BUV47, BUV47A

BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
●
Rugged Triple-Diffused Planar Construction
●
9 A Continuous Collector Current
●
1000 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (VBE = -2.5 V)
Collector-emitter voltage (RBE = 10 Ω)
Collector-emitter voltage (IB = 0)
Continuous collector current
Peak base current
Continuous device dissipation at (or below) 25°C case temperature
Operating junction temperature range
Storage temperature range
NOTE
BUV47
BUV47A
BUV47
VCEX
VCER
E
T
E
L
O
S
B
O
Peak collector current (see Note 1)
Continuous base current
SYMBOL
BUV47A
BUV47
BUV47A
VCEO
VALUE
850
1000
850
1000
400
450
UNIT
V
V
V
IC
9
ICM
15
A
IB
3
A
A
IBM
6
A
Ptot
120
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
1: This value applies for tp ≤ 5 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
V(BR)EBO
ICES
ICER
IEBO
VCE(sat)
VBE(sat)
ft
Cob
Collector-emitter
sustaining voltage
Base-emitter
breakdown voltage
TEST CONDITIONS
MIN
IC = 200 mA
L = 25 mH
(see Note 2)
IE =
IC = 0
(see Note 3)
50 mA
BUV47
400
BUV47A
450
TYP
MAX
V
7
30
VCE = 850 V
VBE = 0
BUV47
0.15
Collector-emitter
VCE = 1000 V
VBE = 0
BUV47A
0.15
cut-off current
VCE = 850 V
VBE = 0
TC = 125°C
BUV47
1.5
TC = 125°C
BUV47A
1.5
BUV47
0.4
VCE = 1000 V
VBE = 0
VCE = 850 V
RBE = 10 Ω
Collector-emitter
VCE = 1000 V
RBE = 10 Ω
BUV47A
0.4
cut-off current
VCE = 850 V
RBE = 10 Ω
TC = 125°C
BUV47
3.0
VCE = 1000 V
RBE = 10 Ω
TC = 125°C
BUV47A
3.0
VEB =
5V
IC = 0
Emitter cut-off
current
1
Collector-emitter
IB =
1A
IC =
5A
saturation voltage
IB =
2.5 A
IC =
8A
IB =
1A
IC =
5A
VCE =
10 V
IC =
0.5 A
VCB =
20 V
IC = 0
Base-emitter
saturation voltage
Current gain
bandwidth product
Output capacitance
1.5
(see Notes 3 and 4)
3.0
(see Notes 3 and 4)
E
T
E
L
O
S
B
O
f=
1 MHz
f = 0.1 MHz
UNIT
1.6
V
mA
mA
mA
V
V
8
MHz
105
pF
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
ton
Turn on time
ts
Storage time
tf
Fall time
TEST CONDITIONS
†
IC = 5 A
IB(on) = 1 A
VCC = 150 V
(see Figures 1 and 2)
MIN
TYP
IB(off) = -1 A
1.0
µs
3.0
µs
0.8
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
†
tsv
Voltage storage time
IC = 5 A
IB(on) = 1 A
tfi
Current fall time
TC = 100°C
(see Figures 3 and 4)
MIN
VBE(off) = -5 V
2
TYP
MAX
UNIT
4.0
µs
0.4
µs
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µF
120 Ω
T
V1
100 Ω
100 µF
47 Ω
tp
V cc V=CC250 V
TUT
15 Ω
V1
100 Ω
680 µF
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
E
T
E
L
O
S
B
O
C
90%
90%
E
IC
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = t off
B
10%
10%
90%
D
F
0%
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
180 µH
V Gen
1 kΩ
68 Ω
0.02 µF
vcc
2N2222
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
E
T
E
L
O
S
B
O
270 Ω
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 3. Inductive-Load Switching Test Circuit
I B(on)
A (90%)
IB
A - B = tsv
B - C = trv
D - E = tfi
E - F = tti
Base Current
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF.
B. Resistors must be noninductive types.
Figure 4. Inductive-Load Switching Waveforms
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP762AA
100
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
TCP762AB
5·0
TC = 25°C
IC = 8 A
IC = 6 A
IC = 4 A
IC = 2 A
4·0
3·0
2·0
1·0
E
T
E
L
O
S
B
O
1·0
0·1
0
1·0
10
0
0·5
1·0
IC - Collector Current - A
0·3
0·2
0·1
0
0·5
1·0
1·5
2·0
IB - Base Current - A
Figure 7.
2·5
TCP762AC
10
ICES - Collector Cut-off Current - µA
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP762AK
TC = 100°C
IC = 8 A
IC = 6 A
IC = 4 A
IC = 2 A
0
2·5
Figure 6.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
0·4
2·0
IB - Base Current - A
Figure 5.
0·5
1·5
1·0
BUV47A
VCE = 1000 V
0·1
BUV47
VCE = 850 V
0·01
0·001
-80 -60 -40 -20
0
20
40
60
80 100 120 140
TC - Case Temperature - °C
Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
BUV47, BUV47A
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAP762AA
10
1·0
0.1
tp = 100 µs
1 ms
tp =
tp = 10 ms
DC Operation
E
T
E
L
O
S
B
O
0·01
1·0
BUV47
BUV47A
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 9.
ZθJC / RθJC - Normalised Transient Thermal Impedance
THERMAL INFORMATION
THERMAL RESPONSE JUNCTION TO CASE
vs
POWER PULSE DURATION
TCP762AD
1·0
50%
20%
0·1
10%
5%
2%
1%
0·01
0%
0·001
10-5
t1
duty cycle = t1/t2
Read time at end of t1,
TJ(max) - TC = PD(peak) ·
10-4
10-3
t2
( )
ZθJC
RθJC
10-2
· R θJC(max)
10-1
t1 - Power Pulse Duration -s
Figure 10.
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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