BDW83, BDW83A, BDW83B, BDW83C, BDW83D

BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDW84, BDW84A, BDW84B, BDW84C and
BDW84D
●
125 W at 25°C Case Temperature
●
15 A Continuous Collector Current
●
Minimum hFE of 750 at 3 V, 6 A
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDW83
E
T
E
L
O
S
B
O
BDW83B
VCBO
BDW83D
120
BDW83
45
BDW83B
VCEO
BDW83D
Continuous collector current
Continuous base current
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Unclamped inductive load energy (see Note 4)
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
NOTES: 1.
2.
3.
4.
80
100
BDW83C
Emitter-base voltage
60
BDW83C
BDW83A
Collector-emitter voltage (IB = 0) (see Note 1)
UNIT
45
BDW83A
Collector-base voltage (IE = 0)
VALUE
V
60
80
V
100
120
VEBO
5
V
IC
15
A
IB
0.5
A
Ptot
125
W
Ptot
3.5
W
½LIC2
100
mJ
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
These values apply when the base-emitter diode is open circuited.
Derate linearly to 150°C case temperature at the rate of 1 W/°C.
Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V.
PRODUCT
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
1
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(on)
VCE(sat)
VEC
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
TEST CONDITIONS
IC = 30 mA
IB = 0
MIN
(see Note 5)
BDW83
45
BDW83A
60
BDW83B
80
BDW83C
100
BDW83D
120
TYP
MAX
V
VCE = 30 V
IB = 0
BDW83
1
VCE = 30 V
IB = 0
BDW83A
1
VCE = 40 V
IB = 0
BDW83B
1
VCE = 50 V
IB = 0
BDW83C
1
VCE = 60 V
IB = 0
BDW83D
VCB = 45 V
IE = 0
BDW83
0.5
VCB = 60 V
IE = 0
BDW83A
0.5
IE = 0
BDW83B
0.5
VCB = 100 V
IE = 0
BDW83C
0.5
Collector cut-off
VCB = 120 V
IE = 0
BDW83D
0.5
current
VCB = 45 V
IE = 0
TC = 150°C
BDW83
5
current
Forward current
transfer ratio
Base-emitter
voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
E
T
E
L
O
S
B
O
VCB = 60 V
IE = 0
TC = 150°C
BDW83A
5
VCB = 80 V
IE = 0
TC = 150°C
BDW83B
5
VCB = 100 V
IE = 0
TC = 150°C
BDW83C
5
VCB = 120 V
IE = 0
TC = 150°C
BDW83D
5
VEB =
5V
IC = 0
VCE =
3V
IC = 6 A
VCE =
3V
IC = 15 A
VCE =
3V
IC = 6 A
IB =
12 mA
IC = 6 A
IB = 150 mA
IC = 15 A
IE =
IB = 0
15 A
2
750
(see Notes 5 and 6)
mA
1
VCB = 80 V
Emitter cut-off
UNIT
mA
mA
20000
100
(see Notes 5 and 6)
2.5
2.5
(see Notes 5 and 6)
4
3.5
V
V
V
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
1
°C/W
35.7
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
TEST CONDITIONS †
PARAMETER
†
MIN
ton
Turn-on time
IC = 10 A
IB(on) = 40 mA
IB(off) = -40 mA
toff
Turn-off time
VBE(off) = -4.2 V
RL = 3 Ω
tp = 20 µs, dc ≤ 2%
0.9
µs
7
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
2
TYP
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS140AG
70000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1·0
0·5
E
T
E
L
O
S
B
O
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS140AH
2·0
10
20
0
0·5
1·0
IC - Collector Current - A
TC = -40°C
TC = 25°C
TC = 100°C
10
20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS140AI
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
TC = -40°C
TC = 25°C
2·5 TC = 100°C
2·0
1·5
1·0
0·5
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0
0·5
1·0
10
20
IC - Collector Current - A
Figure 3.
PRODUCT
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
3
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
10
1
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
E
T
E
L
O
S
B
O
0.1
1
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
Figure 5.
PRODUCT
4
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
MECHANICAL DATA
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
SOT-93
4,90
4,70
ø
15,2
14,7
4,1
4,0
1,37
1,17
3,95
4,15
E
T
E
L
O
S
B
O
16,2 MAX.
12,2 MAX.
31,0 TYP.
18,0 TYP.
1
1,30
1,10
2
3
11,1
10,8
0,78
0,50
2,50 TYP.
ALL LINEAR DIMENSIONS IN MILLIMETERS
MDXXAW
NOTE A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
5
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
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