BD645, BD647, BD649, BD651

BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
RoHS compliant*
Designed for Complementary Use with
BD646, BD648, BD650 and BD652
62.5 W at 25°C Case Temperature
TO-220 PACKAGE
(TOP VIEW)
8 A Continuous Collector Current
B
1
C
2
Minimum hFE of 750 at 3V, 3 A
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
BD645
BD647
Collector-base voltage (IE = 0)
SYMBOL
V CBO
E
T
E
L
O
S
B
O
BD649
BD651
BD645
Collector-emitter voltage (IB = 0)
BD647
BD649
BD651
Emitter-base voltage
Continuous collector current
V CEO
VEBO
IC
VALUE
80
UNIT
100
120
V
140
60
80
100
120
V
5
V
12
A
8
A
Peak collector current (see Note 1)
ICM
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
62.5
W
½LIC2
50
mJ
Continuous base current
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
NOTES: 1.
2.
3.
4.
IB
Ptot
0.3
2
Tj
-65 to +150
TL
260
Tstg
-65 to +150
A
W
°C
°C
°C
This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
How to Order
Device
Package
BDxxx
TO-220
Carrier
Order As
Tube
.BDxxx-S
Insert xxx transistor type number 645, 647, 649, etc.
MAY 1993 - REVISED JUNE 2013
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
1
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
TEST CONDITIONS
ICBO
current
hFE
VCE(sat)
VBE(sat)
VBE(on)
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
100
VCE = 30 V
IB = 0
BD645
IB = 0
BD649
VCE = 40 V
IB = 0
VCE = 60 V
IB = 0
VCE = 50 V
IE = 0
VCB = 120 V
IE = 0
VCB = 100 V
VCB = 40 V
VCB = 70 V
(see Note 5)
BD651
TYP
MAX
80
120
0.5
0.5
0.5
BD651
0.2
0.2
BD647
0.2
BD649
IE = 0
TC = 150°C
IE = 0
TC = 150°C
IE = 0
TC = 150°C
IE = 0
TC = 150°C
VEB =
5V
IC = 0
VCE =
3V
IC =
3A
0.2
BD651
2.0
BD645
mA
2.0
BD647
2.0
BD649
2.0
BD651
(see Notes 5 and 6)
E
T
E
L
O
S
B
O
(see Notes 5 and 6)
mA
0.5
BD645
IE = 0
UNIT
V
BD647
IE = 0
VCB = 80 V
VCB = 60 V
IEBO
BD649
BD647
IB = 0
VCB = 50 V
Emitter cut-off
60
IC = 30 mA
VCB = 60 V
Collector cut-off
MIN
BD645
5
mA
750
2
IB =
12 mA
IC =
3A
IB =
50 mA
IC =
5A
(see Notes 5 and 6)
3
V
IC =
3A
(see Notes 5 and 6)
2.5
V
IB =
VCE =
50 mA
3V
IC =
5A
(see Notes 5 and 6)
2.5
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
RθJA
2
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
2.0
°C/W
62.5
°C/W
MAY 1993 - REVISED JUNE 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TCS130AD
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
100
0·5
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
hFE - Typical DC Current Gain
50000
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCS130AB
tp = 300 µs, duty cycle < 2%
IB = I C / 100
1·5
1·0
E
T
E
L
O
S
B
O
VCE = 3 V
tp = 300 µs, duty cycle < 2%
1·0
2·0
10
0·5
0·5
IC - Collector Current - A
1·0
10
IC - Collector Current - A
Figure 1.
Figure 2.
3·0
VBE(sat) - Base-Emitter Saturation Voltage - V
TC = -40°C
TC = 25°C
TC = 100°C
2·5
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AC
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
0·5
0·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
1·0
10
IC - Collector Current - A
Figure 3.
MAY 1993 - REVISED JUNE 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
3
BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS130AC
1·0
0·1
BD645
BD647
BD649
BD651
E
T
E
L
O
S
B
O
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AC
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
MAY 1993 - REVISED JUNE 2013
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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