BD543, BD543A, BD543B, BD543C

BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD544 Series
TO-220 PACKAGE
(TOP VIEW)
70 W at 25°C Case Temperature
8 A Continuous Collector Current
10 A Peak Collector Current
B
1
C
2
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
This series is obsolete and
not recommended for new designs.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BD543
Collector-base voltage (IE = 0)
BD543A
V CBO
BD543C
BD543
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
BD543A
BD543B
BD543C
V CEO
VEBO
Lead temperature 3.2 mm from case for 10 seconds
V
100
40
60
80
100
V
ICM
10
A
Ptot
2
Operating free air temperature range
Operating junction temperature range
80
V
Ptot
Storage temperature range
60
5
IC
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
UNIT
40
E
T
E
L
O
S
B
O
BD543B
VALUE
8
A
70
W
TA
-65 to +150
°C
Tstg
-65 to +150
Tj
TL
-65 to +150
260
W
°C
°C
°C
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 4)
BD543
40
BD543A
60
BD543B
80
BD543C
100
TYP
MAX
V
VCE = 40 V
VBE = 0
BD543
0.4
Collector-emitter
VCE = 60 V
VBE = 0
BD543A
0.4
cut-off current
VCE = 80 V
VBE = 0
BD543B
0.4
VCE = 100 V
VBE = 0
BD543C
0.4
Collector cut-off
VCE = 30 V
IB = 0
BD543/543A
0.7
current
VCE = 60 V
IB = 0
BD543B/543C
0.7
VEB =
5V
IC = 0
VCE =
4V
IC = 1 A
VCE =
4V
IC =
3A
VCE =
4V
IC =
5A
IB =
0.3 A
IC =
3A
IB =
1A
IC =
5A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
1
1.6 A
IC =
8A
4V
IC =
5A
VCE =
mA
mA
mA
60
(see Notes 4 and 5)
40
15
0.5
(see Notes 4 and 5)
0.5
E
T
E
L
O
S
B
O
IB =
UNIT
(see Notes 4 and 5)
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
V
1
1.4
V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.79
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 6 A
IB(on) = 0.6 A
IB(off) = -0.6 A
toff
Turn-off time
VBE(off) = -4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.6
µs
1
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS633AI
hFE - DC Current Gain
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1·0
0·1
TCS633AE
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
1000
IC = 300 mA
IC = 1 A
IC = 3 A
IC = 6 A
1·0
0·1
E
T
E
L
O
S
B
O
1·0
0·01
0·001
10
IC - Collector Current - A
0·01
0·1
1·0
10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·2
TCS633AF
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
1·1
1·0
0·9
0·8
0·7
0·6
0·1
1·0
10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS633AF
1·0
0·1
BD543
BD543A
BD543B
BD543C
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AD
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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