TISP3xxxT3BJ

*R
oH
S
CO
M
PL
IA
NT
TISP3070T3BJ THRU TISP3395T3BJ
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
The TISP3xxxT3BJ series
is obsolete and not
recommended for new designs.
TISP3xxxT3BJ Overvoltage Protector Series
Dual High Current Protectors in a Space Efficient
Package
- 2 x 100 A 10/560 Current Rating
- Modified 3-pin SMB (DO-214AA) Package
50 % Space Saving over Two SMBs
- Y Configurations with Two SMB Packages
2 x 80 A, 10/1000 . . . .TISP3xxxT3BJ + TISP4xxxJ1BJ
2 x 100 A, 10/700 . . . .TISP3xxxT3BJ + TISP4xxxH3BJ
SMB Package (Top View)
1
2
3
MDXXCJA
Device Symbol
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
VDRM
Device
TISP3070T3
TISP3080T3
TISP3095T3
1
(T or R)
V(BO)
E
T
E
L
O
S
B
O
V
V
58
70
65
80
75
95
90
115
TISP3125T3
100
125
TISP3145T3
120
145
TISP3165T3
135
165
TISP3180T3
145
180
TISP3200T3
155
200
TISP3219T3
180
219
TISP3250T3
190
250
TISP3290T3
220
290
TISP3350T3
275
350
TISP3115T3
TISP3395T3
3
(T or R)
320
SD3TA A
2
(G)
Rated for International Surge Wave Shapes
Wave Shape
395
.......................................UL Recognized Component
Standard
IPPSM
A
2/10
GR-1089-CORE
250
8/20
IEC 61000-4-5
250
10/160
TIA/EIA-IS-968 (FCC Part 68)
150
10/700
ITU-T K.20/.21/.45
120
10/560
TIA/EIA-IS-968 (FCC Part 68)
100
10/1000
GR-1089-CORE
80
Description
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the
telecom line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have
been specified mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC
60950, ITU-T K.20, K.21 and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (VDRM = ±275 V). Housed
in a 3-pin modified SMB (DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less
which use multiple SMBs.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above
VDRM are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device
switches into a low-voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted
current falls below the holding current, IH, level the device switches off and restores normal system operation.
How To Order
Device
Package
Carrier
Order As
TISP3xxxT3BJ
BJ (3-pin modified SMB/DO-214AA J-Bend)
R (Embossed Tape Reeled)
TISP3xxxT3BJR-S
Insert xxx value corresponding to protection voltages of 070, 080, 095, 115, etc.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
SEPTEMBER 2001 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Rating
Symbol
±58
’3080
±65
’3095
±75
’3115
±90
’3125
±100
’3145
±120
’3165
Repetitive peak off-state voltage, (terminals 1-2 and 3-2)
Value
’3070
’3180
±135
VDRM
±145
’3200
±155
’3219
±180
’3250
±190
’3290
±220
’3350
±275
’3395
±320
E
T
E
L
O
S
B
O
Unit
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wav e shape)
2x250
8/20 (IEC 61000-4-5, combinat ion wave generator, 1.2/50 voltage wave shape)
2x2 50
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 μs voltage wave shape)
5/310 (ITU-T K.44, 10/700 μs voltage wave shape used in K.20/.45/.21)
IPPSM
2x1 50
2x1 20
5/320 (TIA/EIA-IS-968 (replaces FCC Part 68), 9/720 μs voltage wave shape)
2x1 20
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 μs voltage wave shape)
2x1 00
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape)
2x80
A
Non-repetitive peak on-state current (see Notes 1 and 2)
50 Hz, 1 cycle
60 Hz, 1 cycle
1000 s 50 Hz/60 Hz a.c.
2x25
ITSM
Initial rate of rise of on-s tate current, Linear current ramp, Maximum ramp value < 50 A
Junction temperature
Storage temperature range
2x30
A
2x1.2
di T/dt
500
A/μs
TJ
-40 to +150
°C
Tstg
-65 to +150
°C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and
3 simultaneously (in this case the terminal 2 return current will be the sum of the currents applied to the terminals 1 and 3). The
surge may be repeated after the device returns to its initial conditions.
