TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the TIP29 Series TO-220 PACKAGE (TOP VIEW) 30 W at 25°C Case Temperature 1 A Continuous Collector Current 3 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available E 3 This series is obsolete and not recommended for new designs. Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP30 Collector-base voltage (IE = 0) TIP30A V CBO TIP30C TIP30 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current TIP30A TIP30B TIP30C VCEO VEBO IC Peak collector current (see Note 1) ICM Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot Continuous base current Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. UNIT -80 E T E L O S B O TIP30B VALUE -100 -140 -40 -60 -100 -5 V -1 A -3 -0.4 Ptot 2 A A 30 W 32 mJ Tj -65 to +150 TL 250 Tstg V -80 IB ½LIC2 V -120 -65 to +150 W °C °C °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.24 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = -20 V. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 5) TIP30 -40 TIP30A -60 TIP30B -80 TIP30C -100 TYP MAX UNIT V VCE = -80 V VBE = 0 TIP30 -0.2 Collector-emitter VCE = -100 V VBE = 0 TIP30A -0.2 cut-off current VCE = -120 V VBE = 0 TIP30B -0.2 VCE = -140 V VBE = 0 TIP30C -0.2 Collector cut-off VCE = -30 V IB = 0 TIP30/30A -0.3 current VCE = -60 V IB = 0 TIP30B/30C -0.3 VEB = -5 V IC = 0 Forward current VCE = -4 V IC = -0.2 A transfer ratio VCE = -4 V IC = -1 A IB = -125 mA IC = - 1A (see Notes 5 and 6) -0.7 V VCE = IC = -1 A (see Notes 5 and 6) -1.3 V Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio -4 V -1 (see Notes 5 and 6) mA mA mA 40 15 E T E L O S B O VCE = -10 V IC = -0.2 A f = 1 kHz 20 VCE = -10 V IC = -0.2 A f = 1 MHz 3 75 NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 4.17 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -1 A IB(on) = -0.1 A IB(off) = 0.1 A toff Turn-off time VBE(off) = 4.3 V RL = 30 Ω tp = 20 µs, dc ≤ 2% 0.3 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS632AD VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1 -0·001 -0·01 TCS632AE -10 VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT IC = -100 mA IC = -300 mA IC = -1 A -1·0 -0·1 E T E L O S B O -0·1 -1·0 -0·01 -0·1 IC - Collector Current - A -1·0 -10 -100 -1000 IB - Base Current - mA Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·0 TCS632AF VBE - Base-Emitter Voltage - V VCE = -4 V TC = 25°C -0·9 -0·8 -0·7 -0·6 -0·5 -0·01 -0·1 -1·0 IC - Collector Current - A Figure 3. JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP30, TIP30A,TIP30B, TIP30C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS632AB tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 TIP30 TIP30A TIP30B TIP30C E T E L O S B O -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS631AB Ptot - Maximum Power Dissipation - W 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.