BD545, BD545A, BD545B, BD545C

BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD546 Series
●
85 W at 25°C Case Temperature
●
15 A Continuous Collector Current
●
Customer-Specified Selections Available
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
E
T
E
L
O
S
B
O
Collector-emitter voltage (IB = 0) (see Note 1)
BD545B
V CBO
60
80
BD545C
100
BD545
40
BD545A
BD545B
UNIT
40
BD545
BD545A
VALUE
VCEO
BD545C
60
80
V
V
100
VEBO
5
IC
15
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
85
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
Operating free air temperature range
TA
-65 to +150
°C
°C
Emitter-base voltage
Continuous collector current
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.68 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 4)
BD545
40
BD545A
60
BD545B
80
BD545C
100
TYP
MAX
V
VCE = 40 V
VBE = 0
BD545
0.4
Collector-emitter
VCE = 60 V
VBE = 0
BD545A
0.4
cut-off current
VCE = 80 V
VBE = 0
BD545B
0.4
VCE = 100 V
VBE = 0
BD545C
0.4
Collector cut-off
VCE = 30 V
IB = 0
BD545/545A
0.7
current
VCE = 60 V
IB = 0
BD545B/545C
0.7
VEB =
5V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
1
VCE =
4V
IC =
1A
VCE =
4V
IC =
5A
VCE =
4V
IC = 10 A
Collector-emitter
IB = 625 mA
IC =
saturation voltage
IB =
IC = 10 A
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
2A
mA
mA
mA
60
(see Notes 4 and 5)
25
10
5A
0.8
(see Notes 4 and 5)
1
E
T
E
L
O
S
B
O
VCE =
UNIT
4V
IC = 10 A
(see Notes 4 and 5)
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
1.8
V
V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.47
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 6 A
IB(on) = 0.6 A
IB(off) = -0.6 A
toff
Turn-off time
VBE(off) = -4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.6
µs
1
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS633AJ
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1·0
0·1
TCS633AB
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - DC Current Gain
1000
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
IC =
IC =
IC =
IC =
1·0
0·1
E
T
E
L
O
S
B
O
1·0
0·01
0·01
10
1A
3A
6A
10 A
IC - Collector Current - A
0·1
1·0
10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·8
TCS633AC
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
1·6
1·4
1·2
1·0
0·8
0·6
0·1
1
10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAS633AE
10
1·0
0·1
BD545
BD545A
BD545B
BD545C
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AC
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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