TICC107M

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TICC107M
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SILICON CONTROLLED RECTIFIER
TICC107M Silicon Controlled Rectifier
1 A RMS On-State Current
Glass Passivated Wafer
600 V Off-State Voltage
IGT 50 µA min, 200 µA max.
SOT-223 Package (Top View)
Description
The TICC107M is a sensitive gate SCR designed for switching
loads up to 1 Amp RMS. With a maximum gate trigger current of
200 µA the TICC107M can be controlled from very simple logic
circuits and analog driver circuits. Applications for this device
include capacitive discharge flash guns, ignitors and standby
power supplies.
(Cathode) K
1
(Anode)
A
2
(Gate)
G
3
A (Anode)
4
MD-SOT223-001-a
Device Symbol
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A
G
SD8XAA
K
How to Order
Device
Package
TICC107M
SOT-223
Carrier
Order As
Marking Code
Standard Quantity
Embossed Tape Reeled
TICC107MR-S
107M
2500
Absolute Maximum Ratings over Operating Junction Temperature (Unless Otherwise Noted)
Symbol
Value
Unit
Repetitive peak off-state voltage (see Note 1)
Rating
VDRM
600
V
Repetitive peak reverse voltage
VRRM
600
V
RMS on-state current at (or below) 55 °C ambient temperature, 180 ° conduction angle (see Note 2)
IT(RMS)
1
A
Non-repetitive peak on-state current at (or below) 25 °C ambient temperature (see Note 3)
ITSM
22.5
A
Critical rate of rise of on-state current at 110 °C (see Note 4)
di/dt
100
A/µs
Peak positive gate current (pulse width ≤ 300 µs)
IGM
0.2
A
Junction temperature
TJ
-40 to +110
°C
Tstg
-40 to +125
°C
Storage temperature range
NOTES: 1.
2.
3.
4.
This value applies when the gate-cathode resistance R GK = 1 kΩ.
Device mounted to achieve a junction to ambient thermal resistance of 70 °C/W.
This value applies for one 50 Hz half-sine-wave. The surge may be repeated when the device returns to its initial conditions .
Rate of rise of on-state current after triggering with IG = 10 mA, diG/dt = 1 A/µs .
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
APRIL 2005 — REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
1
TICC107M Silicon Controlled Rectifier
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter
Test Conditions
Typ
Max
Unit
Repetitive peak off-state current
VD = VDRM, RGK = 1 kΩ
20
µA
IRRM
Repetitive peak reverse current
VR = VRRM, IG = 0
200
µA
µA
IGT
Gate trigger current
VAA = 12 V, RL = 100 Ω, tp(g) ≥ 20 µs
50
200
VGT
Gate trigger voltage
VAA = 12 V, RL = 100 Ω, tp(g) ≥ 20 µs
0.4
1
V
IH
Holding current
VAA = 12 V, Initiating IT = 10 mA
2
mA
On-state voltage
IT = 2 A (see Note 5)
1.4
V
VT
NOTE:
5. This parameter must be measured using pulse techniques, tp = 1 ms, duty cycle ≤ 2 %, with voltage sensing-contacts separate from
the current carrying contacts.
Thermal Characteristics
E
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Parameter
RθJA
NOTE
2
Min
IDRM
Min
Junction to ambient thermal resistance (see Note 6)
Typ
70
Max
Unit
°C/W
6. FR4 test board (single-sided), 1.6mm thickness. Terminal 4 (tab) connected to copper of area 5 cm2, thickness 35 µm. Test board
mounted vertically.
APRIL 2005 — REVISED JANUARY 2007
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Bourns Sales Offices
Region
Phone
Fax
The Americas:
Europe:
Asia-Pacific:
+1-951-781-5500
+41-41-7685555
+886-2-25624117
+1-951-781-5700
+41-41-7685510
+886-2-25624116
Phone
Fax
+1-951-781-5500
+41-41-7685555
+886-2-25624117
+1-951-781-5700
+41-41-7685510
+886-2-25624116
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Technical Assistance
Region
The Americas:
Europe:
Asia-Pacific:
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