BDX33, BDX33A, BDX33B, BDX33C, BDX33D

BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDX34, BDX34A, BDX34B, BDX34C and
BDX34D
●
70 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 3 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDX33A
E
T
E
L
O
S
B
O
BDX33B
V CBO
80
100
BDX33D
120
BDX33
45
BDX33B
V CEO
BDX33C
BDX33D
Emitter-base voltage
60
BDX33C
BDX33A
Collector-emitter voltage (IB = 0)
UNIT
45
BDX33
Collector-base voltage (IE = 0)
VALUE
V
60
80
V
100
120
VEBO
5
IC
10
A
IB
0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
70
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Continuous collector current
Continuous base current
Operating free air temperature range
Storage temperature range
Operating free-air temperature range
V
TJ
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(on)
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 100 mA
VEC
(see Note 3)
45
BDX33A
60
BDX33B
80
BDX33C
100
BDX33D
120
TYP
MAX
IB = 0
BDX33
0.5
VCE = 30 V
IB = 0
BDX33A
0.5
VCE = 40 V
IB = 0
BDX33B
0.5
VCE = 50 V
IB = 0
BDX33C
0.5
Collector-emitter
VCE = 60 V
IB = 0
BDX33D
0.5
cut-off current
VCE = 30 V
IB = 0
TC = 100°C
BDX33
10
VCE = 30 V
IB = 0
TC = 100°C
BDX33A
10
VCE = 40 V
IB = 0
TC = 100°C
BDX33B
10
VCE = 50 V
IB = 0
TC = 100°C
BDX33C
10
VCE = 60 V
IB = 0
TC = 100°C
BDX33D
10
VCB = 45 V
IE = 0
BDX33
1
VCB = 60 V
IE = 0
BDX33A
1
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
E
T
E
L
O
S
B
O
VCB = 80 V
IE = 0
BDX33B
1
VCB = 100 V
IE = 0
BDX33C
1
VCB = 120 V
IE = 0
BDX33D
1
VCB = 45 V
IE = 0
TC = 100°C
BDX33
5
VCB = 60 V
IE = 0
TC = 100°C
BDX33A
5
VCB = 80 V
IE = 0
TC = 100°C
BDX33B
5
VCB = 100 V
IE = 0
TC = 100°C
BDX33C
5
VCB = 120 V
IE = 0
TC = 100°C
BDX33D
5
VEB =
5V
IC = 0
VCE =
3V
IC = 4 A
BDX33
750
VCE =
3V
IC = 4 A
BDX33A
750
VCE =
3V
IC = 3 A
BDX33B
750
VCE =
3V
IC = 3 A
BDX33C
750
VCE =
3V
IC = 3 A
BDX33D
750
VCE =
3V
IC = 4 A
BDX33
2.5
VCE =
3V
IC = 4 A
BDX33A
2.5
VCE =
3V
IC = 3 A
BDX33B
2.5
VCE =
3V
IC = 3 A
BDX33C
2.5
Collector-emitter
saturation voltage
Parallel diode
forward voltage
(see Notes 3 and 4)
(see Notes 3 and 4)
10
3V
IC = 3 A
BDX33D
2.5
IB =
8 mA
IC = 4 A
BDX33
2.5
IB =
8 mA
IC = 4 A
BDX33A
2.5
IB =
6 mA
IC = 3 A
BDX33B
2.5
IB =
6 mA
IC = 3 A
BDX33C
2.5
IB =
6 mA
IC = 3 A
BDX33D
2.5
IE =
8A
(see Notes 3 and 4)
IB = 0
UNIT
V
VCE = 30 V
VCE =
VCE(sat)
IB = 0
MIN
BDX33
4
mA
mA
mA
V
V
V
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.78
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
TYP
ton
Turn-on time
IC = 3 A
IB(on) = 12 mA
IB(off) = -12 mA
1
µs
toff
Turn-off time
VBE(off) = -3.5 V
RL = 10 Ω
tp = 20 µs, dc ≤ 2%
5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
E
T
E
L
O
S
B
O
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS130AF
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
1·5
1·0
E
T
E
L
O
S
B
O
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS130AH
2·0
10
0·5
0·5
IC - Collector Current - A
1·0
TC = -40°C
TC = 25°C
TC = 100°C
10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AJ
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
10
IC - Collector Current - A
Figure 3.
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDX33, BDX33A, BDX33B, BDX33C, BDX33D
NPN SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AB
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
E
T
E
L
O
S
B
O
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
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