BD544, BD544A, BD544B, BD544C

BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD543 Series
TO-220 PACKAGE
(TOP VIEW)
70 W at 25°C Case Temperature
8 A Continuous Collector Current
10 A Peak Collector Current
B
1
C
2
Customer-Specified Selections Available
E
3
Pin 2 is in electrical contact with the mounting base.
This series is OBSOLETEAND
not recommended for new designs.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BD544
Collector-base voltage (IE = 0)
BD544A
V CBO
BD544C
BD544
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
Peak collector current (see Note 1)
BD544A
BD544B
BD544C
V CEO
VEBO
IC
ICM
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
Operating free air temperature range
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
UNIT
-40
E
T
E
L
O
S
B
O
BD544B
VALUE
-60
-80
V
-100
-40
-60
-80
-100
-5
-8
-10
V
V
A
A
70
W
TA
-65 to +150
°C
Tstg
-65 to +150
Ptot
Tj
TL
2
-65 to +150
260
W
°C
°C
°C
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = -30 mA
MIN
IB = 0
(see Note 4)
BD544
-40
BD544A
-60
BD544B
-80
BD544C
-100
TYP
MAX
V
VCE = -40 V
VBE = 0
BD544
-0.4
Collector-emitter
VCE = -60 V
VBE = 0
BD544A
-0.4
cut-off current
VCE = -80 V
VBE = 0
BD544B
-0.4
VCE = -100 V
VBE = 0
BD544C
-0.4
Collector cut-off
VCE = -30 V
IB = 0
BD544/544A
-0.7
current
VCE = -60 V
IB = 0
BD544B/544C
-0.7
VEB =
-5 V
IC = 0
VCE =
-4 V
IC =
-1 A
VCE =
-4 V
IC =
-3 A
VCE =
-4 V
IC =
-5 A
IB =
-0.3 A
IC =
-3 A
IB =
-1 A
IC =
-5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
-1
-1.6 A
IC =
- 8A
-4 V
IC =
-5 A
VCE =
mA
mA
mA
60
(see Notes 4 and 5)
40
15
-0.5
(see Notes 4 and 5)
-0.5
E
T
E
L
O
S
B
O
IB =
UNIT
(see Notes 4 and 5)
VCE = -10 V
IC = -0.5 A
f = 1 kHz
20
VCE = -10 V
IC = -0.5 A
f = 1 MHz
3
V
-1
-1.4
V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.79
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = -6 A
IB(on) = -0.6 A
IB(off) = 0.6 A
0.4
µs
toff
Turn-off time
VBE(off) = 4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.7
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS634AI
VCE = -4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1·0
-0·1
TCS634AE
-10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC = -300 mA
IC = -1 A
IC = -3 A
IC = -6 A
-1·0
-0·1
E
T
E
L
O
S
B
O
-1·0
-10
-0·01
-0·001
IC - Collector Current - A
-0·01
-0·1
-1·0
-10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
-1·2
TCS634AF
VBE - Base-Emitter Voltage - V
VCE = -4 V
TC = 25°C
-1·1
-1·0
-0·9
-0·8
-0·7
-0·6
-0·1
-1·0
-10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD544, BD544A, BD544B, BD544C
PNP SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-10
SAS634AF
-1·0
-0·1
BD544
BD544A
BD544B
BD544C
E
T
E
L
O
S
B
O
-0·01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AD
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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