BD896, BD898, BD900, BD902

BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BD895, BD897, BD899 and BD901
●
70 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 3A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BD896
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BD898
V CBO
-80
BD902
-100
-45
BD900
V CEO
BD902
Emitter-base voltage
-60
BD896
BD898
UNIT
-45
E
T
E
L
O
S
B
O
BD900
VALUE
-60
-80
V
V
-100
VEBO
-5
IC
-8
A
IB
-0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
70
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Operating free-air temperature range
TA
-65 to +150
°C
Operating junction temperature range
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Continuous collector current
Continuous base current
Storage temperature range
V
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
VEC
Collector-emitter
TEST CONDITIONS
MIN
BD896
-45
BD898
-60
BD900
-80
BD902
-100
TYP
MAX
V
IC = -100 mA
IB = 0
VCE = -30 V
IB = 0
BD896
-0.5
Collector-emitter
VCE = -30 V
IB = 0
BD898
-0.5
cut-off current
VCE = -40 V
IB = 0
BD900
-0.5
breakdown voltage
(see Note 3)
VCE = -50 V
IB = 0
BD902
-0.5
VCB = -45 V
IE = 0
BD896
-0.2
VCB = -60 V
IE = 0
BD898
-0.2
VCB = -80 V
IE = 0
BD900
-0.2
Collector cut-off
VCB = -100 V
IE = 0
BD902
-0.2
current
VCB = -45 V
IE = 0
TC = 100°C
BD896
-2
VCB = -60 V
IE = 0
TC = 100°C
BD898
-2
VCB = -80 V
IE = 0
TC = 100°C
BD900
-2
VCB = -100 V
IE = 0
TC = 100°C
BD902
-2
VEB =
-5 V
IC = 0
(see Notes 3 and 4)
VCE =
-3 V
IC = -3 A
(see Notes 3 and 4)
-12 mA
IC = -3 A
-3 V
IC = -3 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
VCE =
IE =
-8 A
mA
mA
-2
mA
(see Notes 3 and 4)
-2.5
V
(see Notes 3 and 4)
-2.5
V
-3.5
V
E
T
E
L
O
S
B
O
IB =
UNIT
750
IB = 0
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.79
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = -3 A
IB(on) = -12 mA
IB(off) = 12 mA
1
µs
toff
Turn-off time
VBE(off) = 3.5 V
RL = 10 Ω
tp = 20 µs, dc ≤ 2%
5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS135AD
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
-1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
-1·5
-1·0
E
T
E
L
O
S
B
O
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
TCS135AB
-2·0
-10
-0·5
-0·5
IC - Collector Current - A
-1·0
TC = -40°C
TC = 25°C
TC = 100°C
-10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS135AC
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD896, BD898, BD900, BD902
PNP SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
-10
SAS135AD
-1·0
-0·1
BD896
BD898
BD900
BD902
E
T
E
L
O
S
B
O
-0.01
-1·0
-10
-100
-1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AB
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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