BDV64, BDV64A, BDV64B, BDV64C

BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDV65, BDV65A, BDV65B and BDV65C
●
125 W at 25°C Case Temperature
●
12 A Continuous Collector Current
●
Minimum hFE of 1000 at 4 V, 5 A
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
E
T
E
L
O
S
B
O
BDV64B
V CBO
-120
BDV64
-60
BDV64B
VCEO
BDV64C
Emitter-base voltage
Continuous collector current
-80
-100
BDV64C
BDV64A
UNIT
-60
BDV64
BDV64A
VALUE
-80
-100
V
V
-120
VEBO
-5
V
IC
-12
A
ICM
-15
A
IB
-0.5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
125
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
3.5
W
°C
Peak collector current (see Note 1)
Continuous base current
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
NOTES: 1. This value applies for tp ≤ 0.1 ms, duty cycle ≤ 10%
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
BDV64
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE
VEC
Collector-emitter
MAX
BDV64A
-80
BDV64B
-100
BDV64C
-120
IC = -30 mA
IB = 0
VCB = -30 V
IB = 0
BDV64
-2
Collector-emitter
VCB = -40 V
IB = 0
BDV64A
-2
cut-off current
VCB = -50 V
IB = 0
BDV64B
-2
breakdown voltage
(see Note 4)
TYP
V
VCB = -60 V
IB = 0
BDV64C
VCB = -60 V
IE = 0
BDV64
-0.4
VCB = -80 V
IE = 0
BDV64A
-0.4
VCB = -100 V
IE = 0
BDV64B
-0.4
Collector cut-off
VCB = -120 V
IE = 0
BDV64C
-0.4
current
VCB = -30 V
IE = 0
TC = 150°C
BDV64
-2
VCB = -40 V
IE = 0
TC = 150°C
BDV64A
-2
VCB = -50 V
IE = 0
TC = 150°C
BDV64B
-2
VCB = -60 V
IE = 0
TC = 150°C
BDV64C
-2
VEB =
-5 V
IC = 0
VCE =
-4 V
IC = -5 A
(see Notes 4 and 5)
-20 mA
IC = -5 A
-4 V
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Parallel diode
forward voltage
VCE =
IE =
-10 A
mA
-2
mA
-5
mA
(see Notes 4 and 5)
-2
V
IC = -5 A
(see Notes 4 and 5)
-2.5
V
IB = 0
(see Notes 4 and 5)
-3.5
V
E
T
E
L
O
S
B
O
IB =
UNIT
-60
1000
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
TYP
MAX
UNIT
1
°C/W
35.7
°C/W
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS145AD
10000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
1000
-1·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
-1·5
-1·0
-0·5
E
T
E
L
O
S
B
O
VCE = -4 V
tp = 300 µs, duty cycle < 2%
100
-0·5
TCS145AE
-2·0
-10
-20
0
-0·5
-1·0
IC - Collector Current - A
TC = -40°C
TC = 25°C
TC = 100°C
-10
-20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS145AF
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
TC = -40°C
TC = 25°C
-2·5 TC = 100°C
-2·0
-1·0
-1·5
-0·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0
-0·5
-1·0
-10
-20
IC - Collector Current - A
Figure 3.
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDV64, BDV64A, BDV64B, BDV64C
PNP SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS140AA
Ptot - Maximum Power Dissipation - W
140
120
100
80
60
40
E
T
E
L
O
S
B
O
20
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
4
JUNE 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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