R0.5 0 to 0.4 2.54±0.3 1.1 max. 30 PC Ta=25°C 6.0±0.3 14.7±0.5 V +0.4 –200 +0 VCBO 3.4±0.3 1.5–0.4 Collector to base voltage Unit: mm 8.5±0.2 10.0±0.3 Unit 2SB928 1:Base 2:Collector 3:Emitter N Type Package 3 2.0 Ratings 4.4±0.5 Symbol emitter voltage 2SB928A 2 (TC=25˚C) Parameter Collector to 0.5max. 5.08±0.5 1 ■ Absolute Maximum Ratings 1.1max. 2.0 High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. 10.5min. 1.5max. 3.0–0.2 ● 1.0±0.1 4.4±0.5 ● Unit: mm 6.0±0.5 ■ Features ● 3.4±0.3 8.5±0.2 For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A 5.08±0.5 W 1.3 150 ˚C –55 to +150 ˚C 1 2 1:Base 2:Collector 3:Emitter N Type Package (DS) 3 (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –200V, IE = 0 –50 µA Emitter cutoff current IEBO VEB = –4V, IC = 0 –50 µA VCBO IC = –500µA, IE = 0 Collector to base voltage Collector to emitter 2SB928 voltage 2SB928A Emitter to base voltage IC = –5mA, IB = 0 VEBO IE = –500µA, IC = 0 –6 * V –150 VCEO hFE1 Forward current transfer ratio –200 V –180 VCE = –10V, IC = –150mA 60 hFE2 VCE = –10V, IC = –400mA 50 V 240 Base to emitter voltage VBE VCE = –10V, IC = –400mA –1 V Collector to emitter saturation voltage VCE(sat) IC = –500mA, IB = –50mA –1 V Transition frequency fT VCE = –10V, IC = – 0.5A, f = 10MHz *h FE1 30 MHz Rank classification Rank Q P hFE1 60 to 140 100 to 240 Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification. 1 Power Transistors 2SB928, 2SB928A PC — Ta IC — VCE 40 IC — VBE –600 –2.0 –500 –4.0mA –3.5mA –400 –3.0mA –2.5mA –300 20 –2.0mA –200 10 –1.0mA 20 40 60 80 100 120 140 160 –2 –4 –8 –10 –12 0 hFE — IC 25˚C –25˚C – 0.1 – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 300 1000 TC=100˚C 25˚C 100 –25˚C 30 10 3 Collector current IC (A) –1 –3 Area of safe operation (ASO) 1ms 5ms – 0.3 300ms 2SB928 –3 –10 –30 2SB928A – 0.1 – 0.03 –100 –300 –1000 Collector to emitter voltage VCE 10 (V) –1 –3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C t=0.5ms –1 30 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 103 IC 100 Collector current IC (A) –10 ICP 300 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –3 (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink (1) 102 (2) 10 1 10–1 10–2 10–4 –1.0 VCE=–10V f=10MHz TC=25˚C 3000 Transition frequency fT (MHz) TC=100˚C – 0.3 – 0.8 VCE=–10V 1000 –1 – 0.6 fT — IC 3000 –3 – 0.4 10000 IC/IB=10 –10 – 0.2 Base to emitter voltage VBE (V) 10000 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –6 Collector to emitter voltage VCE (V) VCE(sat) — IC Collector current IC (A) –25˚C 0 0 Ambient temperature Ta (˚C) – 0.01 –1 –1.2 – 0.4 0 –3 25˚C TC=100˚C – 0.5mA (3) 0 –1.6 – 0.8 –1.5mA –100 (2) 0 2 Collector current IC (A) (1) 30 VCE=–10V IB=–4.5mA Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink (PC=1.3W) 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 –10