Recommended Operating Conditions
Component
Series resistor for GR-1089-CORE first-level surge survival
Min
5
Series resistor for ITU-T recommendation K. 20/.45/.21 (coordination with 400 V GDT at 4 kV)
6.4
R1, R2 Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 9/720 survival
0
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/560 survival
0
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/160 survival
2.5
Typ
Max
Unit
Ω
SEPTEMBER 2001 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C
Parameter
IDRM
Repetitive peak offstate current
V(BO) AC breakover voltage
V(BO)
I(BO)
IH
dv/dt
ID
Test Conditions
VD = VDRM
dv/dt = ±250 V/ms,
R SOURCE = 300 Ω
Min
Typ
Max
TA = 25 °C
±5
TA = 85 °C
±10
’3070
±70
’3080
±80
’3095
±95
’3115
±115
’3125
±125
’3145
±145
’3165
±165
’3180
±180
’3200
±200
’3219
±219
’3250
±250
’3290
±290
’3350
±350
’3395
±395
’3070
±81
E
T
E
L
O
S
B
O
’3080
±91
’3095
±107
’3115
±128
’3125
±138
dv/dt ≤±1000 V/μs, Linear voltage ramp,
’3145
±159
Ramp breakover
Maximum ramp value = ±500 V
’3165
±179
voltage
di/dt = ±20 A/μs, Linear current ramp,
’3180
±195
Maximum ramp value = ±10 A
’3200
±215
’3219
±234
’3250
±265
’3290
±304
’3350
±361
’3395
±403
Breakover current
dv/dt = ± 250 V/ms, R SOURCE = 300 Ω
Holding current
IT = ±5A, di/dt = +/-30 mA/ms
±150
Linear voltage ramp, Maximum ramp value < 0.85V DRM
±5
Critical rate of rise of
off-state voltage
Off-state current
VD = ±50 V
SEPTEMBER 2001 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
±800
TA = 85 °C
Unit
μA
V
V
mA
mA
kV/μs
±10
μA
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C (Continued)
Parameter
Test Conditions
Min
‘3070 thru ‘3095
f = 1 MHz, Vd = 1 V rms, VD = 0,
‘3115 thru ‘3219
‘3250 thru ‘3395
f = 1 MHz, Vd = 1 V rms, VD = -1 V
Coff
Off-state capacitance
f = 1 MHz, Vd = 1 V rms, VD = -2 V
f = 1 MHz, Vd = 1 V rms, VD = -50 V
NOTE
Parameter
NOTE
95
114
69
83
62
‘3070 thru ‘3095
90
108
‘3115 thru ‘3219
63
76
‘3250 thru ‘3395
46
55
‘3070 thru ‘3095
83
100
‘3115 thru ‘3219
59
70
‘3250 thru ‘3395
42
51
‘3070 thru ‘3095
43
51
‘3115 thru ‘3219
29
35
‘3250 thru ‘3395
20
24
16
19
E
T
E
L
O
S
B
O
Unit
pF
3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
third terminal is connected to the guard terminal of the bridge.
Thermal Characteristics
R θJA
Max
51
‘3250 thru ‘3395
f = 1 MHz, Vd = 1 V rms, VD = -100 V
(see Note 3)
Typ
Junction to free air thermal resistance
Test Conditions
EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 4)
Min
Typ
Max
Unit
90
°C/W
4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
SEPTEMBER 2001 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Parameter Measurement Information
+i
Quadrant I
IPPSM
Switching
Characteristic
ITSM
IT
V(BO)
VT
IH
-v
VDRM
IDRM
ID
VD
ID
IDRM
VD
VDRM
E
T
E
L
O
S
B
O
+v
IH
V(BO)
VT
IT
ITSM
Quadrant III
Switching
Characteristic
IPPSM
-i
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2
All Measurements are Referenced to Terminal 2
SEPTEMBER 2001 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
PM4XAE
TISP3xxxT3BJ Overvoltage Protector Series
Typical Characteristics
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
10
TC4AH3AA
1.15
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE TC4AH3AB
Normalized Breakover Voltage
|ID| - Off-State Current - μA
VD = ±50 V
1
0·1
0·01
0·001
'3070 thru '3095
1.05
'3250 thru '3395
1.00
E
T
E
L
O
S
B
O
0.95
0.90
-25
'3115 thru '3219
1.10
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
-25
Figure 2.
