BU406, BU407

BU406, BU407
NPN SILICON POWER TRANSISTORS
7 A Continuous Collector Current
15 A Peak Collector Current
TO-220 PACKAGE
(TOP VIEW)
60 W at 25°C Case Temperature
This series is obsolete and
not recommended for new designs.
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-base voltage (IE = 0)
BU406
Emitter-base voltage
Continuous collector current
BU407
V CBO
E
T
E
L
O
S
B
O
Collector-emitter voltage (VBE = -2 V)
Collector-emitter voltage (IB = 0)
SYMBOL
BU406
BU407
BU406
BU407
VCEX
V CEO
VEB
IC
VALUE
400
330
400
330
200
150
UNIT
V
V
V
6
V
7
A
Peak collector current (see Note 1)
ICM
15
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
60
W
Storage temperature range
Tstg
Continuous base current
Operating junction temperature range
NOTE
IB
Tj
4
-55 to +150
-55 to +150
A
°C
°C
1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BU406, BU407
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICES
IEBO
hFE
V CE(sat)
VBE(sat)
ft
Cob
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC =
30 mA
MIN
IB = 0
TYP
MAX
140
V
5
VCE = 400 V
VBE = 0
BU406
VCE = 330 V
VBE = 0
BU407
5
Collector-emitter
VCE = 250 V
VBE = 0
BU406
0.1
cut-off current
VCE = 200 V
VBE = 0
BU407
0.1
VCE = 250 V
VBE = 0
TC = 150°C
BU406
1
VCE = 200 V
VBE = 0
TC = 150°C
BU407
1
VEB =
6V
IC = 0
Forward current
VCE =
10 V
IC =
transfer ratio
VCE =
10 V
IC = 0.5 A
IB =
0.5 A
IC =
5A
IB =
0.5 A
IC =
5A
Emitter cut-off
current
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
VCE =
5V
VCB =
20 V
4A
UNIT
mA
1
mA
(see Notes 2 and 3)
1
V
(see Notes 2 and 3)
1.2
V
(see Notes 2 and 3)
IC = 0.5 A
f = 1 MHz
IE = 0
f = 1 MHz
12
20
(see Note 4)
E
T
E
L
O
S
B
O
6
MHz
60
pF
NOTES: 2. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
3. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
4. To obtain ft the [hFE] response is extrapolated at the rate of -6 dB per octave from f = 1 MHz to the frequency at which [hFE] = 1.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
2.08
°C/W
70
°C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
†
ts
Storage time
t(off)
Turn off time
TEST CONDITIONS
IC = 5 A
IB(end) = 0.5A
†
MIN
(see Figures 1 and 2)
MAX
UNIT
750
ns
2.7
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BU406, BU407
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
V BB+
V cc = 24V
5.6 Ω
47 Ω
SET
IB
22 Ω
TIP32
100 Ω
+4V
7.5 Ω
240 µH
100 Ω
TIP32
BY205
Current
Probes
50 Ω
5 pF
INPUT
0
1 kΩ
2N5337
14.8 µH
TUT
OUTPUT
BY205
2N6191
TIP31
TIP31
E
T
E
L
O
S
B
O
TIP31
22 Ω
V BB-
22 Ω
Figure 1. Inductive-Load Switching Test Circuit
64 µs
42 µs
IB
I
B(end)
50%
0
t
s
IC
0.1 A
0
t off
toff is the time for the collector
current IC to decrease to 0.1 A
after the collector to emitter
Vfly
voltage V CE has risen 3 V into
V
CE
its flyback excursion.
0
3V
Figure 2. Inductive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BU406, BU407
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
TCD124AA
70
TCD124AB
50
TC = 25°C
tp < 300 µs
d < 2%
tp < 300 µs
d < 2%
VCE = 5 V
TC = 100°C
hFE - Typical DC Current Gain
hFE - Typical DC Current Gain
60
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
50
40
TC = 25°C
30
20
40
30
20
10
10
0
0·1
TC = -55°C
VCE = 1 V
VCE = 5 V
VCE = 10 V
E
T
E
L
O
S
B
O
1·0
0
0·1
10
IC - Collector Current - A
1·0
10
IC - Collector Current - A
Figure 3.
Figure 4.
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
CASE TEMPERATURE
TCD124AC
0·8
tp < 300 µs
d < 2%
0·7
0·6
IC = 8 A
IB = 2 A
0·5
0·4
0·3
IC = 4 A
IB = 0.5 A
0·2
0·1
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TC - Case Temperature - °C
Figure 5.
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BU406, BU407
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAD124AA
1·0
0·1
E
T
E
L
O
S
B
O
BU407
BU406
0.01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
Similar pages