Power Transistors 2SC3874 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7 V Peak collector current ICP 25 A Collector current IC 15 A Base current IB 5 A Collector power TC=25°C dissipation Ta=25°C 150 PC Junction temperature Tj Storage temperature Tstg 4.0 10.0 2.0 2.0 1.5 2.0±0.3 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package W 3.5 ■ Electrical Characteristics 1.5 Solder Dip ● 26.0±0.5 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 1.5 ● 20.0±0.5 2.5 ● 6.0 ■ Features 3.0 20.0±0.5 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 400 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 10A 8 Collector to emitter saturation voltage VCE(sat) IC = 10A, IB = 2A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 10A, IB = 2A 1.5 V Transition frequency fT VCE = 10V, IC = 1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 500V, IE = 0 max Collector cutoff current IC = 10A, IB1 = 2A, IB2 = –4A, VCC = 150V V 20 MHz 0.7 µs 2.0 µs 0.3 µs 1 Power Transistors 2SC3874 (1) 125 100 75 50 TC=25˚C 16 1A 0.8A 12 0.6A 8 0.4A 0.3A 0.2A 4 25 (2) 0.1A (3) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 25˚C 0.03 1 3 300 100 –25˚C 10 3 0.3 1 3 10 Switching time ton,tstg,tf (µs) 100 30 10 3 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=150V TC=25˚C 10 VCE=10V f=1MHz TC=25˚C 300 100 30 10 3 1 100 Collector to base voltage VCB (V) 0.1 0.3 1 3 10 3 tstg 1 0.3 ton 0.1 30 ICP 10 IC Non repetitive pulse TC=25˚C t=0.5ms tf 1ms 10ms DC 3 1 0.3 0.1 0.03 0.01 0.01 30 10 Area of safe operation (ASO) 0.03 10 3 100 30 300 1 Collector current IC (A) ton, tstg, tf — IC 1000 3 0.3 Collector current IC (A) IE=0 f=1MHz TC=25˚C 1 0.01 0.1 0.1 0.01 0.03 30 100 0.3 0.03 0.3 Cob — VCB Collector output capacitance Cob (pF) 25˚C TC=100˚C 30 1 0.1 10 10000 1 0.1 –25˚C 0.1 VCE=5V Collector current IC (A) 3000 25˚C 0.3 Collector current IC (A) Transition frequency fT (MHz) TC=–25˚C 0.3 TC=100˚C 1 fT — IC 1000 0.1 0.01 0.1 3 1000 3000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) IC/IB=5 100˚C 0.3 10 IC/IB=5 hFE — IC 3 1 8 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 10 6 Collector current IC (A) 0 2 VCE(sat) — IC IB=2A Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) 175 150 IC — VCE 20 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 200 0 5 10 15 20 Collector current IC (A) 25 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC3874 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 40 Collector current IC (A) L coil Lcoil=200µH IC/IB=5 (2IB1=–IB2) TC=25˚C Clamped 35 30 IB1 T.U.T IC ICP 25 –IB2 Vin 20 VCC IC 15 10 Vclamp tW 5 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 102 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink (1) 10 (2) 1 10–1 10–2 10–3 10–2 10–1 1 10 102 103 104 105 Time t (s) 3