BDX53, BDX53A, BDX53B, BDX53C

BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDX54, BDX54A, BDX54B and BDX54C
●
60 W at 25°C Case Temperature
●
8 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 3 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDX53
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BDX53A
V CBO
80
BDX53C
100
45
BDX53B
V CEO
BDX53C
Emitter-base voltage
60
BDX53
BDX53A
UNIT
45
E
T
E
L
O
S
B
O
BDX53B
VALUE
60
80
V
V
100
VEBO
5
IC
8
A
IB
0.2
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
60
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Continuous collector current
Continuous base current
Operating junction temperature range
Operating temperature range
Operating free-air temperature range
V
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(sat)
VCE(sat)
VEC
Collector-emitter
TEST CONDITIONS
MIN
BDX53
45
BDX53A
60
BDX53B
80
BDX53C
100
TYP
MAX
V
IC = 100 mA
IB = 0
VCE = 30 V
IB = 0
BDX53
0.5
Collector-emitter
VCE = 30 V
IB = 0
BDX53A
0.5
cut-off current
VCE = 40 V
IB = 0
BDX53B
0.5
breakdown voltage
(see Note 3)
VCE = 50 V
IB = 0
BDX53C
0.5
VCB = 45 V
IE = 0
BDX53
0.2
Collector cut-off
VCB = 60 V
IE = 0
BDX53A
0.2
current
VCB = 80 V
IE = 0
BDX53B
0.2
VCB = 100 V
IE = 0
BDX53C
0.2
VEB =
5V
IC = 0
VCE =
3V
IC = 3 A
(see Notes 3 and 4)
IB =
12 mA
IC = 3 A
IB =
12 mA
IC = 3 A
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
saturation voltage
Collector-emitter
saturation voltage
Parallel diode
forward voltage
3A
mA
mA
2
mA
(see Notes 3 and 4)
2.5
V
(see Notes 3 and 4)
2
V
2.5
V
750
E
T
E
L
O
S
B
O
IE =
UNIT
IB = 0
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
2.08
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 3 A
IB(on) = 12 mA
IB(off) = -12 mA
1
µs
toff
Turn-off time
VBE(off) = -4.5 V
RL = 10 Ω
tp = 20 µs, dc ≤ 2%
5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS120AG
40000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
2·5
2·0
1·5
1·0
E
T
E
L
O
S
B
O
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS120AH
3·0
10
0·5
0
0·5
IC - Collector Current - A
1·0
TC = -40°C
TC = 25°C
TC = 100°C
10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS120AI
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
10
IC - Collector Current - A
Figure 3.
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDX53, BDX53A, BDX53B, BDX53C
NPN SILICON POWER DARLINGTONS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
100
SAS120AD
IC - Collector Current - A
DC Operation
tp = 300 µs,
d = 0.1 = 10%
10
1·0
BDX53
BDX53A
BDX53B
BDX53C
E
T
E
L
O
S
B
O
0·1
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS120AB
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
MAY 1989 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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