BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D ● 80 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW74B V CBO E T E L O S B O -100 BDW74D -120 BDW74 -45 BDW74B V CEO BDW74C BDW74D Emitter-base voltage -80 BDW74C BDW74A Collector-emitter voltage (IB = 0) (see Note 1) UNIT -60 BDW74A Collector-base voltage (IE = 0) VALUE -45 BDW74 V -60 -80 V -100 -120 VEBO -5 IC -8 A IB -0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W ½LIC2 75 mJ Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C Continuous collector current Continuous base current Unclamped inductive load energy (see Note 4) Operating junction temperature range Operating temperature range Operating free-air temperature range NOTES: 1. 2. 3. 4. V These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = -20 V. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VBE(on) VCE(sat) VEC Collector-emitter breakdown voltage Collector-emitter cut-off current TEST CONDITIONS IC = -30 mA IB = 0 MIN (see Note 5) BDW74 -45 BDW74A -60 BDW74B -80 BDW74C -100 BDW74D -120 TYP MAX V VCE = -30 V IB = 0 BDW74 -0.5 VCE = -30 V IB = 0 BDW74A -0.5 VCE = -40 V IB = 0 BDW74B -0.5 VCE = -50 V IB = 0 BDW74C -0.5 VCE = -60 V IB = 0 BDW74D -0.5 VCB = -45 V IE = 0 BDW74 -0.2 VCB = -60 V IE = 0 BDW74A -0.2 VCB = -80 V IE = 0 BDW74B -0.2 VCB = -100 V IE = 0 BDW74C -0.2 Collector cut-off VCB = -120 V IE = 0 BDW74D -0.2 current VCB = -45 V IE = 0 TC = 150°C BDW74 -5 VCB = -60 V IE = 0 TC = 150°C BDW74A -5 VCB = -80 V IE = 0 TC = 150°C BDW74B -5 VCB = -100 V IE = 0 TC = 150°C BDW74C -5 VCB = -120 V IE = 0 TC = 150°C BDW74D -5 VEB = -5 V IC = 0 VCE = -3 V IC = -3 A VCE = -3 V IC = -8 A VCE = -3 V IC = -3 A IB = -12 mA IC = -3 A IB = -80 mA IC = -8 A Emitter cut-off current Forward current transfer ratio Base-emitter voltage Collector-emitter saturation voltage Parallel diode forward voltage E T E L O S B O IE = -8 A -2 750 (see Notes 5 and 6) UNIT mA mA mA 20000 100 (see Notes 5 and 6) -2.5 -2.5 (see Notes 5 and 6) -4 IB = 0 -3.5 V V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -3 A IB(on) = -12 mA IB(off) = 12 mA 1 µs toff Turn-off time VBE(off) = 3.5 V RL = 10 Ω tp = 20 µs, dc ≤ 2% 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS135AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 -1·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 -1·5 -1·0 E T E L O S B O VCE = -3 V tp = 300 µs, duty cycle < 2% 100 -0·5 TCS135AB -2·0 -10 -0·5 -0·5 IC - Collector Current - A -1·0 TC = -40°C TC = 25°C TC = 100°C -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AC VBE(sat) - Base-Emitter Saturation Voltage - V -3·0 -2·5 TC = -40°C TC = 25°C TC = 100°C -2·0 -1·5 -1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% -0·5 -0·5 -1·0 -10 IC - Collector Current - A Figure 3. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW74, BDW74A, BDW74B, BDW74C, BDW74D PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS135AF -1·0 -0·1 BDW74 BDW74A BDW74B BDW74C BDW74D E T E L O S B O -0.01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.