BUL791C Series

BUL791
NPN SILICON POWER TRANSISTOR
●
Designed Specifically for High Frequency
Electronic Ballasts up to 125 W
●
hFE 6 to 22 at VCE = 1 V, IC = 2 A
●
Low Power Losses (On-state and Switching)
●
Key Parameters Characterised at High
Temperature
●
Tight and Reproducible Parametric
Distributions
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C ambient temperature (unless otherwise noted )
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (VBE = 0)
VCES
700
V
Collector-base voltage (IE = 0)
VCBO
700
V
VCEO
400
V
VEBO
9
V
Collector-emitter voltage (IB = 0)
Emitter-base voltage
Continuous collector current
E
T
E
L
O
S
B
O
IC
4
A
Peak collector current (see Note 1)
ICM
8
A
Peak collector current (see Note 2)
ICM
14
A
IB
2.5
A
Continuous base current
Peak base current (see Note 2)
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
IBM
3.5
A
Ptot
75
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%.
2. This value applies for tp = 300 µs, duty cycle ≤ 2%.
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BUL791
NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
IEBO
VBE(sat)
VCE(sat)
hFE
VFCB
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC = 100 mA
L = 25 mH
Collector-emitter
VCE = 700 V
V BE = 0
cut-off current
V CE = 700 V
V BE = 0
VEB =
IC = 0
Emitter cut-off
current
9V
MIN
(see Note 3)
TYP
MAX
400
V
10
TC = 90°C
200
1
Base-emitter
IB = 400 mA
IC =
2A
(see Notes 4 and 5)
0.94
saturation voltage
IB = 400 mA
IC =
2A
TC = 90°C
0.86
Collector-emitter
IB = 400 mA
IC =
2A
(see Notes 4 and 5)
0.25
saturation voltage
IB = 400 mA
IC =
2A
TC = 90°C
0.3
VCE =
1V
IC = 10 mA
10
VCE =
1V
IC =
2A
6
12
22
VCE =
5V
IC =
8A
2
6.5
14
Forward current
transfer ratio
Collector-base forward
bias diode voltage
ICB = 60 mA
UNIT
1
0.4
µA
mA
V
V
16.5
850
mV
NOTES: 3. Inductive loop switching measurement.
4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 3.2 mm from the device body.
thermal characteristics
E
T
E
L
O
S
B
O
MAX
UNIT
R θJA
Junction to free air thermal resistance
PARAMETER
MIN
TYP
62.5
°C/W
R θJC
Junction to case thermal resistance
1.66
°C/W
MAX
UNIT
2.2
3
µs
95
180
ns
210
300
ns
4
6
µs
120
230
ns
inductive-load switching characteristics at 25°C case temperature
PARAMETER
tsv
Storage time
tfi
Current fall time
txo
Cross over time
tsv
Storage time
tfi
Current fall time
TEST CONDITIONS
MIN
IC = 2 A
IB(on) = 400 mA
VCC = 40 V
L = 1 mH
IB(off) = 800 mA
VCLAMP = 300 V
IC = 2 A
IB(on) = 400 mA
VCC = 40 V
L = 1 mH
IB(off) = 250 mA
VCLAMP = 300 V
TYP
resistive-load switching characteristics at 25°C case temperature
TYP
MAX
UNIT
tsv
PARAMETER
Storage time
IC = 2 A
IB(on) = 400 mA
TEST CONDITIONS
MIN
2.2
3
µs
tfi
Current fall time
VCC = 300 V
IB(off) = 400 mA
160
250
ns
2
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUL791
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
L791CHF
VCE(sat) - Collector-Emitter Saturation Voltage - V
30
TC = 25°C
hFE - Forward Current Transfer Ratio
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
10
VCE = 1 V
V CE = 5 V
1·0
0·01
0·1
L791CVB
10
IB = I C / 5
TC = 25°C
TC = 90°C
1·0
0·1
E
T
E
L
O
S
B
O
1·0
10
0·01
0·1
20
1·0
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
IB(on) = IC / 5
IB(off) = IC / 2.5
= 40 V
VCC
VCLAMP = 300 V
L
= 1 mH
TC
= 25°C
tsv
txo
tfi
10
Inductive Switching Time - µs
Inductive Switching Time - µs
1·0
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
L791CI1
10
10
0·1
L791CI3
IB(on) = 400 mA, VCC
= 40 V, L = 1 mH
IB(off) = 800 mA, VCLAMP = 300 V, IC = 2 A
1·0
0·1
t sv
t fi
0·01
0·1
0·01
1·0
IC - Collector Current - A
Figure 3.
10
0
20
40
60
80
100
TC - Case Temperature - °C
Figure 4.
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BUL791
NPN SILICON POWER TRANSISTOR
TYPICAL CHARACTERISTICS
INDUCTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
L791CI2
10
L791CI4
10
IB(on) = 400 mA, VCC
= 40 V, L = 1 mH
IB(off) = 250 mA, VCLAMP = 300 V, IC = 2 A
tsv
tfi
IB(on) = IC / 5
IB(off) = IC / 8
= 40 V
VCC
VCLAMP = 300 V
L
= 1 mH
= 25°C
TC
Inductive Switching Time - µs
Inductive Switching Time - µs
INDUCTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
1·0
1·0
E
T
E
L
O
S
B
O
t sv
t fi
0·1
0·1
0·1
1·0
10
0
20
IC - Collector Current - A
L791CR1
IB(on) = 400 mA, VCC = 300 V
IB(off) = 400 mA, IC = 2 A
= IC / 5, VCC = 300 V
= IC / 5, TC = 25°C
Resistive Switching Time - µs
Resistive Switching Time - µs
L791CR2
10
1·0
tsv
tfi
t sv
t fi
0·1
1·0
IC - Collector Current - A
Figure 7.
10
0
20
40
60
80
100
TC - Case Temperature - °C
Figure 8.
4
100
RESISTIVE SWITCHING TIMES
vs
CASE TEMPERATURE
1·0
0·1
0·1
80
Figure 6.
RESISTIVE SWITCHING TIMES
vs
COLLECTOR CURRENT
IB(on)
IB(off)
60
TC - Case Temperature - °C
Figure 5.
10
40
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUL791
NPN SILICON POWER TRANSISTOR
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
L791CFB
L791CRB
10
IB(on) = IC / 5
VBE(off) = -5 V
= 25°C
TC
IC - Collector Current - A
IC - Collector Current - A
8
1·0
0·1
TC = 25°C
tp = 10 µs
tp = 100 µs
tp = 1 ms
tp = 10 ms
DC Operation
0·01
1·0
6
4
2
E
T
E
L
O
S
B
O
0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 9.
0
100
200
300
400
500
600
700
800
VCE - Collector-Emitter Voltage - V
Figure 10.
JULY 1991 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
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