TIC126 Series

TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
12 A Continuous On-State Current
100 A Surge-Current
TO-220 PACKAGE
(TOP VIEW)
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
K
1
Max IGT of 20 mA
A
2
G
3
This series is obsolete and
not recommended for new designs.
Pin 2 is in electrical contact with the mounting base.
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
Repetitive peak off-state voltage
TIC126D
TIC126M
TIC126S
SYMBOL
VDRM
E
T
E
L
O
S
B
O
TIC126N
TIC126D
Repetitive peak reverse voltage
Continuous on-state current at (or below) 70°C case temperature (see Note 1)
TIC126M
TIC126S
TIC126N
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3)
Peak positive gate current (pulse width ≤ 300 µs)
Peak gate power dissipation (pulse width ≤ 300 µs)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
VRRM
IT(RMS)
VALUE
400
600
700
MDC1ACA
UNIT
V
800
400
600
700
800
V
12
A
IT(AV)
7.5
A
ITM
100
A
PGM
5
W
TC
-40 to +110
°C
TL
230
°C
IGM
PG(AV)
Tstg
3
1
-40 to +125
A
W
°C
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse volta ge
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
IDRM
IRRM
IGT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
TEST CONDITIONS
VD = rated VDRM
MIN
MAX
UNIT
TC = 110°C
2
mA
2
mA
20
mA
VR = rated VRRM
IG = 0
TC = 110°C
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
VAA = 12 V
RL = 100 Ω
TC = - 40°C
TYP
8
2.5
tp(g) ≥ 20 µs
VGT
Gate trigger voltage
VAA = 12 V
RL = 100 Ω
0.8
tp(g) ≥ 20 µs
VAA = 12 V
RL = 100 Ω
TC = 110°C
tp(g) ≥ 20 µs
VAA = 12 V
IH
Holding current
dv/dt
NOTE
On-state voltage
Critical rate of rise of
off-state voltage
TC = - 40°C
100
Initiating IT = 100 mA
mA
VAA = 12 V
40
IT = 12 A
(see Note 5)
VD = rated VD
IG = 0
1.4
TC = 110°C
E
T
E
L
O
S
B
O
400
V
V/µs
5: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
RθJC
Junction to case thermal resistance
RθJA
Junction to free air thermal resistance
MIN
2
V
0.2
Initiating IT = 100 mA
VT
1.5
TYP
MAX
UNIT
2.4
°C/W
62.5
°C/W
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
THERMAL INFORMATION
MAX ANODE POWER LOSS
vs
ON-STATE CURRENT
AVERAGE ON-STATE CURRENT
DERATING CURVE
TI03AE
PA - Max Continuous Anode Power Dissipated - W
IT(AV) - Maximum Average On-State Current - A
16
14
Continuous DC
12
10
Φ = 180º
8
6
4
0°
180°
Φ
Conduction
2
Angle
0
30
40
50
60
TI03AF
100
TJ = 110°C
10
1
E
T
E
L
O
S
B
O
70
80
90
100
0·1
0·1
110
TC - Case Temperature - °C
10
100
IT - Continuous On-State Current - A
Figure 1.
Figure 2.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
TI03AG
10
RθJC(t) - Transient Thermal Resistance - °C/W
100
ITM - Peak Half-Sine-Wave Current - A
1
10
TC ≤ 70°C
No Prior Device Conduction
Gate Control Guaranteed
1
TI03AH
1
0.1
1
10
100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 3.
1
10
100
Consecutive 50 Hz Half-Sine-Wave Cycles
Figure 4.
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
TIC126 SERIES
SILICON CONTROLLED RECTIFIERS
TYPICAL CHARACTERISTICS
GATE TRIGGER VOLTAGE
vs
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
CASE TEMPERATURE
TC03AA
TC03AB
1
VGT - Gate Trigger Voltage - V
IGT - Gate Trigger Current - mA
VAA = 12 V
RL = 100 Ω
tp(g) ≥ 20 µs
10
0·8
0·6
0·4
VAA =12 V
RL = 100 Ω
E
T
E
L
O
S
B
O
0·2
1
-50
-25
0
25
50
75
100
tp(g) ≥ 20 µs
0
-50
125
-25
0
25
Figure 5.
100
125
Figure 6.
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
HOLDING CURRENT
vs
CASE TEMPERATURE
TC03AD
VTM - Peak On-State Voltage - V
Initiating IT = 100 mA
10
TC03AH
2·5
TC = 25 °C
tp = 300 µs
VAA = 12 V
IH - Holding Current - mA
75
TC - Case Temperature - °C
TC - Case Temperature - °C
100
50
Duty Cycle ≤ 2 %
2
1·5
1
0·5
1
-50
-25
0
25
50
75
TC - Case Temperature - °C
Figure 7.
100
125
0
0·1
1
10
Figure 8.
4
100
ITM - Peak On-State Current - A
APRIL 1971 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.