TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS 40 W at 25°C Case Temperature 1 A Continuous Collector Current TO-220 PACKAGE (TOP VIEW) 2 A Peak Collector Current 20 mJ Reverse-Energy Rating This series is obsolete and not recommended for new designs. B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL TIP47 Collector-base voltage (IE = 0) TIP48 V CBO TIP50 TIP47 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current TIP48 TIP49 TIP50 VCEO VEBO IC Peak collector current (see Note 1) ICM Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot Continuous base current Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTE 1: 2. 3. 4. UNIT 350 E T E L O S B O TIP49 VALUE 400 450 500 250 300 350 400 5 1 2 IB 0.6 Ptot 2 ½LIC2 V V A A A 40 W 20 mJ Tj -65 to +150 TL 260 Tstg V -65 to +150 W °C °C °C This value applies for tp ≤ 1 ms, duty cycle ≤ 2%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, V BE(off) = 0, RS = 0.1 Ω, VCC = 20 V. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE VCE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 5) TIP47 250 TIP48 300 TIP49 350 TIP50 400 TYP MAX UNIT V VCE = 350 V VBE = 0 TIP47 1 Collector-emitter VCE = 400 V VBE = 0 TIP48 1 cut-off current VCE = 450 V VBE = 0 TIP49 1 mA VCE = 500 V VBE = 0 TIP50 1 VCE = 150 V IB = 0 TIP47 1 Collector cut-off VCE = 200 V IB = 0 TIP48 1 current VCE = 250 V IB = 0 TIP49 1 VCE = 300 V IB = 0 TIP50 1 VEB = 5V IC = 0 Forward current VCE = 10 V IC = 0.3 A transfer ratio VCE = 10 V IC = 1A IB = 0.2 A IC = 1A (see Notes 5 and 6) 1 V VCE = 10 V IC = 1A (see Notes 5 and 6) 1.5 V VCE = 10 V IC = 0.2 A f = 1 kHz 25 VCE = 10 V IC = 0.2 A f = 2 MHz 5 MAX UNIT Emitter cut-off current Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 1 (see Notes 5 and 6) 30 mA mA 150 10 E T E L O S B O NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. resistive-load-switching characteristics at 25°C case temperature PARAMETER † ton Turn on time toff Turn off time TEST CONDITIONS † MIN IC = 1 A IB(on) = 0.1 A IB(off) = -0.1 A VBE(off) = -5 V RL = 200 Ω (see Figures 1 and 2) 0.2 µs 2 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µF 120 Ω T V1 100 Ω 100 µF 47 Ω tp V cc V=CC250 V TUT 15 Ω V1 100 Ω 680 µF 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit E T E L O S B O C 90% 90% E IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = t off B 10% 10% 90% D F 0% dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 40 TCP770AA VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - Typical DC Current Gain 50 COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VCE = 10 V TC = 25°C tp = 300 µs, duty cycle < 2% 30 20 10 0 0.01 0·3 TCP770AB IC / IB = 5 = 25°C TC tp = 300 µs, duty cycle < 2% 0·2 0·1 E T E L O S B O 0.1 0 0·01 1 IC - Collector Current - A 0·1 1 IC - Collector Current - A Figure 3. Figure 4. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT VBE(sat) - Base-Emitter Saturation Voltage - V 1.0 0.9 TCP770AC VCE = 10 V TC = 25°C tp = 300 µs, duty cycle < 2% 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0·01 0·1 1·0 IC - Collector Current - A Figure 5. 4 DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAP770AA 1·0 0.1 tp = 100 µs TIP47 TIP48 TIP49 TIP50 tp = 500 µs 1 ms tp = DC Operation E T E L O S B O 0·01 1·0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 6. DECEMBER 1971 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5