100
TA = 25 °C
t W = 100 μs
TC3T3AA
Normalized Holding Current
IT - On-State Current - A
2.0
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE TC4AH3AC
1.5
70
50
40
30
20
15
10
7
5
4
3
1.0
0.9
0.8
0.7
0.6
0.5
2
1.5
1
0.7
150
Figure 3.
ON-STATE CURRENT
vs
ON-STATE VOLTAG E
200
150
0
25
50
75
100 125
TJ - Junction Temperature - °C
0.4
1
1.5 2
3 41 5
7
VT - On-State Voltage - V
Figure 4.
0
15 20
-25
0
25
50
75
100 125
TJ - Junction Temperature - °C
150
Figure 5.
SEPTEMBER 2001 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Rating and Thermal Information
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TI3TAA
20
VGEN = 600 V rms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB, TA = 25 °C
15
10
9
8
7
6
5
3
0.98
0.97
0.96
'3070
thru
0.95
'3095
'3115
thru
'3219
E
T
E
L
O
S
B
O
0.94
2
1.5
1
0·1
0.99
SIMULTANEOUS OPERATION
OF R AND T TERMINALS. G
TERMINAL CURRENT = 2xI TSM(t)
4
TI4AH3AB
1.00
Derating Factor
ITSM(t) - Non-Repetivive Peak On-State Current - A
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
0.93
1
10
100
t - Current Duration - s
Figure 8.
1000
'3250
thru
'3395
0.92
-40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
TAMIN - Minimum Ambient Temperature - °C
Figure 9.
SEPTEMBER 2001 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
MECHANICAL DATA
Recommended Printed Wiring Land Pattern Dimensions
SMB03 Pad Size
2.50
(.099)
1.00
(.039)
2.80
(.110)
0.80
(.032)
E
T
E
L
O
S
B
O
1.75
(.069)
1.75
(.069)
DIMENSIONS ARE:
MILLIMETERS
(INCHES)
Device Symbolization Code
Devices will be coded as below.
Device
MD3BJAAA
Symbolization Code
TISP3070T3
3070T3
TISP3080T3
3080T3
TISP3095T3
3095T3
TISP3115T3
3115T3
TISP3125T3
3125T3
TISP3145T3
3145T3
TISP3165T3
3165T3
TISP3180T3
3180T3
TISP3200T3
3200T3
TISP3219T3
3219T3
TISP3250T3
3250T3
TISP3290T3
3290T3
TISP3350T3
3350T3
TISP3395T3
3395T3
Carrier Information
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed
tape.
Package
SMB
Carrier
Embossed Tape Reel Pack
Standard Quantity
3000
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
SEPTEMBER 2001 - REVISED MAY 2011
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bourns Sales Offices
Region
Phone
Fax
The Americas:
+1-909-781-5500
+1-909-781-5700
Europe:
+41(0)41-7685555
+41(0)41-7685510
Asia-Pacific:
+886-2-25624117
+886-2-25624116
E
T
E
L
O
S
B
O
Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
Phone
Fax
+1-951-781-5500
+1-951-781-5700
+41(0)41-7685555
+41(0)41-7685510
+886-2-25624117
+886-2-25624116
www.bourns.com
Bourns® products are available through an extensive network of manufacturer’s representatives, agents and distributors.
To obtain technical applications assistance, a quotation, or to place an order, contact a Bourns representative in your area.
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in the U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.