BD243, BD243A, BD243B, BD243C

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BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 5)
BD243
45
BD243A
60
BD243B
80
BD243C
100
TYP
MAX
V
VCE = 55 V
VBE = 0
BD243
0.4
Collector-emitter
VCE = 70 V
VBE = 0
BD243A
0.4
cut-off current
VCE = 90 V
VBE = 0
BD243B
0.4
VCE = 115 V
VBE = 0
BD243C
0.4
Collector cut-off
VCE = 30 V
IB = 0
BD243/243A
0.7
current
VCE = 60 V
IB = 0
BD243B/243C
0.7
VEB =
5V
IC = 0
Forward current
VCE =
4V
IC = 0.3 A
transfer ratio
VCE =
4V
IC =
3A
IB =
1A
IC =
6A
VCE =
4V
IC =
6A
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
UNIT
mA
mA
1
mA
(see Notes 5 and 6)
1.5
V
(see Notes 5 and 6)
2
V
(see Notes 5 and 6)
30
15
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VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.92
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 1 A
IB(on) = 0.1 A
IB(off) = -0.1 A
toff
Turn-off time
VBE(off) = -3.7 V
RL = 20 Ω
tp = 20 µs, dc ≤ 2%
0.3
µs
1
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED NOVEMBER 2012
Specifications are subject to change without notice.
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS633AH
hFE - DC Current Gain
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1·0
0·1
TCS633AE
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
1000
IC = 300 mA
IC = 1 A
IC = 3 A
IC = 6 A
1·0
0·1
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1·0
0·01
0·001
10
IC - Collector Current - A
0·01
0·1
1·0
10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·2
TCS633AF
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
1·1
1·0
0·9
0·8
0·7
0·6
0·1
1·0
10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED NOVEMBER 2012
Specifications are subject to change without notice.
3
BD243, BD243A, BD243B, BD243C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS633AD
tp = 300 µs, d = 0.1 = 10%
tp = 1 ms, d = 0.1 = 10%
tp = 10 ms, d = 0.1 = 10%
DC Operation
10
1·0
0·1
BD243
BD243A
BD243B
BD243C
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0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AB
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED NOVEMBER 2012
Specifications are subject to change without notice.
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